H7N0312AB Silicon N Channel MOS FET High Speed Power Switching REJ03G1127-0400 (Previous: ADE-208-1571B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS (on) = 2.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate 2. Drain (Flange) 3. Source G 1 Rev.4.00 Sep 07, 2005 page 1 of 6 2 3 S H7N0312AB Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Symbol VDSS Value 30 Unit V VGSS ID ±20 85 V A 340 85 A A 125 1.0 W °C/W 150 –55 to +150 °C °C ID (pulse) IDR Note 1 Note 2 Channel dissipation Channel to case thermal impedance Pch θ ch-c Channel temperature Storage temperature Tch Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit V (BR) DSS V (BR) GSS 30 ±20 — — — — V V ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 IGSS IDSS — — — — ±10 10 µA µA VGS = ±16 V, VDS = 0 VDS = 30 V, VGS = 0 VGS (off) RDS (on) 1.0 — — 2.6 2.5 3.3 V mΩ ID = 1 mA, VDS = 10 V Note 3 ID = 42.5 A, VGS = 10 V |yfs| — 75 4.0 125 5.8 — mΩ S ID = 42.5 A, VGS = 4.5 V Note 3 ID = 42.5 A, VDS = 10 V Input capacitance Output capacitance Ciss Coss — — 6900 1750 — — pF pF Reverse transfer capacitance Total gate charge Crss Qg — — 820 115 — — pF nC VDS = 10 V VGS = 0 f = 1 MHz Gate to source charge Gate to drain charge Qgs Qgd — — 24 24 — — nC nC Turn-on delay time Rise time td (on) tr — — 45 380 — — ns ns Turn-off delay time Fall time td (off) tf — — 125 50 — — ns ns Body-drain diode forward voltage Body-drain diode reverse recovery time VDF trr — — 0.92 75 — — V ns Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Note: 3. Pulse test Rev.4.00 Sep 07, 2005 page 2 of 6 Test Conditions Note 3 Note 3 VDD = 10 V VGS = 10 V ID = 85 A VGS = 10 V, ID = 42.5 A RL = 0.24 Ω Rg = 4.7 Ω IF = 85 A, VGS = 0 IF = 85 A, VGS = 0 diF/dt = 50 A/µs H7N0312AB Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area (A) 1000 10 µs 1m 100 DC ID 120 10 Drain Current Channel Dissipation Pch (W) 160 80 40 er 0 50 100 Operation in 1 this area is limited by RDS (on) 0m s 0.1 0.01 0.1 200 150 Case Temperature Tc (°C) 10 V 5V 4V 80 1 3 10 VDS (V) VDS = 10 V Pulse Test 3.5 V 3.2 V 80 Drain Current 60 3.0 V 40 2.8 V 20 40 Tc = 75°C 25°C 20 VGS = 2.5 V –25°C 0 0 0 2 4 6 8 Drain to Source Voltage 10 0 VDS (V) Pulse Test 400 300 200 ID = 50 A 100 20 A 10 A 0 0 4 8 12 Gate to Source Voltage Rev.4.00 Sep 07, 2005 page 3 of 6 16 20 VGS (V) 2 3 4 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source On State Resistance RDS(on) (mΩ) 500 1 Gate to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage VDS(on) (mV) 100 100 Pulse Test 60 Drain to Source Voltage 30 Typical Transfer Characteristics ID (A) 100 0.3 Drain to Source Voltage Typical Output Characteristics ID (A) PW on = 1 ati Tc = 25°C 1 shot Pulse 0 Drain Current Op s 100 µs 100 Pulse Test 30 10 VGS = 4.5 V 3 10 V 1 0.1 0.3 1 3 10 30 100 300 1000 Drain Current ID (A) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (mΩ) H7N0312AB 7 Pulse Test ID = 50 A 6 5 VGS = 4.5 V ID = 10 A, 20 A 4 3 10 A, 20 A, 50 A 2 10 V 1 0 –25 0 25 50 75 100 125 150 Case Temperature Tc 1000 300 Tc = –25°C 100 30 75°C 10 25°C 3 1 VDS = 10 V Pulse Test 0.3 0.1 0.1 30 100 Ciss Capacitance C (pF) Reverse Recovery Time trr (ns) 10 10000 50 20 3000 Coss 1000 Crss 300 di / dt = 50 A / µs VGS = 0, Ta = 25°C 10 0.1 VGS = 0 f = 1 MHz 100 0.3 1 3 10 Reverse Drain Current 30 100 0 30 16 12 VDS 20 8 10 4 VDD = 25 V 10 V 5V 0 0 40 80 Gate Charge Rev.4.00 Sep 07, 2005 page 4 of 6 120 160 Qg (nc) 15 20 25 30 0 200 1000 500 Switching Time t (ns) VDD = 5 V 10 V 25 V 40 VGS (V) VGS Gate to Source Voltage ID = 85 A 10 Switching Characteristics 20 50 5 Drain to Source Voltage VDS (V) IDR (A) Dynamic Input Characteristics (V) 3 Typical Capacitance vs. Drain to Source Voltage 100 VDS 1 Drain Current ID (A) (°C) Body-Drain Diode Reverse Recovery Time Drain to Source Voltage 0.3 tr td(off) 200 100 50 tf td(on) 20 10 0.1 VGS = 10 V, VDS = 10 V Rg = 4.7 Ω, duty ≤ 1 % 0.3 1 3 Drain Current 10 30 ID (A) 100 H7N0312AB Reverse Drain Current vs. Souece to Drain Voltage Reverse Drain Current IDR (A) 100 10 V 80 VGS = 0 V 5V 60 40 20 Pulse Test 0 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 VSD (V) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 θch – c (t) = γ s (t) • θch – c θch – c = 1.0°C/W, Tc = 25°C 0.05 0.02 0.03 PDM 1 e 0.0 puls t o h 1s D= PW T PW T 0.01 10 µ 100 µ 1m 10 m 100 m Pulse Width PW (S) Rev.4.00 Sep 07, 2005 page 5 of 6 1 10 H7N0312AB Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-46 PRSS0004AC-A TO-220AB / TO-220ABV 1.8g Unit: mm 2.79 ± 0.2 11.5 Max 10.16 ± 0.2 9.5 +0.1 φ 3.6 –0.08 1.26 ± 0.15 15.0 ± 0.3 18.5 ± 0.5 1.27 6.4 +0.2 –0.1 8.0 4.44 ± 0.2 7.8 ± 0.5 1.5 Max 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 14.0 ± 0.5 2.7 Max 0.5 ± 0.1 Ordering Information Part Name Quantity Shipping Container H7N0312AB-E 500 pcs Box (Sack) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00 Sep 07, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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