DISCRETE SEMICONDUCTORS DATA SHEET BF908WR N-channel dual-gate MOS-FET Preliminary specification 1995 Apr 25 NXP Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR FEATURES PINNING High forward transfer admittance Short channel transistor with high forward transfer admittance to input capacitance ratio Low noise gain controlled amplifier up to 1 GHz. PIN SYMBOL 1 s, b 2 d drain 3 g2 gate 2 4 g1 gate 1 APPLICATIONS VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment. DESCRIPTION source d 3 4 g2 DESCRIPTION g1 Depletion type field effect transistor in a plastic microminiature SOT343R package. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. 2 1 s,b Top view MAM198 CAUTION Marking code: MD. The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. Fig.1 Simplified outline (SOT343R) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage 12 V ID drain current 40 mA Ptot total power dissipation 300 mW Tj operating junction temperature 150 C yfs forward transfer admittance 36 43 50 mS Cig1-s input capacitance at gate 1 2.4 3.1 4 pF Crs reverse transfer capacitance f = 1 MHz 20 30 45 fF F noise figure f = 800 MHz 1.5 2.5 dB 1995 Apr 25 2 NXP Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage 12 V ID drain current 40 mA IG1 gate 1 current 10 mA IG2 gate 2 current 10 mA Ptot total power dissipation 300 mW Tstg storage temperature 65 +150 C Tj operating junction temperature +150 C up to Tamb = 45 C; see Fig.2; note 1 Note 1. Device mounted on a printed-circuit board. MLD154 400 handbook, halfpage Ptot (mW) 300 200 100 0 0 50 100 150 200 Tamb ( oC) Fig.2 Power derating curve. 1995 Apr 25 3 NXP Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 350 K/W Rth j-s thermal resistance from junction to soldering point Ts = 87 C; note 2 210 K/W Notes 1. Device mounted on a printed-circuit board. 2. Ts is the temperature at the soldering point of the source lead. STATIC CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)G1-SS gate 1-source breakdown voltage VG2-S = VDS = 0; IG1-S = 10 mA 8 V(BR)G2-SS gate 2-source breakdown voltage VG1-S = VDS = 0; IG2-S = 10 mA 8 20 V V(P)G1-S gate 1-source cut-off voltage VG2-S = 4 V; VDS = 8 V; ID = 20 A 2 V V(P)G2-S gate 2-source cut-off voltage VG1-S = 4 V; VDS = 8 V; ID = 20 A 1.5 V IDSS drain-source current VG2-S = 4 V; VDS = 8 V; VG1-S = 0 3 15 27 mA IG1-SS gate 1 cut-off current VG2-S = VDS = 0; VG1-S = 5 V 50 nA IG2-SS gate 2 cut-off current VG1-S = VDS = 0; VG2-S = 5 V 50 nA 20 V DYNAMIC CHARACTERISTICS Common source; Tamb = 25 C; VDS = 8 V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified. SYMBOL PARAMETER yfs forward transfer admittance CONDITIONS pulsed; Tj = 25 C MIN. 36 TYP. 43 MAX. 50 UNIT mS Cig1-s input capacitance at gate 1 f = 1 MHz 2.4 3.1 4 pF Cig2-s input capacitance at gate 2 f = 1 MHz 1.2 1.8 2.5 pF Cos drain-source capacitance f = 1 MHz 1.2 1.7 2.2 pF Crs reverse transfer capacitance f = 1 MHz 20 30 45 fF F noise figure f = 200 MHz; GS = 2 mS; BS = BSopt 0.6 1.2 dB f = 800 MHz; GS = GSopt; BS = BSopt 1.5 2.5 dB 1995 Apr 25 4 NXP Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR MRC282 MRC281 40 handbook, halfpage 30 handbook, halfpage VG2-S = 4 V ID (mA) ID (mA) 3V 30 VG1-S = 0.3 V 0.2 V 2V 20 0.1 V 1.5 V 1V 20 0V 0.5 V 10 −0.1 V 10 −0.2 V −0.3 V 0V 0 −0.6 −0.4 0 −0.2 0 0.2 0.4 0 0.6 4 8 12 16 VDS (V) VG1-S (V) VDS = 8 V. Tj = 25 C. VG2-S = 4 V. Tj = 25 C. Fig.3 Transfer characteristics; typical values. Fig.4 Output characteristics; typical values. MRC280 50 Yfs (mS) 40 MRC276 60 4V 3V 2V Yfs (mS) 1.5 V 40 30 1V 20 20 0.5 V 10 VG2-S = 0 V 0 0 0 5 10 15 20 40 25 I D (mA) 0 40 80 120 160 T j (o C) VDS = 8 V. Tj = 25 C. Fig.5 Forward transfer admittance as a function of drain current; typical values. 1995 Apr 25 Fig.6 5 Forward transfer admittance as a function of junction temperature; typical values. NXP Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR PACKAGE OUTLINE Plastic surface-mounted package; reverse pinning; 4 leads D SOT343R E B A X HE y v M A e 3 4 Q A A1 c 2 w M B 1 bp Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.4 0.3 0.7 0.5 0.25 0.10 2.2 1.8 1.35 1.15 1.3 1.15 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-05-21 06-03-16 SOT343R 1995 Apr 25 EUROPEAN PROJECTION 6 NXP Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. DEFINITIONS Product specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. DISCLAIMERS Limited warranty and liability Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 1995 Apr 25 7 NXP Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 1995 Apr 25 8 NXP Semiconductors provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2010 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R77/01/pp9 Date of release: 1995 Apr 25