Datasheet - Union Semiconductor

UM2302
20V N-Channel Power MOSFET
UM2302S SOT23-3
UM2302P SOT323
General Description
The UM2302 is a low threshold N-channel MOSFET, have extremely low on-resistance. This
benefit provides the designer with an extremely efficient device for use in battery and load
management applications. The device uses a space-saving, small-outline SOT23-3 or SOT323
package.
Applications
Features





Battery Packs
Battery-Powered Portable Equipment
Cellular and Cordless Telephones

Pin Configurations
G
Top View
1
XXX
3
S
Drain-Source Voltage(Max): 20V
Low On-Resistance:
[email protected]=4.5V
[email protected]=2.5V
Continuous Drain Current(Max):
[email protected](SOT23-3)
[email protected](SOT323)
D
2
M: Month Code
XXX: UM2302S 10B
UM2302P VLC
Ordering Information
Part Number
UM2302S
UM2302P
Packaging Type
SOT23-3
SOT323
Marking Code
10B
VLC
Shipping Qty
3000pcs/7 Inch
Tape & Reel
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UM2302
Absolute Maximum Ratings
Symbol
VDSS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID
Continuous Drain Current (5s)
SOT23-3
SOT323
Drain Current Pulsed
(Pulse Width ≤ 10μs, Duty Cycle ≤ 1%)
SOT23-3
Power Dissipation
SOT323
Junction Temperature
Storage Temperature
SOT23-3
Thermal Resistance,
Junction-to-Ambient (≤5s)
SOT323
ESD Method 3015.8
IDP
PD
TJ
Tstg
RθJA
ESD
Value
20
±8
2
1.6
Units
V
V
5
A
A
0.86
0.5
-55~150
-55~150
145
250
2000
W
℃
℃
℃/W
V
Electrical Characteristics (TJ=25ºC, Unless otherwise noted)
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
BVDSS
Drain to Source Breakdown Voltage
VGS=0V, ID=250μA
20
IDSS
Zero Gate Voltage Drain Current
VDS=20V, VGS=0V
0.1
μA
IGSS
Gate-to-Source Leakage Current
VGS=±8V, VDS=0V
±10
μA
Off Characteristics
V
On Characteristics
Static Drain-to-Source
On-Resistance(Note1)
VGS=4.5V, ID=1.0A
90
150
RDS(ON)
VGS=2.5V, ID=1.0A
150
200
VGS(TH)
Gate-Source Threshold Voltage
VDS= VGS , ID=250μA
gfs
Forward Transconductance(Note 1)
VDS=5V, ID=2A
0.40
0.90
4.5
mΩ
V
S
Dynamic Characteristics(Note 2)
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
150
VGS=0V, VDS=10V,
f=1.0MHz
50
pF
40
Switching Characteristics(Note 2)
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
VDD=10V, RL=2.78Ω,
ID=3.6A, VGEN=4.5V,
RG=1Ω
8
15
10
25
30
45
25
40
0.7
1.2
ns
Drain-Source Diode Characteristics and Maximum Ratings
VSD
Forward Diode Voltage
IS=0.95A, VGS=0V
V
Note 1: Pulse test: pulse width ≤ 300μs, duty cycle ≤ 2%.
Note 2: Guaranteed by design, not subject to production testing.
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UM2302
Typical Characteristics (TJ=25ºC, Unless otherwise noted)
Transfer Characterictics
Output Characterictics
3000
5000
Vgs=1.2V
Vgs=1.5V
Vgs=2.0V
Vgs=3.0V
Vgs=4.0V
Vgs=5.0V
3500
2500
ID - Drain Current (mA)
4000
3000
2500
2000
1500
1000
2000
1500
1000
TA=-40℃
500
TA=25℃
500
TA=125℃
0
0
0 0.5 1 1.5 2 2.5
3 3.5
4 4.5
5
0
1
2
VGS - Gate-to-Source Voltage (V)
VDS Drain-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
3
On Resistance vs. Drain Current
1200
270
RDS(on) -On Resistance (m Ω )
25C
Is - Source Current (mA)
ID Drain Current (mA)
4500
1000
800
600
400
200
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Vsd - Source-Drain Voltage (V)
Vgs=2.5V
250
Vgs=4.5V
230
210
190
170
150
130
110
90
70
0
1
2
3
4
ID - Drain Current (A)
5
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UM2302
Typical Characteristics (TJ=25ºC, Unless otherwise noted)
On-Resistance vs. Ambient Temperature
On-Resistance vs. Gate-to-Source Voltage
Vgs=2.5V
TA=-40℃
500
RDS(on) - On-Resistance (m Ω )
RDS(on) - On-Resistance (m Ω )
600
TA=25℃
TA=125℃
400
300
200
100
IDS=1.0A
0
0
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
Vgs=4.5V
260
210
160
110
IDS=1.0A
60
-50
-25
0
25
50
75
100
TA-Ambient Temperature (℃)
Threshold Voltage vs. Ambient
Temperature
0.2
VGS(th) Variance (V)
IDS=250uA
IDS=1mA
0.1
0
-0.1
-0.2
-0.3
-50
-25
0
25
50
75
100 125 150
TA - Ambient Temperature - (℃)
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125
UM2302
Package Information
UM2302S SOT23-3
Outline Drawing
D
θ
b
Symbol
0.2
E
E1
3
2
L1
L
1
e
e1
c
Top View
A
A1
A2
End View
Side View
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
DIMENSIONS
MILLIMETERS
Min
Max
1.050
1.250
0.000
0.100
1.050
1.150
0.300
0.500
0.100
0.200
2.820
3.020
1.500
1.700
2.650
2.950
0.950REF
1.800
2.000
0.550REF
0.300
0.600
0°
8°
INCHES
Min
Max
0.041 0.049
0.000 0.004
0.041 0.045
0.012 0.020
0.004 0.008
0.111 0.119
0.059 0.067
0.104 0.116
0.037REF
0.071 0.079
0.022REF
0.012 0.024
0°
8°
2.02
0.80
Land Pattern
NOTES:
1. Compound dimension: 2.92×1.60;
2. Unit: mm;
3. General tolerance ±0.05mm unless otherwise
specified;
4. The layout is just for reference.
1.90
10B
M
Tape and Reel Orientation
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UM2302
UM2302P SOT323
Outline Drawing
D
Symbol
E
HE
L1
L
b
PIN 1
Q1
e
c
e
Top View
Side View
A1
A
A2
End View
D
E
HE
b
e
Q1
A
A1
A2
c
L
L1
DIMENSIONS
MILLIMETERS
INCHES
Min
Max
Min
Max
1.80
2.20
0.072
0.088
1.15
1.35
0.006
0.054
1.80
2.40
0.072
0.050
0.25
0.40
0.010
0.016
0.65BSC
0.026BSC
0.10
0.40
0.004
0.016
0.80
1.10
0.032
0.044
0.00
0.10
0.00
0.004
0.80
1.00
0.032
0.040
0.10
0.18
0.004
0.007
0.10
0.30
0.004
0.012
0.425TYP
0.017TYP
Land Pattern
0.65
1.80
0.65
0.6
0.5
NOTES:
1. Compound dimension: 2.00×1.25;
2. Unit: mm;
3.General tolerance ±0.05mm unless otherwise
specified;
4. The layout is just for reference.
Tape and Reel Orientation
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UM2302
IMPORTANT NOTICE
The information in this document has been carefully reviewed and is believed to be
accurate. Nonetheless, this document is subject to change without notice. Union assumes
no responsibility for any inaccuracies that may be contained in this document, and makes
no commitment to update or to keep current the contained information, or to notify a
person or organization of any update. Union reserves the right to make changes, at any
time, in order to improve reliability, function or design and to attempt to supply the best
product possible.
Union Semiconductor, Inc
Add: Unit 606, No.570 Shengxia Road, Shanghai 201210
Tel: 021-51093966
Fax: 021-51026018
Website: www.union-ic.com
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