Datasheet - Union Semiconductor

UM8515
20V P-Channel Power MOSFET
UM8515 SOT23-6
General Description
The UM8515 is a low threshold P-channel MOSFET, have extremely low on-resistance. This
benefit provides the designer with an extremely efficient device for use in battery and load
management applications. The devices use a space-saving, small-outline SOT23-6 package.
Applications
Features





Battery Packs
Battery-Powered Portable Equipment
Cellular and Cordless Telephones

Pin Configurations
Drain-Source Voltage(Max): -20V
Low On-Resistance:
[email protected]=-4.5V
[email protected]=-2.5V
Continuous Drain Current(Max): [email protected]
Top View
XX: Week Code
UM8515
SOT23-6
Ordering Information
Part Number
Packaging Type
Marking Code
UM8515
SOT23-6
UCK
Shipping Qty
3000pcs/7 Inch
Tape & Reel
Absolute Maximum Ratings
Symbol
VDSS
VGS
ID
IDM
PD
TJ
Tstg
RθJA
Parameter
Drain-Source voltage
Gate-Source voltage
Continuous Drain Current
Drain Current Pulsed
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance, Junction-to-Ambient
Value
-20
±8
-2.0
-10
0.7
-55~150
-55~150
100
Units
V
V
A
A
W
℃
℃
℃/W
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UM8515
Electrical Characteristics (TJ=25ºC, Unless otherwise noted)
Symbol
Parameter
Off Characteristics
Drain to Source
BVDSS
Breakdown
Voltage
Zero Gate Voltage
IDSS
Drain Current
Gate-to-Source
IGSS
Leakage Current
On Characteristics
Static
RDS(ON)
Drain-to-Source
On-Resistance
Gate Threshold
VGS(TH)
Voltage
Forward
gfs
Transconductance
Test Condition
Min
VGS=0V, ID=-250μA
-20
Typ
Max
Unit
V
VDS=-20V, VGS=0V
-1
μA
VGS=±8V, VDS=0V
±100
nA
VGS=-4.5V, ID=-2.8A
90
110
VGS=-2.5V, ID=-2A
110
150
-0.6
-1
VDS= VGS , ID=-250μA
VDS=-10V, ID=-2.7A
-0.4
7.0
mΩ
V
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Reverse Transfer
Capacitance
Crss
480
VGS=0V, VDS=-15V,
f=1.0MHz
46
pF
10
Switching Characteristics
Qg(TOT)
Qg(TH)
Qgs
Total Gate Charge
Threshold Gate
Charge
Gate-Source
Charge
7.2
2.2
VDS=-6V, VGS=-4.5V,
ID=-2.8A
Qgd
Gate-Drain Charge
1.2
td(on)
Turn-on Delay
Time
38
tr
Rise Time
td(off)
Turn-off Delay
Time
tf
Fall Time
VGS=-4.5V, VDS=-6V,
RL=6Ω, RG=6Ω
Drain-Source Diode Characteristics and Maximum Ratings
Forward Diode
VSD
VGS=0V, IS=-1A
Voltage
nC
2.2
25
ns
43
5
-0.7
-1.4
V
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UM8515
Typical Characteristics (TJ=25ºC, Unless otherwise noted)
5.0
4.5
5.0
VGS=-2.5V
4.0
3.5
4.0
VGS=-1.8V
VGS=-4.5V
3.5
3.0
3.0
VGS=-1.5V
-ID(A)
-ID(A)
VDS=2.0V
4.5
2.5
2.0
VGS=-1.2V
2.5
2.0
1.5
1.5
1.0
1.0
0.5
VGS=-1.0V
0.5
0.0
0.0
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.5
1.0
1.5
2.0
2.5
3.0
-VGS(V)
-VDS(V)
Fig2. Typical Transfer Characteristics
Fig1. Typical Output Characteristics
0.015
0.025
ID=1.5A
0.012
RDSON(ohm)
RDSON(ohm)
0.020
0.015
0.010
0.006
VGS=-4.5V
0.003
0.005
0.000
1.5
0.000
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.0200
VGS=4.5V,ID=-16A
0.0125
IDSS(uA)
RDSON(ohm)
0.0150
0.0100
0.0075
0.0050
0.0025
0.0000
-60 -40 -20 0
20 40 60 80 100 120 140 160
O
TJ( C)
Fig5. On-Resistance vs. Junction Temperature
2.0
2.5
3.0
3.5
4.0
-ID(A)
-VGS(V)
Fig3. On-Resistance vs. Gate-to-Source Voltage
0.0175
VGS=-2.5V
0.009
Fig4. On-Resistance vs. Drain Current
275
250
225
200
175
150
125
100
75
50
25
0
-25
VGS=0
0
5
10
15
20
25
30
VDS(V)
Fig6. IDS vs. Drain-to-Source Voltage
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UM8515
Package Information
UM8515 SOT23-6
Outline Drawing
D
5
4
1
2
3
L
L1
E
E1
6
Symbol
θ
b
e
c
20
e1
Top View
A
A2
A1
End View
Side View
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
DIMENSIONS
MILLIMETERS
Min
Max
1.050
1.250
0.000
0.100
1.050
1.150
0.300
0.500
0.100
0.200
2.820
3.020
1.500
1.700
2.650
2.950
0.950REF
1.800
2.000
0.600REF
0.300
0.600
0°
8°
INCHES
Min
Max
0.041 0.049
0.000 0.004
0.041 0.045
0.012 0.020
0.004 0.008
0.111 0.119
0.059 0.067
0.104 0.116
0.037REF
0.071 0.079
0.023REF
0.012 0.024
0°
8°
Land Pattern
2.4
0.9
0.7
0.95
0.95
NOTES:
1. Compound dimension: 2.92×1.60;
2. Unit: mm;
3. General tolerance ±0.05mm unless otherwise
specified;
4. The layout is just for reference.
UCK
XX
Tape and Reel Orientation
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UM8515
IMPORTANT NOTICE
The information in this document has been carefully reviewed and is believed to be
accurate. Nonetheless, this document is subject to change without notice. Union assumes
no responsibility for any inaccuracies that may be contained in this document, and makes
no commitment to update or to keep current the contained information, or to notify a
person or organization of any update. Union reserves the right to make changes, at any
time, in order to improve reliability, function or design and to attempt to supply the best
product possible.
Union Semiconductor, Inc
Add: Unit 606, No.570 Shengxia Road, Shanghai 201210
Tel: 021-51093966
Fax: 021-51026018
Website: www.union-ic.com
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