Datasheet - NXP Semiconductors

DISCRETE SEMICONDUCTORS
DATA SHEET
BTA212 series D, E and F
Three quadrant triacs
guaranteed commutation
Product specification
June 2003
NXP Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA212 series D, E and F
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated guaranteed commutation triacs in
a plastic envelope intended for use in motor
control circuits or with other highly inductive
loads. These devices balance the
requirements of commutation performance
and gate sensitivity. The "sensitive gate" E
series and "logic level" D series are intended
for interfacing with low power drivers,
including micro controllers.
PINNING - TO220AB
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
SYMBOL
PARAMETER
BTA212BTA212BTA212Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
VDRM
IT(RMS)
ITSM
PIN CONFIGURATION
UNIT
600D
600E
600F
600
V
12
95
A
A
SYMBOL
tab
T2
tab
MAX.
T1
G
1 23
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VDRM
Repetitive peak off-state
voltages
IT(RMS)
RMS on-state current
ITSM
Non-repetitive peak
on-state current
I2t
dIT/dt
IGM
PGM
PG(AV)
Tstg
Tj
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate power
Average gate power
CONDITIONS
full sine wave;
Tmb ≤ 99 ˚C
full sine wave;
Tj = 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 20 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
over any 20 ms
period
Storage temperature
Operating junction
temperature
MIN.
MAX.
UNIT
-
6001
V
-
12
A
-
95
105
45
100
A
A
A2s
A/µs
-
2
5
0.5
A
W
W
-40
-
150
125
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
June 2003
1
Rev 3.000
NXP Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA212 series D, E and F
THERMAL RESISTANCES
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
in free air
junction to ambient
Rth j-a
CONDITIONS
MIN.
TYP.
MAX.
UNIT
-
60
1.5
2.0
-
K/W
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
BTA212-
2
IGT
Gate trigger current
VD = 12 V; IT = 0.1 A
T2+ G+
T2+ GT2- GVD = 12 V; IGT = 0.1 A
T2+ G+
T2+ GT2- G-
IL
Latching current
IH
Holding current
VD = 12 V; IGT = 0.1 A
VT
VGT
On-state voltage
Gate trigger voltage
ID
Off-state leakage current
IT = 17 A
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A;
Tj = 125 ˚C
VD = VDRM(max); Tj = 125 ˚C
MAX.
UNIT
...D
...E
...F
-
5
5
5
10
10
10
25
25
25
mA
mA
mA
-
15
25
25
20
30
30
25
40
40
mA
mA
mA
-
15
25
30
mA
0.25
1.6
1.5
-
V
V
V
-
0.5
mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
BTA212-
dVD/dt
Critical rate of rise of
off-state voltage
dIcom/dt
Critical rate of change of
commutating current
dIcom/dt
Critical rate of change of
commutating current
VDM = 67% VDRM(max);
Tj = 110 ˚C; exponential
waveform; gate open
circuit
VDM = 400 V; Tj = 125 ˚C;
IT(RMS) = 12 A;
dVcom/dt = 10 V/µs; gate
open circuit
VDM = 400 V; Tj = 125 ˚C;
IT(RMS) = 12 A;
dVcom/dt = 0.1 V/µs; gate
open circuit
...D
MAX.
UNIT
...E
...F
30
60
70
-
V/µs
1.0
8
21
-
A/ms
3.5
16
32
-
A/ms
2 Device does not trigger in the T2-, G+ quadrant.
June 2003
2
Rev 3.000
NXP Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
20
BTA212 series D, E and F
Tmb(max) / C
95
Ptot / W
15
IT(RMS) / A
BT138
= 180
15
99 C
120
1
102.5
90
10
60
10
110
30
5
117.5
5
0
0
5
125
15
10
0
-50
0
50
Tmb / C
IT(RMS) / A
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
1000
100
150
Fig.4. Maximum permissible rms current IT(RMS) ,
versus mounting base temperature Tmb.
ITSM / A
25
IT(RMS) / A
20
dI T /dt limit
15
100
10
I TSM
IT
T
5
time
Tj initial = 25 C max
10
10us
100us
1ms
T/s
10ms
0
0.01
100ms
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
100
1.6
ITSM
IT
T
10
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 99˚C.
ITSM / A
80
0.1
1
surge duration / s
VGT(Tj)
VGT(25 C)
1.4
time
Tj initial = 25 C max
1.2
60
1
40
0.8
20
0
0.6
1
10
100
Number of cycles at 50Hz
0.4
-50
1000
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
June 2003
0
50
Tj / C
100
150
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
3
Rev 3.000
NXP Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA212 series D, E and F
IGT(Tj)
IGT(25°C)
40
3
IT / A
Tj = 125 C
Tj = 25 C
T2+ G+
T2+ GT2- G-
2.5
typ
max
30 Vo = 1.175 V
Rs = 0.0316 Ohms
2
20
1.5
1
10
0.5
0
0
-50
0
50
Tj/°C
100
150
0.5
1
1.5
VT / V
2
2.5
3
Fig.10. Typical and maximum on-state characteristic.
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
3
0
IL(Tj)
IL(25 C)
10
Zth j-mb (K/W)
2.5
1
unidirectional
2
bidirectional
0.1
1.5
1
P
D
tp
0.01
0.5
t
0
-50
0
50
Tj / C
100
0.001
10us
150
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
3
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
IH(Tj)
IH(25C)
103
dIcom/dt (A/ms)
F TYPE
E TYPE
D TYPE
2.5
102
2
1.5
10
1
0.5
0
-50
0
50
Tj / C
100
1
150
20
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
June 2003
40
60
80
100
120
Tj (˚C)
140
Fig.12. Minimum critical rate of change of
commutating current dIcom/dt versus junction
temperature, dVcom/dt =10V/µs.
4
Rev 3.000
NXP Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA212 series D, E and F
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max 1 2 3
(2x)
0,9 max (3x)
2,54 2,54
0,6
2,4
Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
June 2003
5
Rev 3.000
NXP Semiconductors
Legal information
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DEFINITIONS
Product specification ⎯ The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
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Semiconductors products, and NXP Semiconductors
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NXP Semiconductors
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Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
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reliability of the device.
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