PBSS2515YPN 15 V low V_CE(sat) NPN/PNP transistor

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
MBD128
PBSS2515YPN
15 V low VCE(sat) NPN/PNP
transistor
Product data sheet
Supersedes data of 2002 May 08
2005 Jan 11
NXP Semiconductors
Product data sheet
15 V low VCE(sat) NPN/PNP transistor
FEATURES
PBSS2515YPN
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage
SYMBOL
• High current capability
VCEO
collector-emitter voltage
15
V
ICM
peak collector current
1
A
RCEsat
equivalent on-resistance
<500
mΩ
• Replaces two SC-70 packaged low VCEsat transistors on
same PCB area
• Reduces required PCB area
• Reduced pick and place costs.
PARAMETER
MAX.
UNIT
PINNING
PIN
APPLICATION
• General purpose switching and muting
• Low frequency driver circuits
• LCD backlighting
DESCRIPTION
1, 4
emitter
TR1; TR2
2, 5
base
TR1; TR2
6, 3
collector
TR1; TR2
• Supply line switching circuits
• Battery driven equipment (mobile phones, video
cameras and hand-held devices).
6
handbook, halfpage
5
6
4
5
4
TR2
DESCRIPTION
TR1
NPN/PNP low VCEsat transistor pair in a SC-88 plastic
package.
1
2
Top view
3
1
2
3
MAM445
MARKING
TYPE NUMBER
Fig.1
MARKING CODE
PBSS2515YPN
Simplified outline SC-88 (SOT363) and
symbol.
N8*
Note
1. * = -: made in Hong Kong
* = t: made in Malaysia
* = W: made in China.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PBSS2515YPN
2005 Jan 11
SC-88
DESCRIPTION
plastic surface mounted package; 6 leads
2
VERSION
SOT363
NXP Semiconductors
Product data sheet
15 V low VCE(sat) NPN/PNP transistor
PBSS2515YPN
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
VCBO
collector-base voltage
open emitter
−
15
V
VCEO
collector-emitter voltage
open base
−
15
V
VEBO
emitter-base voltage
open collector
−
6
V
IC
collector current (DC)
−
500
mA
ICM
peak collector current
−
1
A
IBM
peak base current
−
100
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
−
300
mW
Tamb ≤ 25 °C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
2005 Jan 11
3
VALUE
UNIT
416
K/W
NXP Semiconductors
Product data sheet
15 V low VCE(sat) NPN/PNP transistor
PBSS2515YPN
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
ICBO
collector-base cut-off current
IEBO
emitter-base cut-off current
hFE
DC current gain
VCEsat
collector-emitter saturation
voltage
VCB = 15 V; IE = 0 A
−
−
100
nA
VCB = 15 V; IE = 0 A; Tj = 150 °C
−
−
50
μA
VEB = 5 V; IC = 0 A
−
−
100
nA
VCE = 2 V; IC = 10 mA
200
−
−
VCE = 2 V; IC = 100 mA; note 1
150
−
−
VCE = 2 V; IC = 500 mA; note 1
90
−
−
IC = 10 mA; IB = 0.5 mA
−
−
25
mV
IC = 200 mA; IB = 10 mA
−
−
150
mV
IC = 500 mA; IB = 50 mA; note 1
−
−
250
mV
RCEsat
equivalent on-resistance
IC = 500 mA; IB = 50 mA; note 1
−
300
<500
mΩ
VBEsat
base-emitter saturation voltage
IC = 500 mA; IB = 50 mA; note 1
−
−
1.1
V
VBEon
base-emitter turn-on voltage
VCE = 2 V; IC = 100 mA; note 1
−
−
0.9
V
NPN transistor
fT
transition frequency
IC = 100 mA; VCE = 5 V; f = 100 MHz
250
420
−
MHz
Cc
collector capacitance
VCB = 10 V; IE = Ie = 0 A; f = 1 MHz
−
4.4
6
pF
PNP transistor
fT
transition frequency
IC = −100 mA; VCE = −5 V;
f = 100 MHz
100
280
−
MHz
Cc
collector capacitance
VCB = −10 V; IE = Ie = 0 A; f = 1 MHz
−
−
10
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2005 Jan 11
4
NXP Semiconductors
Product data sheet
15 V low VCE(sat) NPN/PNP transistor
PBSS2515YPN
MLD687
600
MLD689
1200
VBE
handbook, halfpage
handbook, halfpage
(1)
(mV)
hFE
1000
(1)
400
800
(2)
(2)
600
200
(3)
(3)
400
0
10−1
1
10
102
IC (mA)
200
10−1
103
1
TR1 (NPN) VCE = 2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
TR1 (NPN) VCE = 2 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.2
Fig.3
DC current gain as a function of collector
current; typical values.
MLD691
103
handbook, halfpage
10
102
IC (mA)
103
Base-emitter voltage as a function of
collector current; typical values.
MLD690
1200
handbook, halfpage
VBEsat
VCEsat
(mV)
(mV)
1000
(1)
102
800
(1)
(2)
600
(2)
(3)
10
(3)
400
1
10−1
1
10
102
IC (mA)
200
10−1
103
1
TR1 (NPN) IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
TR1 (NPN) IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.4
Fig.5
Collector-emitter saturation voltage as a
function of collector current; typical values.
2005 Jan 11
5
10
102
IC (mA)
103
Base-emitter saturation voltage as a
function of collector current; typical values.
NXP Semiconductors
Product data sheet
15 V low VCE(sat) NPN/PNP transistor
PBSS2515YPN
MLD692
102
handbook, halfpage
MLD688
1200
handbook, halfpage
RCEsat
10
(3)
(4)
IC
(mA)
(Ω)
(2)
(1)
(5)
800
(6)
(1)
(7)
(2)
(8)
(3)
1
400
(9)
(10)
10−1
10−1
1
10
102
IC (mA)
0
103
0
4
2
6
8
10
VCE (V)
TR1 (NPN) Tamb = 25 °C.
(1)
(2)
(3)
(4)
IB = 4.6 mA.
IB = 4.14 mA.
IB = 3.68 mA.
IB = 3.22 mA.
(5) IB = 2.76 mA.
TR1 (NPN) IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.6
Equivalent on-resistance as a function of
collector current; typical values.
2005 Jan 11
Fig.7
6
(6) IB = 2.3 mA.
(7) IB = 1.84 mA.
(8) IB = 1.38 mA.
(9) IB = 0.92 mA.
(10) IB = 0.46 mA.
Collector current as a function of
collector-emitter voltage; typical values.
NXP Semiconductors
Product data sheet
15 V low VCE(sat) NPN/PNP transistor
PBSS2515YPN
MLD693
600
MLD695
−1200
VBE
handbook, halfpage
handbook, halfpage
hFE
(mV)
(1)
−1000
(1)
400
−800
(2)
(2)
−600
200
(3)
(3)
−400
0
−10−1
−1
−10
−200
−10−1
−103
−102
IC (mA)
TR2 (PNP) VCE = −2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
−1
(3) Tamb = −55 °C.
TR2 (PNP) VCE = −2 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.8
Fig.9
DC current gain as a function of collector
current; typical values.
MLD697
−103
handbook, halfpage
−10
−102
−103
IC (mA)
Base-emitter voltage as a function of
collector current; typical values.
MLD696
−1200
handbook, halfpage
VBEsat
VCEsat
(mV)
(mV)
−1000
(1)
−102
(2)
−800
(1)
−600
(3)
−10
(2)
(3)
−400
−1
−10−1
−1
−10
−102
IC (mA)
−200
−10−1
−103
−1
−10
−102
−103
IC (mA)
TR2 (PNP) IC/IB = 20.
TR2 (PNP) IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.10 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.11 Base-emitter saturation voltage as a
function of collector current; typical values.
2005 Jan 11
7
NXP Semiconductors
Product data sheet
15 V low VCE(sat) NPN/PNP transistor
PBSS2515YPN
MLD698
103
handbook, halfpage
MLD694
−1200
handbook, halfpage
RCEsat
(Ω)
(3)
(4)
IC
(mA)
(2)
(1)
102
(5)
−800
(6)
(7)
10
(8)
−400
1
(1)
(2)
10−1
−10−1
(9)
−1
−10
(10)
(3)
−102
0
−103
IC (mA)
0
−4
−2
−6
−8
−10
VCE (V)
TR2 (PNP) Tamb = 25 °C.
IB = −7 mA.
IB = −6.3 mA.
IB = −5.6 mA.
IB = −4.9 mA.
(5) IB = −4.2 mA.
(1)
(2)
(3)
(4)
TR2 (PNP) IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.12 Equivalent on-resistance as a function of
collector current; typical values.
2005 Jan 11
(6) IB = −3.5 mA.
(7) IB = −2.8 mA.
(8) IB = −2.1 mA.
(9) IB = −1.4 mA.
(10) IB = −0.7 mA.
Fig.13 Collector current as a function of
collector-emitter voltage; typical values.
8
NXP Semiconductors
Product data sheet
15 V low VCE(sat) NPN/PNP transistor
PBSS2515YPN
PACKAGE OUTLINE
Plastic surface-mounted package; 6 leads
SOT363
D
E
B
y
X
A
HE
6
5
v M A
4
Q
pin 1
index
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT363
2005 Jan 11
REFERENCES
IEC
JEDEC
JEITA
SC-88
9
EUROPEAN
PROJECTION
ISSUE DATE
04-11-08
06-03-16
NXP Semiconductors
Product data sheet
15 V low VCE(sat) NPN/PNP transistor
PBSS2515YPN
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2005 Jan 11
10
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
R75/03/pp11
Date of release: 2005 Jan 11
Document order number: 9397 750 14428