Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BYW29EB, BYW29ED series
Rectifier diodes
ultrafast, rugged
Product specification
November 1998
NXP Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
FEATURES
BYW29EB, BYW29ED series
SYMBOL
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
QUICK REFERENCE DATA
VR = 150 V/ 200 V
k
tab
VF ≤ 0.895 V
a
3
IF(AV) = 8 A
IRRM = 0.2 A
trr ≤ 25 ns
GENERAL DESCRIPTION
Ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies.
The BYW29EB series is supplied in the SOT404 surface mounting package.
The BYW29ED series is supplied in the SOT428 surface mounting package.
PINNING
PIN
SOT404
DESCRIPTION
1
no connection
2
cathode1
3
anode
tab
SOT428
tab
tab
2
1
cathode
2
1
3
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
BYW29EB/ BYW29ED
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
IRRM
IRSM
Tj
Tstg
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified forward
current
Repetitive peak forward
current
Non-repetitive peak forward
current
Peak repetitive reverse
surge current
Peak non-repetitive reverse
surge current
Operating junction
temperature
Storage temperature
MAX.
UNIT
-
-150
150
-200
200
V
-
150
200
V
-
150
200
V
square wave; δ = 0.5; Tmb ≤ 128 ˚C
-
8
A
square wave; δ = 0.5; Tmb ≤ 128 ˚C
-
16
A
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied VRRM(max)
tp = 2 µs; δ = 0.001
-
80
88
A
A
-
0.2
A
tp = 100 µs
-
0.2
A
-
150
˚C
- 40
150
˚C
1. It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.
November 1998
1
Rev 1.300
NXP Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYW29EB, BYW29ED series
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
VC
Electrostatic discharge
capacitor voltage
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
MAX.
UNIT
-
8
kV
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
MIN.
SOT404 and SOT428 packages, pcb
mounted, minimum footprint, FR4 board
TYP. MAX. UNIT
-
-
2.7
K/W
-
50
-
K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
VF
Forward voltage
IR
Reverse current
Qrr
trr1
trr2
Vfr
Reverse recovered charge
Reverse recovery time
Reverse recovery time
Forward recovery voltage
IF = 8 A; Tj = 150˚C
IF = 8 A
IF = 20 A
VR = VRWM
VR = VRWM; Tj = 100˚C
IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs
IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/µs
IF = 0.5 A to IR = 1 A; Irec = 0.25 A
IF = 1 A; dIF/dt = 10 A/µs
November 1998
MIN.
2
-
TYP. MAX. UNIT
0.8
0.92
1.1
2
0.2
4
20
15
1
0.895
1.05
1.3
10
0.6
11
25
20
-
V
V
V
µA
mA
nC
ns
ns
V
Rev 1.300
NXP Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
I
dI
F
BYW29EB, BYW29ED series
0.5A
F
dt
IF
t
0A
rr
time
Q
I
10%
s
I rec = 0.25A
IR
100%
trr2
I
R
rrm
I = 1A
R
Fig.1. Definition of trr1, Qs and Irrm
I
Fig.4. Definition of trr2
12
F
Tmb(max) / C
108
D = 1.0
BYW29
PF / W
Vo = 0.791 V
Rs = 0.013 Ohms
115
10
0.5
8
time
122
0.2
6
129
0.1
VF
4
tp
I
V
143
t
T
0
time
Fig.2. Definition of Vfr
0
2
4
6
IF(AV) / A
8
10
150
12
Fig.5. Maximum forward dissipation PF = f(IF(AV));
square current waveform where IF(AV) =IF(RMS) x √D.
R
8
PF / W
a = 1.57
Rs = 0.013 Ohms
132.5
4
4
to ’scope
129
2.8
5
Voltage Pulse Source
122
125.5
1.9
2.2
6
D.U.T.
Tmb(max) / C
BYW29
Vo = 0.791 V
7
136
3
139.5
2
143
1
146.5
0
0
1
2
3
4
IF(AV) / A
5
6
7
150
8
Fig.6. Maximum forward dissipation PF = f(IF(AV));
sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
Fig.3. Circuit schematic for trr2
November 1998
136
tp
T
2
fr
VF
Current
shunt
D=
3
Rev 1.300
NXP Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYW29EB, BYW29ED series
trr / ns
100 Qs / nC
1000
IF=10A
5A
2A
1A
IF=10A
100
10
IF=1A
10
1
1.0
1
10
dIF/dt (A/us)
100
1.0
Fig.7. Maximum trr at Tj = 25 ˚C.
100
Fig.10. Maximum Qs at Tj = 25 ˚C.
Irrm / A
10
10
-dIF/dt (A/us)
10
IF=10A
Transient thermal impedance, Zth j-mb (K/W)
1
1
IF=1A
0.1
0.1
PD
0.01
0.001
1us
0.01
10
-dIF/dt (A/us)
1
100
Fig.8. Maximum Irrm at Tj = 25 ˚C.
30
tp
D=
T
10us
tp
T
t
100us 1ms
10ms 100ms
1s
10s
pulse width, tp (s)
PBYL1025
Fig.11. Transient thermal impedance; Zth j-mb = f(tp).
BYW29
IF / A
Tj=150 C
Tj=25 C
20
typ
max
10
0
0
0.5
1
VF / V
1.5
2
Fig.9. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
November 1998
4
Rev 1.300
NXP Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYW29EB, BYW29ED series
MECHANICAL DATA
Dimensions in mm
4.5 max
1.4 max
10.3 max
Net Mass: 1.4 g
11 max
15.4
2.5
0.85 max
(x2)
0.5
2.54 (x2)
Fig.12. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.13. SOT404 : soldering pattern for surface mounting.
Notes
1. Epoxy meets UL94 V0 at 1/8".
November 1998
5
Rev 1.300
NXP Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYW29EB, BYW29ED series
MECHANICAL DATA
Dimensions in mm
seating plane
Net Mass: 1.1 g
6.73 max
1.1
tab
2.38 max
0.93 max
5.4
4 min
6.22 max
10.4 max
4.6
2
1
0.5
0.5 min
3
0.3
0.5
0.8 max
(x2)
2.285 (x2)
Fig.14. SOT428 : centre pin connected to tab.
MOUNTING INSTRUCTIONS
Dimensions in mm
7.0
7.0
2.15
1.5
2.5
4.57
Fig.15. SOT428 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
November 1998
6
Rev 1.300
NXP Semiconductors
Legal information
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
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This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
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URL http://www.nxp.com.
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