BL8595

BL8595
18V/1A PNP with N-MOSFET CHARGE IC
DESCRIPTION
FEATURES
BL8595 is designed for battery charging controller
with patent BICMOS process, which features PNP
characteristics and a NMOS for base current
blocking. Such base current blocking feature cut off
the base current of PNP transistor when source
current of NMOS is removed, or the gate voltage
indicating the NMOS off.
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BL8595 is also suitable for high side switch in a
system with multi power supplies, when isolating
different power supplies becomes essential.
APPLICATIONS

Range of operation input voltage: Max 18V
Charging current up to 1A
Operation dropout voltage:[email protected]
High isolating N-MOSFET
Package type:SOT23-6
Environment Temperature: -20C~85C
Cell phone and other portable device
BL8595 can block reverse voltage as high as 10V. So
it is safe enough for mobile phone system or other
portable device powered by 1 cell Li-ion battery.
BL8595 is available in SOT23-6L.
MARKING
ORDERING INFORMATION
BL8595 □
1 □
2 □
3
Code
Description
□1
Temperature&Rohs:
C:-40~85C ,Pb Free Rohs Std.
□2
Package type:
B6:SOT-23-6
□3
Packing type:
TR:Tape&Reel (Standard)
PIN CONFIGURATION
BL8595CB6TR
(SOT23-6)
Symbol
Description
1
CHR
NMOS Gate
2
C
PNP Collect
3
B
4
E
PNP Base
(NMOS Drain)
PNP Emit
5
C
PNP Collect
6
GATDV
NMOS Source
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Notice: YW means the year and week parts being
manufactured, subjected to change. OC is the
code of the product, it will not be changed on any
part.
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BL8595
FUNCTION DIAGRAM
TYPICAL APPLICATION CIRCUIT
BL8595
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BL8595
ABSOLUTE MAXIMUM RATING
Parameter
Symbol
Collector-base Voltage(IE=0) (PNP)
Collector-emitter Voltage(IB=0) (PNP)
Emitter-base Voltage(IC=0) (PNP)
Collector Current (PNP)
Base Current (PNP)
Forward Voltage(Source-Drain) (MOSFET)
Gate-Source Voltage (MOSFET)
Source Current (MOSFET)
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Soldering Recommendations (Peak Temperature)
5 sec
VCB0
VCE0
VEB0
IC
IB
VSD
VGS
IS
PD
TJ
Tstg
Steady State
Unit
-18
-18
-10
1.5
-0.2
V
V
V
A
A
1
-0.1
-20
20
V
-0.15
-0.1
1.5
1
−20 to 125
-40 to 150
260(<10s)
A
W
C
THERMAL RESISTANCE RATING
Parameter
Junction-to-Ambient
Junction to Case
Device
t ≤ 5 sec
Steady State
Steady State
Symbol
SOT23-6
SOT23-6
SOT23-6
RthJA
RthJC
Typ
Max
Unit
90
120
60
105
150
80
C /W
ELECTRICAL CHARACTERISTICS
TJ=25C
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICB0
Collector cut-off current(IE=0) (PNP)
VCB=-18V
-0.1
uA
IEB0
Collector cut-off current(IC=0) (PNP)
Collector-emitter breakdown Voltage
(IB=0) (PNP)
VEB=-10V
-0.1
uA
IC=-10uA
-25
-20
-0.4
-0.5
-0.8
-1.1
-1.1
-1.2
-1.0
-0.2
-0.3
-0.5
-0.80
-0.83
-0.90
-0.73
BVCE0
-18
V
Base-emitter Voltage (PNP)
IC=-0.4A
IC=-0.6A
IC=-1A
IC=-0.4A
IC=-0.6A
IC=-1A
IC=-0.5A
hFE
DC current gain (PNP)
IC=-0.6A
100
Vth
Threshold Voltage (MOSFET)
Ids=1uA, Vds=Vgs
0.9
1.3
1.7
V
Igs
Gate-source leakage current (MOSFET)
Vgs=-20V
-1
-0.1
1
uA
Idss
Off-state leakage (MOSFET)
Vg=0, Vs=0V, Vd=10V
1
3
uA
Idson
On –state drain current (MOSFET)
Vs=0.5V, Vg=3.6V, Vd=5V
15
25
mA
VCE(sat)
Collector-emitter saturation Voltage
(PNP)
VBE(sat)
Base-emitter saturation Voltage (PNP)
VBE(on)
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3
VCE=-1V
5
V
V
V
V
V
BL8595
TYPICAL PERFORMANCE CHARACTERISTICS
T=25°C unless specified.
Collector-emitter Current(ICE)
Vs.Voltage(VCE),IB=0
PNP Output
1500
1.2E-04
-20℃
25℃
85℃
-ICE(mA)
1000
IB=-1mA
IB=-10mA
IB=-20mA
IB=-30mA
500
-ICE(A)
1.0E-04
6.0E-05
4.0E-05
2.0E-05
0
0.0E+00
0
0.5
-VCE(V)
1
1.5
0
Dropout Voltage(VCE) Vs.Charge
Current(ICE),T=-20℃
1.2
8.0E-05
0.8
0.8
-VCE(V)
-VCE(V)
1
0.6
0.4
IB=-1mA
IB=-10mA
IB=-20mA
0.2
500
1000
1500
0.4
30
IB=-1mA
IB=-10mA
IB=-20mA
0
0
2000
500
1000
-ICE(mA)
1500
2000
-ICE(mA)
Dropout Voltage(VCE) Vs.Charge
Current(ICE),T=85℃
1.2
20
0.6
0.2
0
0
-VCE(V)
Dropout Voltage(VCE) Vs.Charge
Current(ICE),T=25℃
1.2
1
10
NMOS Threshold Voltage,Vds=Vgs
1.E-01
1.E-03
0.8
Ids(A)
-VCE(V)
1
0.6
0.4
IB=-1mA
IB=-10mA
IB=-20mA
0.2
0
500
-ICE(mA)
1000
1.E-07
1.E-09
0
1500
NMOS Off-state leakage,Vg=Vs=0V
-20℃
25℃
85℃
1.E-03
1.E-04
1.E-05
1.E-06
1.E-07
1.E-08
1.E-09
1.E-10
1.E-11
1.E-12
1
2
3
Vgs(V)
4
5
6
NMOS Drain Current(Ids) Vs.Gate
Voltage,Vs=0.5V,Vd=5V
-20℃
25℃
85℃
60
50
Ids(mA)
Ids(A)
0
1.E-05
40
30
20
10
0
0
5
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10
Vds(V)
15
0
20
1
2
3
Vg(V)
4
4
5
BL8595
PACKAGE OUTLINE
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