BGU7003 - NXP Semiconductors

BGU7003
Wideband silicon germanium low-noise amplifier MMIC
Rev. 02 — 22 June 2010
Product data sheet
1. Product profile
1.1 General description
The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for high speed,
low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT891
package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
„
„
„
„
„
„
„
„
„
„
Low noise high gain microwave MMIC
Applicable between 40 MHz and 6 GHz
Integrated temperature stabilized bias for easy design
Bias current configurable with external resistor
Noise figure NF = 0.80 dB at 1.575 GHz
Insertion power gain = 18.3 dB at 1.575 GHz
110 GHz transit frequency - SiGe:C technology
Power-down mode current consumption < 1 μA
Optimized performance at low 5 mA supply current
ESD protection > 1 kV Human Body Model (HBM) on all pins
1.3 Applications
„
„
„
„
„
GPS
Satellite radio
Low-noise amplifiers for microwave communications systems
WLAN and CDMA applications
Analog / digital cordless applications
BGU7003
NXP Semiconductors
Wideband silicon germanium low-noise amplifier MMIC
1.4 Quick reference data
Table 1.
Quick reference data
Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA; VENABLE ≥ 0.7 V; f = 1575 MHz; ZS = ZL = 50 Ω (input and output matched to
50 Ω) unless otherwise specified.
Symbol
Parameter
Conditions
Min Typ
Max Unit
VCC
supply voltage
RF input AC coupled
2.2
-
2.85 V
3
-
15
mA
−40
+25
+85
°C
ICC(tot)
total supply current
Tamb
ambient temperature
configurable with external resistor
[1]
Tsp ≤ 103 °C
[2]
Ptot
total power dissipation
-
-
70
mW
|s21|2
Insertion power gain
-
18.3
-
dB
NF
noise figure
-
0.80
-
dB
Pi(1dB)
input power at 1 dB gain compression
-
−20.1
-
dBm
IP3I
input third-order intercept point
-
−0.2
-
dBm
jammers at f1 = f + 138 MHz and
f2 = f + 276 MHz
[1]
ICC(tot) = ICC + IRF_OUT + IR_BIAS.
[2]
Tsp is the temperature at the solder point of the ground lead.
2. Pinning information
Table 2.
Pinning
Pin
Description
1
R_BIAS
2
RF_IN
3
GND
4
RF_OUT
5
ENABLE
6
Simplified outline
1
2
Graphic symbol
3
5
6
2
4
1
6
5
4
bottom view
VCC
3
sym128
3. Ordering information
Table 3.
Ordering information
Type number
BGU7003
Package
Name
Description
Version
XSON6
plastic extremely thin small outline package; no leads; SOT891
6 terminals; body 1 × 1 × 0.5 mm
4. Marking
Table 4.
Marking codes
Type number
Marking code
BGU7003
B3
BGU7003
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 22 June 2010
2 of 18
BGU7003
NXP Semiconductors
Wideband silicon germanium low-noise amplifier MMIC
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min Max
Unit
VCC
supply voltage
RF input AC coupled
-
3.0
V
ICC(tot)
total supply current
configurable with external resistor
-
25
mA
Ptot
total power dissipation
Tsp ≤ 103 °C
-
70
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
150
°C
[1]
[1]
Tsp is the temperature at the solder point of the ground lead.
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Rth(j-sp)
thermal resistance from junction to solder point
Conditions
Typ
Unit
235
K/W
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA; VENABLE ≥ 0.7 V unless otherwise specified. All
measurements done on characterization board without matching, de-embedded up to the pins.
Symbol Parameter
Conditions
VCC
RF input AC coupled
supply voltage
ICC(tot)
total supply current
Tamb
ambient temperature
|s21|2
insertion power gain
Min Typ
Max
Unit
2.2
-
2.85
V
configurable with external resistor
[1]
3
-
15
mA
VENABLE ≤ 0.4 V
[1]
-
-
0.001 mA
−40
+25
+85
°C
Tamb = 25 °C
f = 1.575 GHz
16.0 17.5 -
dB
f = 2.4 GHz
[2]
14.0 15.2 -
dB
f = 5.8 GHz
[2]
10.0 11.4 -
dB
f = 1.575 GHz
[2]
15.0 17.5 -
dB
f = 2.4 GHz
[2]
13.0 15.2 -
dB
f = 5.8 GHz
[2]
9.0
11.4 -
dB
f = 1.575 GHz
-
20.5 -
dB
f = 2.4 GHz
-
17.8 -
dB
f = 5.8 GHz
-
15.4 -
dB
f = 1.575 GHz
-
0.70 -
dB
f = 2.4 GHz
-
0.80 -
dB
f = 5.8 GHz
-
1.5
dB
−40 °C ≤ Tamb ≤ 85 °C
MSG
NFmin
maximum stable gain
minimum noise figure
[1]
ICC(tot) = ICC + IRF_OUT + IR_BIAS.
[2]
Guaranteed by design and characterization.
BGU7003
Product data sheet
-
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 22 June 2010
3 of 18
BGU7003
NXP Semiconductors
Wideband silicon germanium low-noise amplifier MMIC
Table 8.
ENABLE (pin 5)
−40 °C ≤ Tamb ≤ +85 °C
VENABLE (V)
State
≤ 0.4
OFF
≥ 0.7
ON
001aaj652
30
ICC(tot)
(mA)
(3)
20
(2)
10
(1)
0
0
1000
2000
3000
4000
5000
6000 7000
Rbias (Ω)
Tamb = 25 °C.
(1) VCC = 2.2 V
(2) VCC = 2.5 V
(3) VCC = 2.85 V
Fig 1.
Total supply current as a function of bias resistor; typical values
BGU7003
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 22 June 2010
4 of 18
BGU7003
NXP Semiconductors
Wideband silicon germanium low-noise amplifier MMIC
90°
1.0
+1
135°
+0.5
0.8
45°
+2
0.6
+0.2
0.4
+5
0.2
180°
0
0.2
1
0.5
2
5
10
0°
0
6 GHz
100 MHz
−5
−0.2
−135°
−2
−0.5
−45°
−1
1.0
−90°
001aaj653
Tamb = 25 °C; ICC(tot) = 5.0 mA; VCC = 2.5 V; Pdrive = −30 dBm; Z0 = 50 Ω.
Fig 2.
Input reflection coefficient (S11); typical values
90°
1.0
+1
135°
+0.5
0.8
45°
+2
0.6
+0.2
0.4
+5
0.2
180°
0
0.2
1
0.5
2
5
10
0°
0
100 MHz
−0.2
−135°
6 GHz
−5
−2
−0.5
−45°
−1
−90°
1.0
001aaj654
Tamb = 25 °C; ICC(tot) = 5.0 mA; VCC = 2.5 V; Pdrive = −30 dBm; Z0 = 50 Ω.
Fig 3.
Output reflection coefficient (S22); typical values
BGU7003
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 22 June 2010
5 of 18
BGU7003
NXP Semiconductors
Wideband silicon germanium low-noise amplifier MMIC
001aaj655
30
|s21|2
(dB)
001aaj657
0
|s12|2
(dB)
20
−20
10
−40
0
0
2000
4000
6000
−60
0
2000
4000
f (MHz)
Tamb = 25 °C; ICC(tot) = 5.0 mA; VCC = 2.5 V;
Pdrive = −30 dBm; Z0 = 50 Ω.
Tamb = 25 °C; ICC(tot) = 5.0 mA; VCC = 2.5 V;
Pdrive = −30 dBm; Z0 = 50 Ω.
Insertion power gain (|s21|2) as a function of
frequency; typical values
Fig 4.
Isolation (|s12|2) as a function of frequency;
typical values
Fig 5.
001aaj659
1
6000
f (MHz)
001aaj660
2.0
NFmin
(dB)
K
1.5
1.0
0.5
10−1
0
0
2000
4000
6000
0
f (MHz)
6000
Tamb = 25 °C; ICC(tot) = 5.0 mA; VCC = 2.5 V;
Pdrive = −30 dBm; Z0 = 50 Ω.
Rollet’s stability factor as a function of
frequency; typical values
Fig 7.
Minimum noise figure as a function of
frequency; typical values
BGU7003
Product data sheet
4000
f (MHz)
Tamb = 25 °C; ICC(tot) = 5.0 mA; VCC = 2.5 V;
Pdrive = −30 dBm; Z0 = 50 Ω.
Fig 6.
2000
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 22 June 2010
6 of 18
BGU7003
NXP Semiconductors
Wideband silicon germanium low-noise amplifier MMIC
90°
1.0
+1
135°
+0.5
0.8
45°
+2
0.6
6 GHz
+0.2
0.4
+5
100 MHz
180°
0
0.2
1
0.5
2
5
10
0°
0
−5
−0.2
−135°
0.2
−2
−0.5
−45°
−1
1.0
−90°
001aaj661
Tamb = 25 °C; ICC(tot) = 5.0 mA; VCC = 2.5 V.
Fig 8.
Optimum source reflection coefficient for minimum noise figure; typical values
001aaj662
0.3
rn(eq)
0.2
0.1
0
0
2000
4000
6000
f (MHz)
Tamb = 25 °C; ICC(tot) = 5.0 mA; VCC = 2.5 V.
Normalized to 50 Ω.
Fig 9.
Equivalent noise resistance as a function of frequency; typical values
BGU7003
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 22 June 2010
7 of 18
BGU7003
NXP Semiconductors
Wideband silicon germanium low-noise amplifier MMIC
8. Application information GPS LNA
Other applications available. Please contact your local sales representative for more
information. Application note(s) available on the NXP website.
8.1 Application circuit
In Figure 10 the application diagram as supplied on the evaluation board is given.
X3
Rb
Vcc
Ven
GND
C3
R3
1
RF in
L1
C1
2
X1
R1
6
BGU7003
L3
4
L4
C2
RF out
X2
5
L2
3
001aaj663
Fig 10. Circuit diagram of the evaluation board
Table 9.
List of components
For circuit, see Figure 10.
Component Description
C1, C2
capacitor
Value
Supplier name/type
Remarks
100 pF
[1]
MurataGRM1555
DC blocking
MurataGRM1555
decoupling
C3
capacitor
180 pF
[1]
L1
inductor
2.7 nH
[1]
Murata/LQW15A high quality input matching
factor, low series resistance
L2
inductor
33 nH
[1]
Murata/LQW15A high quality input matching
factor, low series resistance
L3
inductor
3.9 nH
[1]
Murata/LQG15HS
output matching /
DC shunt
L4
inductor
4.7 nH
[1]
Murata/LQG15HS
output matching
R1
resistor
180 Ω
[1]
R2
resistor
0Ω
[1]
bridge
R3
resistor
3300 Ω
[1]
bias setting
X1, X2
SMA RF connector -
Johnson, end launch SMA
142-0701-841
RF input / RF output
X3
DC header
Molex, PCB header, right
angle, 1 row, 4 way
90121-0764
bias connector
[1]
-
all capacitors, inductors and resistors have 0402 footprint.
BGU7003
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 22 June 2010
8 of 18
BGU7003
NXP Semiconductors
Wideband silicon germanium low-noise amplifier MMIC
8.2 Application board layout
Figure 11 shows the board layout with component identifications.
X1
RF in
L1
L2
C1
BGU7003_v2.0
Application board
GND
JJ 02/2008
FR4 H = 0.2 Er = 4.6
Semiconductors
Rb
R3
BGU7003
Vcc
R2
L3
R1
L4
Ven
C3
C2
GND
RF out
X3
X2
001aaj664
Fig 11. Printed-Circuit Board (PCB) of the BGU7003 evaluation board
8.3 Printed-Circuit Board
The material that has been used for the evaluation board is FR4 using the stack shown in
Figure 12.
35 μm Cu
0.2 mm FR4 critical
35 μm Cu
0.8 mm FR4 only for
mechanical rigidity of PCB
35 μm Cu
001aaj688
Material supplier is ISOLA DURAVER; εr = 4.6 to 4.9; tan δ = 0.02.
Fig 12. Stack of the PCB material
BGU7003
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 22 June 2010
9 of 18
BGU7003
NXP Semiconductors
Wideband silicon germanium low-noise amplifier MMIC
8.4 GPS evaluation board
Table 10. GPS application characteristics
Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA; f = 1.575 GHz; VENABLE ≥ 0.7 V; ZS = ZL = 50 Ω (input and output matched to
50 Ω) unless otherwise specified.
Symbol
Parameter
Min
Typ
Max
Unit
|s21|2
Insertion power gain
-
18.3
-
dB
|s11
|2
Conditions
input return loss
-
−5.4
-
dB
|s22|2
output return loss
-
−19.5
-
dB
|s12|2
isolation
-
−24.6
-
dB
NF
noise figure
-
0.80
-
dB
Pi(1dB)
input power at 1 dB gain compression
-
−20.1
-
dBm
PL(1dB)
output power at 1 dB gain compression
-
−2.8
-
dBm
IP3I
input third-order intercept point
jammers at f1 = f + 138 MHz and
f2 = f + 276 MHz
-
−0.2
-
dBm
f1 = f + 5 MHz; f2 = f + 10 MHz
-
−5.2
-
dBm
90°
1.0
+1
135°
+0.5
0.8
45°
+2
0.6
+0.2
0.4
+5
500 MHz
180°
0
0.2
1
0.5
5
3 GHz
−0.2
−135°
2
0°
−45°
−1
−90°
0
−5
−2
−0.5
10
0.2
1.0
001aaj665
Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA; VENABLE ≥ 0.7 V; ZS = ZL = 50 Ω (input and output
matched to 50 Ω).
Fig 13. Input reflection coefficient (S11); typical values
BGU7003
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 22 June 2010
10 of 18
BGU7003
NXP Semiconductors
Wideband silicon germanium low-noise amplifier MMIC
90°
1.0
+1
135°
+0.5
0.8
45°
+2
0.6
+0.2
0.4
+5
500 MHz
180°
0
0.2
1
0.5
2
5
0.2
10
0°
0
−5
−0.2
3 GHz
−135°
−2
−0.5
−45°
−1
1.0
−90°
001aaj666
Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA; VENABLE ≥ 0.7 V; ZS = ZL = 50 Ω (input and output
matched to 50 Ω).
Fig 14. Output reflection coefficient (S22); typical values
001aaj667
0
001aaj668
0
|2
|s11
(dB)
|s22|2
(dB)
−2
−10
−4
−6
−20
−8
−10
0
500
1000
1500
2000
2500
3000 3500
f (MHz)
Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA;
VENABLE ≥ 0.7 V; ZS = ZL = 50 Ω (input and output
matched to 50 Ω).
Fig 15. Input return loss (|s11|2) as a function of
frequency; typical values
−30
0
1000
1500
2000
2500
3000 3500
f (MHz)
Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA;
VENABLE ≥ 0.7 V; ZS = ZL = 50 Ω (input and output
matched to 50 Ω).
Fig 16. Output return loss (|s22|2) as a function of
frequency; typical values
BGU7003
Product data sheet
500
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 22 June 2010
11 of 18
BGU7003
NXP Semiconductors
Wideband silicon germanium low-noise amplifier MMIC
001aaj669
30
|S21|2
(dB)
001aaj702
0
|S12|2
(dB)
20
−20
10
−40
0
0
500
1000
1500
2000
2500
3000 3500
f (MHz)
−60
Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA;
VENABLE ≥ 0.7 V; ZS = ZL = 50 Ω (input and output
matched to 50 Ω).
Fig 17. Insertion power gain (|s21|2) as a function of
frequency; typical values
001aaj671
40
IP3I = −0.2 dBm
P
(dB)
0
0
500
1000
2500
3000 3500
f (MHz)
Fig 18. Reverse Isolation (|s12|2) as a function of
frequency; typical values
001aaj672
40
IP3I = −5.2 dBm
0
−40
2000
Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA;
VENABLE ≥ 0.7 V; ZS = ZL = 50 Ω (input and output
matched to 50 Ω).
P
(dB)
PL
1500
PL
−40
IMD3
IMD3
−80
−80
−120
−40
−30
−20
−10
0
10
Pdrive (dBm)
Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA;
f = 1.575 GHz; f1 = f + 138 MHz; f2 = f + 276 MHz;
VENABLE ≥ 0.7 V; ZS = ZL = 50 Ω (input and output
matched to 50 Ω)
Fig 19. Load power and third order intermodulation
distortion as function of drive power;
typical values
−120
−40
−20
−10
0
Pdrive (dBm)
Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA;
f = 1.575 GHz; f1 = f + 5 MHz; f2 = f + 10 MHz;
VENABLE ≥ 0.7 V; ZS = ZL = 50 Ω (input and output
matched to 50 Ω)
Fig 20. Load power and third order intermodulation
distortion as function of drive power;
typical values
BGU7003
Product data sheet
−30
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 22 June 2010
12 of 18
BGU7003
NXP Semiconductors
Wideband silicon germanium low-noise amplifier MMIC
001aaj673
22
001aaj674
25
2
Gp
(dB)
Gp
(dB)
NF
(dB)
20
1.5
Gp
18
15
1
NF
14
10
10
−35
−31
−27
−23
−19
−15
Pdrive (dBm)
Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA;
f = 1.575 GHz; VENABLE ≥ 0.7 V; ZS = ZL = 50 Ω (input
and output matched to 50 Ω).
Fig 21. Power gain as a function of drive power;
typical values
0.5
5
1475
1575
0
1675
1625
f (MHz)
Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA;
VENABLE ≥ 0.7 V; ZS = ZL = 50 Ω (input and output
matched to 50 Ω).
Fig 22. Power gain and noise figure as function of
frequency; typical values
BGU7003
Product data sheet
1525
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 22 June 2010
13 of 18
BGU7003
NXP Semiconductors
Wideband silicon germanium low-noise amplifier MMIC
9. Package outline
XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1 x 0.5 mm
1
SOT891
b
3
2
4×
(1)
L
L1
e
6
5
e1
4
e1
6×
A
(1)
A1
D
E
terminal 1
index area
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max
A1
max
b
D
E
e
e1
L
L1
mm
0.5
0.04
0.20
0.12
1.05
0.95
1.05
0.95
0.55
0.35
0.35
0.27
0.40
0.32
Note
1. Can be visible in some manufacturing processes.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
05-04-06
07-05-15
SOT891
Fig 23. Package outline SOT891 (XSON6)
BGU7003
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 22 June 2010
14 of 18
BGU7003
NXP Semiconductors
Wideband silicon germanium low-noise amplifier MMIC
10. Soldering
1.05
0.5
(6×)
1.4
0.6
(6×)
solder resist
solder land plus
solder paste
0.7
occupied area
Dimensions in mm
0.15
(6×)
0.25
(6×)
0.35
sot891_fr
Reflow soldering is the only recommended soldering method.
Fig 24. Reflow soldering footprint
11. Abbreviations
Table 11.
Abbreviations
Acronym
Description
AC
Alternating Current
CDMA
Code Division Multiple Access
DC
Direct Current
FR4
Flame Retardant 4
GPS
Global Positioning System
LNA
Low-Noise Amplifier
MMIC
Monolithic Microwave Integrated Circuit
RF
Radio Frequency
SiGe:C
Silicon Germanium Carbon
SMA
SubMiniature version A
WLAN
Wireless Local Area Network
12. Revision history
Table 12.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BGU7003 v.2
20100622
Product data sheet
-
BGU7003 v.1
-
-
Modifications:
BGU7003 v.1
•
Legal information updated.
20090302
Product data sheet
BGU7003
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 22 June 2010
15 of 18
BGU7003
NXP Semiconductors
Wideband silicon germanium low-noise amplifier MMIC
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
BGU7003
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 22 June 2010
16 of 18
BGU7003
NXP Semiconductors
Wideband silicon germanium low-noise amplifier MMIC
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BGU7003
Product data sheet
© NXP B.V. 2010. All rights reserved.
Rev. 02 — 22 June 2010
17 of 18
BGU7003
NXP Semiconductors
Wideband silicon germanium low-noise amplifier MMIC
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
8.2
8.3
8.4
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information GPS LNA . . . . . . . . . . 8
Application circuit . . . . . . . . . . . . . . . . . . . . . . . 8
Application board layout . . . . . . . . . . . . . . . . . . 9
Printed-Circuit Board . . . . . . . . . . . . . . . . . . . . 9
GPS evaluation board . . . . . . . . . . . . . . . . . . 10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 14
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15
Legal information. . . . . . . . . . . . . . . . . . . . . . . 16
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Contact information. . . . . . . . . . . . . . . . . . . . . 17
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 22 June 2010
Document identifier: BGU7003