Bumped Wafer Specification

INTEGRATED CIRCUITS
DATA SHEET
ADDENDUM
SL2 ICS10
I•CODE EPC
Smart Label IC
Bumped Wafer Specification
Product Specification
Revision 3.0
2004 January 30
080830
Philips Semiconductors
Product Specification Revision 3.0 2004 January 30
Bumped Wafer Specification
SL2 ICS10
CONTENTS
1
SCOPE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
REFERENCE DOCUMENTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
Philips Documents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
3
MECHANICAL SPECIFICATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
3.1
3.2
3.3
3.4
3.5
Wafer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Wafer Backside . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Chip Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Passivation on Front . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Au Bump . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
3
3
3
3
4
FAIL DIE IDENTIFICATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
4.1
Wafer Mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
5
ORDERING INFORMATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
6
CHIP ORIENTATION AND BONDPAD LOCATIONS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7
ELECTRICAL SPECIFICATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
7.1
7.2
7.3
Absolute Maximum Ratings(1)(2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
8
FINAL WAFERTEST SPECIFICATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
9
DATA SHEET STATUS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
10
DEFINITIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
11
DISCLAIMERS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
12
REVISION HISTORY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2
Philips Semiconductors
Product Specification Revision 3.0 2004 January 30
Bumped Wafer Specification
1
SL2 ICS10
SCOPE
3.5
• Bump material:
This specification describes electrical, physical and
dimensional properties of Au-bumped, sawn wafers on
FFC of I•CODE EPC Smart Label IC.
2
2.1
Au Bump
REFERENCE DOCUMENTS
35 – 80 HV 0.005
• Bump shear strength:
> 70 MPa
• Bump height:
18 µm
• Bump height uniformity:
Philips Documents
– within a die:
– within a wafer:
– wafer to wafer:
• Data Sheet ‘General Specification for 8” Wafer’
• Data Sheet ‘General Quality Specification’
• Bump flatness:
• Data Sheet ‘I•CODE EPC Smart Label IC, Functional
Specification’
– LA, LB
• Application Note ‘Coil Design Guide’
–
TestIO/Vss(1)
• Bump size variation:
3.1
MECHANICAL SPECIFICATION
200 mm (8")
• Thickness:
150 µm ± 15 µm
60 x 60 µm
± 5 µm
• Under bump metallisation: sputtered TiW
Si
• Treatment:
ground and stress release
• Roughness:
Ra max. 0.5 µm,
Rt max. 5 µm
Chip Dimensions
• Chip size:
x = 760 µm, y = 560 µm
• Scribe line:
x-line: 60 µm
y-line: 80 µm
3.4
90 x 90 µm
Wafer Backside
• Material:
3.3
± 1.5 µm
Wafer
• Diameter:
3.2
± 2 µm
± 3 µm
± 4 µm
• Bump size:
• Data Sheet ‘Specification of the IBIS Wafermap’
3
> 99.9% pure Au
• Bump hardness:
Passivation on Front
• Type:
Sandwich structure
• Material:
PSG / Nitride (on top)
• Thickness:
500 nm / 600 nm
(1)
3
TestIO and Vss are floating after sawing.
Philips Semiconductors
Product Specification Revision 3.0 2004 January 30
Bumped Wafer Specification
4
SL2 ICS10
FAIL DIE IDENTIFICATION
Every die is electrically tested according to data sheet. Identification of chips with electrical parameters not conform with
the data sheet is done by inking and wafer mapping (all dies at wafer periphery are identified as ‘FAIL’).
The ink information refers to unsawn wafers. At sawn wafers (on FFC) additional ICs are marked as ‘FAIL’ in the wafer
map if damaged during the sawing process. These ICs will not be inked.
4.1
Wafer Mapping
Wafer mapping for failed die information is available on Floppy-Disk.
Format: IBIS format
5
ORDERING INFORMATION
TYPE NAME
SL2 ICS10 01DW/V4
DESCRIPTION
ORDERING CODE
Bumped die on sawn wafer
9352 751 61005
4
Philips Semiconductors
Product Specification Revision 3.0 2004 January 30
Bumped Wafer Specification
CHIP ORIENTATION AND BONDPAD LOCATIONS
(9)
(9)
(1)
TestIO
PAD (center)
x [µm]
y [µm]
LA
590.0
0.0
LB
0.0
0.0
TestIO
-26.0
381.0
Vss
618.0
381.0
Vss
(8)
(4)
(8)
y
LB
LA
(5)
(7)
x
(6)
(7)
6
SL2 ICS10
(2)
(3)
(1)
(2)
(3)
(4)
(5)
x-Scribeline width:
y-Scribeline width:
Chip step, x-length:
Chip step, y-length:
LA bump edge to chip edge, x-length:
60 µm
80 µm
840 µm
620 µm
41 µm
(6) LB bump edge to chip edge, x-length:
(7) LA, LB bump edge to chip edge, y-length:
(8) TestIO, Vss bump edge to chip edge, x-length:
(9) TestIO, Vss bump edge to chip edge, y-length::
Fig.1 Bondpad plan SL2 ICS10.
5
39 µm
71 µm
28 µm
33 µm
Philips Semiconductors
Product Specification Revision 3.0 2004 January 30
Bumped Wafer Specification
7
SL2 ICS10
ELECTRICAL SPECIFICATIONS
7.1
Absolute Maximum Ratings(1)(2)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
°C
Tstg
Storage Temperature Range
−55
+ 140
Tj
Junction Temperature
−55
+ 140
°C
VESD
ESD Voltage Immunity
±2
kVpeak
Imax LA-LB
Maximum Input Peak Current
± 60
mApeak
JEDEC, JESD 22 – A114-B,
Human Body Model
Notes
1. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at these or any conditions other than those described in
the Operating Conditions and Electrical Characteristics section of this specification is not implied.
2. This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects
of excessive static charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying
greater than the rated maxima.
7.2
Operating Conditions
SYMBOL
PARAMETER
TEST CONDITIONS
TYP(1)
MIN
MAX
−25
UNIT
+85
°C
30
mArms
Tjop
Operating Junction Temperature
ILA-LB
Input Current(2)
VLA-LB rd
Minimum Supply Voltage for READ
2.6
2.9
Vrms
VLA-LB wr
Minimum Supply Voltage for WRITE
2.6
2.9
Vrms
fop
Operating Frequency(3)
13.560
13.567
MHz
13.553
Notes
1. Typical ratings are not guaranteed. These values listed are at room temperature.
2. The voltage between LA and LB is limited by the on-chip voltage limitation circuitry (corresponding to parameter
ILA-LB).
3. Bandwidth limitation (± 7 kHz) according to ISM band regulations.
7.3
Electrical Characteristics
Top = −25 to +85 °C
SYMBOL
PARAMETER
LB(2)
TEST CONDITIONS
MIN
TYP(1)
MAX
VLA-LB = 2 Vrms
22.3
23.5
24.7
UNIT
Cres
Input Capacitance between LA –
Pmin rd
Minimum Operating Supply Power for READ(3)
400
µW
Pmin wr
Minimum Operating Supply Power for
WRITE(3)
400
µW
tret
Data Retention
Tamb ≤ 55 °C
Notes
1. Typical ratings are not guaranteed. These values listed are at room temperature.
2. Measured with an HP4285A LCR meter at 13.56 MHz.
3. Including losses in resonant capacitor and rectifier.
6
5
pF
Years
Philips Semiconductors
Product Specification Revision 3.0 2004 January 30
Bumped Wafer Specification
8
SL2 ICS10
FINAL WAFERTEST SPECIFICATION
• Minimum yield per wafer: 30 % of 56276 potential good dies.
7
Philips Semiconductors
Product Specification Revision 3.0 2004 January 30
Bumped Wafer Specification
9
SL2 ICS10
DATA SHEET STATUS
LEVEL
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
Development
DEFINITION
I
Objective data
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Production
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
10 DEFINITIONS
Short-form specification ⎯ The data in a short-form specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values definition ⎯ Limiting values given are in accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are
stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics
sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information ⎯ Applications that are described herein for any of these products are for illustrative purposes
only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified
use without further testing or modification.
11 DISCLAIMERS
Life support applications ⎯ These products are not designed for use in life support appliances, devices, or systems
where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors’
customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify
Philips Semiconductors for any damages resulting from such application.
Right to make changes ⎯ Philips Semiconductors reserves the right to make changes in the products - including
circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance.
When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer
Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use
of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products,
and makes no representations or warranties that these products are free from patent, copyright, or mask work right
infringement, unless otherwise specified.
8
Philips Semiconductors
Product Specification Revision 3.0 2004 January 30
Bumped Wafer Specification
SL2 ICS10
12 REVISION HISTORY
Table 1
Bumped Wafer Specification SL2 ICS10 Revision History
REVISION
DATE
CPCN
3.0
Jan 2004
-
PAGE
DESCRIPTION
Contents updated. Status now -> Product Specification
4
Chapter 5 “ORDERING INFORMATION”:
- added Ordering Code
1.1
Oct 2003
-
Contents updated.
3
Chapter 3 “MECHANICAL SPECIFICATION”:
- rewording
5
Chapter 6 “CHIP ORIENTATION AND BONDPAD LOCATIONS”:
- changed chip orientation and bondpad locations
6
Chapter 7 “ELECTRICAL SPECIFICATIONS”:
- rewording
1.0
Feb. 2003
-
Initial version.
9
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Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected]
© Koninklijke Philips Electronics N.V. 2002
SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.