Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BTA212X series D, E and F
Three quadrant triacs
guaranteed commutation
Product specification
June 2003
NXP Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
GENERAL DESCRIPTION
Passivated guaranteed commutation
triacs in a full pack, plastic envelope
intended for use in motor control circuits
or with other highly inductive loads.
These
devices
balance
the
requirements
of
commutation
performance and gate sensitivity. The
"sensitive gate" E series and "logic level"
D series are intended for interfacing with
low power drivers, including micro
controllers.
PINNING - SOT186A
PIN
BTA212X series D, E and F
QUICK REFERENCE DATA
SYMBOL
PARAMETER
BTA212XBTA212XBTA212XRepetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
VDRM
IT(RMS)
ITSM
PIN CONFIGURATION
MAX.
MAX.
UNIT
600D
600E
600F
600
800E
800
V
12
95
12
95
A
A
SYMBOL
DESCRIPTION
case
1
main terminal 1
2
main terminal 2
3
gate
T2
T1
G
1 2 3
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VDRM
Repetitive peak off-state
voltages
IT(RMS)
RMS on-state current
ITSM
Non-repetitive peak
on-state current
I2t
dIT/dt
IGM
PGM
PG(AV)
Tstg
Tj
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate power
Average gate power
CONDITIONS
MIN.
-
full sine wave;
Ths ≤ 56 ˚C
full sine wave;
Tj = 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 20 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
over any 20 ms
period
Storage temperature
Operating junction
temperature
MAX.
-600
6001
UNIT
-800
800
V
-
12
A
-
95
105
45
100
A
A
A2s
A/µs
-
2
5
0.5
A
W
W
-40
-
150
125
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
June 2003
1
Rev 3.000
NXP Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA212X series D, E and F
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Visol
R.M.S. isolation voltage from all
three terminals to external
heatsink
f = 50-60 Hz; sinusoidal
waveform;
R.H. ≤ 65% ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN.
TYP.
MAX.
UNIT
-
-
2500
V
-
10
-
pF
MIN.
TYP.
MAX.
UNIT
-
55
4.0
5.5
-
K/W
K/W
K/W
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-hs
Thermal resistance
junction to heatsink
Rth j-a
Thermal resistance
junction to ambient
full or half cycle
with heatsink compound
without heatsink compound
in free air
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
BTA212X-
2
IGT
Gate trigger current
VD = 12 V; IT = 0.1 A
T2+ G+
T2+ GT2- GVD = 12 V; IGT = 0.1 A
T2+ G+
T2+ GT2- G-
IL
Latching current
IH
Holding current
VD = 12 V; IGT = 0.1 A
VT
VGT
On-state voltage
Gate trigger voltage
ID
Off-state leakage current
IT = 17 A
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A;
Tj = 125 ˚C
VD = VDRM(max); Tj = 125 ˚C
MAX.
UNIT
...D
...E
...F
-
5
5
5
10
10
10
25
25
25
mA
mA
mA
-
15
25
25
25
30
30
30
40
40
mA
mA
mA
-
15
25
30
mA
0.25
1.6
1.5
-
V
V
V
-
0.5
mA
2 Device does not trigger in the T2-, G+ quadrant.
June 2003
2
Rev 3.000
NXP Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA212X series D, E and F
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
BTA212X-
dVD/dt
Critical rate of rise of
off-state voltage
dIcom/dt
Critical rate of change of
commutating current
dIcom/dt
Critical rate of change of
commutating current
June 2003
VDM = 67% VDRM(max);
Tj = 110 ˚C; exponential
waveform; gate open
circuit
VDM = 400 V; Tj = 125 ˚C;
IT(RMS) = 12 A;
dVcom/dt = 10 V/µs; gate
open circuit
VDM = 400 V; Tj = 125 ˚C;
IT(RMS) = 12 A;
dVcom/dt = 0.1 V/µs; gate
open circuit
3
...D
MAX.
UNIT
...E
...F
30
60
70
-
V/µs
1.0
8.0
21
-
A/ms
3.5
16
32
-
A/ms
Rev 3.000
NXP Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
20
BTA212X series D, E and F
Ths(max) / C
Ptot / W
45
15
BT138X
IT(RMS) / A
= 180
15
56 C
120
1
65
90
10
60
10
85
30
5
105
5
0
0
5
125
15
10
0
-50
0
50
Ths / C
IT(RMS) / A
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
1000
100
150
Fig.4. Maximum permissible rms current IT(RMS) ,
versus heatsink temperature Ths.
ITSM / A
25
IT(RMS) / A
20
dI T /dt limit
15
100
10
I TSM
IT
T
5
time
Tj initial = 25 C max
10
10us
100us
1ms
T/s
10ms
0
0.01
100ms
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
100
1.6
ITSM
IT
T
10
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Ths ≤ 56˚C.
ITSM / A
80
0.1
1
surge duration / s
VGT(Tj)
VGT(25 C)
1.4
time
Tj initial = 25 C max
1.2
60
1
40
0.8
20
0
0.6
1
10
100
Number of cycles at 50Hz
0.4
-50
1000
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
June 2003
0
50
Tj / C
100
150
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
4
Rev 3.000
NXP Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA212X series D, E and F
IGT(Tj)
IGT(25°C)
40
3
IT / A
Tj = 125 C
Tj = 25 C
T2+ G+
T2+ GT2- G-
2.5
typ
max
30 Vo = 1.175 V
Rs = 0.0316 Ohms
2
20
1.5
1
10
0.5
0
0
-50
0
50
Tj/°C
100
150
0.5
1
1.5
VT / V
2
2.5
3
Fig.10. Typical and maximum on-state characteristic.
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
3
0
IL(Tj)
IL(25 C)
10
Zth j-hs (K/W)
with heatsink compound
without heatsink compound
2.5
1
2
unidirectional
bidirectional
0.1
1.5
1
P
D
tp
0.01
0.5
t
0
-50
0
50
Tj / C
100
0.001
10us
150
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
3
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
Fig.11. Transient thermal impedance Zth j-hs, versus
pulse width tp.
IH(Tj)
IH(25C)
103
dIcom/dt (A/ms)
F TYPE
E TYPE
D TYPE
2.5
102
2
1.5
10
1
0.5
0
-50
0
50
Tj / C
100
1
150
20
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
June 2003
40
60
80
100
120
Tj (˚C)
140
Fig.12. Minimum critical rate of change of
commutating current dIcom/dt versus junction
temperature, dVcom/dt = 10 V/µs.
5
Rev 3.000
NXP Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA212X series D, E and F
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
4.6
max
3.2
3.0
2.9 max
2.8
Recesses (2x)
2.5
0.8 max. depth
6.4
15.8
max.
19
max.
15.8
max
seating
plane
3 max.
not tinned
3
2.5
13.5
min.
1
0.4
2
3
M
1.0 (2x)
0.6
2.54
0.9
0.7
0.5
2.5
5.08
1.3
Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
June 2003
6
Rev 3.000
NXP Semiconductors
Legal information
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
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and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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