UESD6V8L1F Low Capacitance Single Line ESD Protection Diode Array UESD6V8L1F DFN2/FBP2 1.0×0.6 General Description The UESD6V8L1F ESD protection diode is designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDA’s. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical characteristics for board level protection, such as fast response time, lower operating voltage, lower clamping voltage and no device degradation when compared to MLVs. The UESD6V8L1F ESD protection diode protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. The UESD6V8L1F is available in a DFN2/FBP2 1.0×0.6 (Compatible with SOD882) package with working voltages of 5 volt. It gives designer the flexibility to protect one unidirectional line in applications where arrays are not practical. Additionally, it may be “sprinkled” around the board in applications where board space is at a premium. It may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge). UESD6V8L1F is fabricated using dual diffusion technology offer low junction capacitance (20pF), which is required in high speed signal protection application. Applications Features Cell Phone Handsets and Accessories Personal Digital Assistants (PDA’s) Notebooks, Desktops and Servers Portable Instrumentation Cordless Phones Digital Cameras Peripherals MP3 Players Pin Configurations Transient Protection for Data Lines to IEC 61000-4-2 (ESD) ±15kV (Air), ±8kV (Contact) Small Package for Use in Portable Electronics Suitable Replacement for MLV’s in ESD Protection Applications Protect One I/O or Power Line Low Clamping Voltage Stand-off Voltages: 5V Low Leakage Current Solid-State Silicon-Avalanche Technology Small Body Outline Dimensions: 1.0mm×0.6mm Top View UESD6V8L1F DFN2/FBP2 1.0×0.6 (Compatible with SOD882) ________________________________________________________________________ http://www.union-ic.com Rev.07 Nov.2014 1/7 UESD6V8L1F Ordering Information Part Number Working Voltage Packaging Type Channel Marking Code UESD6V8L1F 5.0V DFN2 1.0mm×0.6mm 1 E2 UESD6V8L1F 5.0V FBP2 1.0mm×0.6mm 1 E2 Shipping Qty 5000pcs/7Inch Tape & Reel 5000pcs/7Inch Tape & Reel Absolute Maximum Ratings RATING SYMBOL VALUE UNITS Peak Pulse Power (tp = 8/20μs) PPK 55 Watts Maximum Peak Pulse Current (tp=8/20μs) ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) Lead Soldering Temperature IPP Amps VPP TL 10.8 ±15 ±8 260 (10 sec.) Operating Temperature Storage Temperature TJ TSTG -55 to +125 -55 to +150 °C °C kV °C Symbol Definition PARAMETER Maximum Reverse Peak Pulse Current Clamping Voltage @ Ipp Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ It Test Current Forward Current Forward Voltage @ IF Peak Power Dissipation Max. Capacitance @ VR = 0V, f = 1MHz SYMBOL IPP VC VRWM IR VBR It IF VF PPK C ________________________________________________________________________ http://www.union-ic.com Rev.07 Nov.2014 2/7 UESD6V8L1F Electrical Characteristics (T=25°C, Device for 5.0V Reverse Stand-off Voltage) PARAMETER SYMBOL Reverse Stand-Off Voltage CONDITIONS MIN TYP MAX UNIT 5 V 7.2 V μA VRWM Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage VBR It = 1mA IR VRWM = 5V, T=25°C 0.1 IPP = 1A, tp = 8/20μs 7 IPP =2A, tp = 8/20μs 8 IPP =5A, tp = 8/20μs 10.8 VC 6 6.8 V Forward Voltage VF IF = 10mA 0.8 V Junction Capacitance CJ VR = 0V, f = 1MHz 17 20 pF Junction Capacitance CJ VR = 2.5V, f = 1MHz 8 10 pF Typical Operating Characteristics Non-Repetitive Peak Pulse Power vs. Pulse Time Clamping Voltage vs. Peak Pulse Current 11 Clamping Voltage - Vc (V) 10 1 0.1 9 8 Waveform parameters: tr=8uS td=20uS 7 6 0.01 0.1 0 1 10 100 1 2 1000 3 4 5 Peak Pulse Current - Ipp (A) Pulse Duration - tp(uS) Forward Voltage vs. Forward Current Junction Capacitance vs. Reverse Voltage 5.0 25 4.5 4.0 20 3.5 Capacitance-(pF) Forward Voltage-Vf(V) Peak Pulse Power - Ppk(kW) 10 3.0 2.5 2.0 1.5 1.0 15 10 5 0.5 0 0.0 0 1 2 3 4 Forward Current-If(A) 5 6 0 1 2 3 4 Revers Voltage-Vr(V) ________________________________________________________________________ http://www.union-ic.com Rev.07 Nov.2014 3/7 5 UESD6V8L1F Application Information Device Connection Options UESD6V8L1F ESD protection diode is designed to protect one data, I/O, or power supply line. The device is unidirectional and may be used on lines where the signal polarity is above ground. The cathode dot should be placed towards the line that is to be protected. Circuit Board Layout Recommendations for Suppression of ESD Good circuit board layout is critical for the suppression of ESD induced transients. The following guidelines are recommended: Place the TVS near the input terminals or connectors to restrict transient coupling. Minimize the path length between the TVS and the protected line. Minimize all conductive loops including power and ground loops. The ESD transient return path to ground should be kept as short as possible. Never run critical signals near board edges. Use ground planes whenever possible. for multilayer printed-circuit boards, use ground vias. Keep parallel signal paths to a minimum. Avoid running protection conductors in parallel with unprotected conductor. Minimize all printed-circuit board conductive loops including power and ground loops. Avoid using shared transient return paths to a common ground point. ________________________________________________________________________ http://www.union-ic.com Rev.07 Nov.2014 4/7 UESD6V8L1F Package Information DFN2 1.0×0.6 Outline Drawing Symbol A A1 b D E E1 e R Symbol A A1 A3 D E b L e DIMENSIONS MILLIMETERS INCHES Min Max Min Max 0.470 0.530 0.019 0.021 0.000 0.050 0.000 0.002 0.200 0.300 0.008 0.012 0.950 1.075 0.037 0.042 0.550 0.675 0.022 0.027 0.450 0.550 0.018 0.022 0.400 0.016 0.050 0.150 0.002 0.006 DIMENSIONS MILLIMETERS Min Typ 0.40 0.00 0.125REF 0.95 1.00 0.55 0.60 0.20 0.25 0.45 0.50 0.65BSC Max 0.50 0.05 1.05 0.65 0.30 0.55 FBP2 1.0×0.6 Outline Drawing Symbol A A1 b D D1 E E1 L DIMENSIONS MILLIMETERS Min Max 0.550 0.010 0.070 0.275 0.325 0.950 1.050 0.275 0.325 0.400REF 0.550 0.650 0.450REF INCHES Min Max 0.021 0.000 0.003 0.011 0.013 0.037 0.041 0.011 0.013 0.016REF 0.022 0.026 0.018REF ________________________________________________________________________ http://www.union-ic.com Rev.07 Nov.2014 5/7 UESD6V8L1F Land Pattern NOTES: 1. Compound dimension: 1.00×0.60: 2. Unit: mm; 3. General tolerance±0.025mm unless otherwise specified; 4. The layout is just for reference. Tape and Reel Orientation ________________________________________________________________________ http://www.union-ic.com Rev.07 Nov.2014 6/7 UESD6V8L1F IMPORTANT NOTICE The information in this document has been carefully reviewed and is believed to be accurate. Nonetheless, this document is subject to change without notice. Union assumes no responsibility for any inaccuracies that may be contained in this document, and makes no commitment to update or to keep current the contained information, or to notify a person or organization of any update. Union reserves the right to make changes, at any time, in order to improve reliability, function or design and to attempt to supply the best product possible. Union Semiconductor, Inc Add: Unit 606, No.570 Shengxia Road, Shanghai 201210 Tel: 021-51093966 Fax: 021-51026018 Website: www.union-ic.com ________________________________________________________________________ http://www.union-ic.com Rev.07 Nov.2014 7/7