BFS505 NPN 9 GHz wideband transistor

DISCRETE SEMICONDUCTORS
DATA SHEET
BFS505
NPN 9 GHz wideband transistor
Product specification
September 1995
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
FEATURES
BFS505
PINNING
 Low current consumption
PIN
DESCRIPTION
3
handbook, 2 columns
 High power gain
Code: N0
 Low noise figure
1
base
 High transition frequency
2
emitter
 Gold metallization ensures
excellent reliability
3
collector
1
Top view
 SOT323 envelope.
2
MBC870
Fig.1 SOT323.
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
It is intended for low power amplifiers,
oscillators and mixers particularly in
RF portable communication
equipment (cellular phones, cordless
phones, pagers) up to 2 GHz.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
VCBO
collector-base voltage
open emitter


20
RBE = 0


15
V


18
mA
up to Ts = 147 C; note 1


150
mW
VCES
collector-emitter voltage
IC
DC collector current
Ptot
total power dissipation
hFE
DC current gain
IC = 5 mA; VCE = 6 V; Tj = 25 C
60
120
250
fT
transition frequency
IC = 5 mA; VCE = 6 V; f = 1 GHz;
Tamb = 25 C

9

GHz
GUM
maximum unilateral power gain
Ic = 5 mA; VCE = 6 V; f = 900 MHz; 
Tamb = 25 C
17

dB
F
noise figure
Ic = 1.25 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 C

1.2
1.7
dB
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995
2
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS505
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter

20
V
VCES
collector-emitter voltage
RBE = 0

15
V
VEBO
emitter-base voltage
open collector

2.5
V
IC
DC collector current

18
mA
Ptot
total power dissipation

150
mW
Tstg
storage temperature
65
+150
C
Tj
junction temperature

175
C
up to Ts = 147 C; note 1
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to Ts = 147 C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995
3
THERMAL RESISTANCE
190 K/W
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS505
CHARACTERISTICS
Tj = 25 C, unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 6 V


50
hFE
DC current gain
IC = 5 mA; VCE = 6 V
60
120
250
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz

0.4

pF
nA
Cc
collector capacitance
IE = ie = 0; VCB = 6 V; f = 1 MHz

0.4

pF
Cre
feedback capacitance
IC = 0; VCB = 0.5 V; f = 1 MHz

0.3

pF
fT
transition frequency
IC = 5 mA; VCE = 6 V; f = 1 GHz;
Tamb = 25 C

9

GHz
GUM
maximum unilateral power gain IC = 5 mA; VCE = 6 V; f = 900 MHz;
(note 1)
Tamb = 25 C

17

dB
IC = 5 mA; VCE = 6 V; f = 2 GHz;
Tamb = 25 C

10

dB
S212
insertion power gain
IC = 5 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 C
13
14

dB
F
noise figure
s = opt; IC = 1.25 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 C

1.2
1.7
dB
s = opt; IC = 5 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 C

1.6
2.1
dB
s = opt; IC = 1.25 mA; VCE = 6 V;
f = 2 GHz; Tamb = 25 C

1.9

dB
PL1
output power at 1 dB gain
compression
Ic = 5 mA; VCE = 6 V; RL = 50 ;
f = 900 MHz; Tamb = 25 C

4

dBm
ITO
third order intercept point
note 2

10

dBm
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S 21
- dB.
G UM = 10 log --------------------------------------------------------2
2
 1 – S 11   1 – S 22 
2. IC = 5 mA; VCE = 6 V; RL = 50 ; f = 900 MHz; Tamb = 25 C;
fp = 900 MHz; fq = 902 MHz; measured at f(2pq) = 898 MHz and at f(2qp) = 904 MHz.
September 1995
4
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS505
MRC020 - 1
MRC019
200
200
handbook,
halfpage
handbook, halfpage
Ptot
(mW)
h FE
150
150
100
100
50
50
0
10−3
0
0
50
100
150
200
10−2
10−1
10
102
I C (mA)
1
T ( o C)
s
VCE = 6 V; Tj = 25 C.
Fig.2 Power derating curve.
Fig.3
MRC011
DC current gain as a function of collector
current.
MRC013
12
handbook,0.5
halfpage
handbook,
f halfpage
C re
(pF)
0.4
T
(GHz)
10
VCE = 8 V
8
3V
0.3
6
0.2
4
0.1
0
2
0
2
4
6
8
0
10−1
10
VCB (V)
IC = 0; f = 1 MHz.
f = 1 GHz; Tamb = 25 C.
Fig.4
Fig.5
Feedback capacitance as a function of
collector-base voltage.
September 1995
5
1
10
I C (mA)
102
Transition frequency as a function of
collector current.
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS505
In Figs 6 to 9, GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available
gain.
MRC016
25
gain
(dB)
MRC017
20
handbook, halfpage
handbook, halfpage
gain
(dB)
20
G UM
15
MSG
15
G max
MSG
10
G UM
10
5
5
0
0
2
4
6
0
8
I C (mA)
0
2
4
6
8
I C (mA)
VCE = 6 V; f = 2 GHz; Tamb = 25 C.
VCE = 6 V; f = 900 MHz; Tamb = 25 C.
Fig.6 Gain as a function of collector current.
Fig.7 Gain as a function of collector current.
MRC015
MRC014
50
handbook, 50
halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
G UM
40
40
G UM
30
30
MSG
20
20
MSG
G max
10
10
G max
0
10−2
10−1
1
f (GHz)
0
10−2
10
IC = 1.25 mA; VCE = 6 V; Tamb = 25 C.
1
f (GHz)
10
IC = 5 mA; VCE = 6 V; Tamb = 25 C.
Fig.8 Gain as a function of frequency.
September 1995
10−1
Fig.9 Gain as a function of frequency.
6
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS505
MRC018
4
MRC012
4
handbook, halfpage
handbook, halfpage
F
(dB)
F
(dB)
3
3
I C = 5 mA
2
2
f = 2 GHz
1.25 mA
900 MHz
1
500 MHz
0
10−1
1
1
I C (mA)
0
10−1
10
1
f (GHz)
10
VCE = 6 V; Tamb = 25 C.
VCE = 6 V; Tamb = 25 C.
Fig.10 Minimum noise figure as a function of
collector current.
Fig.11 Minimum noise figure as a function of
frequency.
September 1995
7
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
pot. unst.
region
handbook, full pagewidth
BFS505
90°
1.0
1
135°
0.8
45°
2
0.5
0.6
stability
0.2
circle
0.4
5
Fmin = 1. 2 dB
180°
0.2
0
0.5
1
0.2
ΓOPT 5
2
0°
F = 1.5 dB
0
F = 2 dB
0.2
5
F = 3 dB
0.5
2
−135°
−45°
1
MRC073
1.0
−90°
IC = 1.25 mA; VCE = 6 V;
f = 900 MHz; Zo = 50 .
Fig.12 Noise circle.
90°
handbook, full pagewidth
1.0
1
135°
F = 4 dB
F = 3 dB
0.5
0.8
45°
2
0.6
F = 2.5 dB
Fmin = 1.9 dB
0.2
0.4
5
ΓOPT
0.2
180°
0.2
0
0.5
1
5
2
0°
0
5
0.2
0.5
2
−135°
−45°
1
MRC074
IC = 1.25 mA; VCE = 6 V;
f = 2 GHz; Zo = 50 .
−90°
Fig.13 Noise circle.
September 1995
8
1.0
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS505
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
180°
0.2
0
0.5
1
2
5
3 GHz
0°
0
40 MHz
5
0.2
0.5
2
−135°
−45°
1
MRC056
−90°
IC = 5 mA; VCE = 6 V;
Zo = 50 .
Fig.14 Common emitter input reflection coefficient (S11).
90°
handbook, full pagewidth
135°
45°
40 MHz
3 GHz
180°
15
12
9
6
0°
3
−135°
−45°
−90°
MRC057
IC = 5 mA; VCE = 6 V.
Fig.15 Common emitter forward transmission coefficient (S21).
September 1995
9
1.0
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS505
90°
handbook, full pagewidth
135°
45°
3 GHz
40 MHz
180°
0.5
0.4
0.3
0.2
0°
0.1
−135°
−45°
−90°
MRC058
IC = 5 mA; VCE = 6 V.
Fig.16 Common emitter reverse transmission coefficient (S12).
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
180°
0.2
0
0.5
1
2
5
40 MHz
3 GHz
0.2
0.5
0
5
2
−135°
0°
−45°
1
MRC059
IC = 5 mA; VCE = 6 V;
Zo = 50 .
−90°
Fig.17 Common emitter output reflection coefficient (S22).
September 1995
10
1.0
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS505
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
September 1995
REFERENCES
IEC
JEDEC
JEITA
SC-70
11
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS505
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
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the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
September 1995
12
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS505
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NXP Semiconductors does not accept any liability related
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Quick reference data  The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
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Non-automotive qualified products  Unless this data
sheet expressly states that this specific NXP
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Limiting values  Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
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reliability of the device.
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September 1995
13
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Printed in The Netherlands
R77/03/pp14
Date of release: September 1995