BLM4435

Pb Free Product
BLM4435
P-Channel Enhancement Mode Power MOSFET
D
DESCRIPTION
The BLM4435 uses advanced trench technology to provide
G
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 4.5V.
S
GENERAL FEATURES
Schematic diagram
● VDS = -30V,ID = -9.1A
RDS(ON) < 35mΩ @ VGS=-4.5V
RDS(ON) < 20mΩ @ VGS=-10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Marking and pin Assignment
Application
●Battery Switch
●Load switch
●Power management
SOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
4435
BLM4435
SOP-8
Ø330mm
12mm
2500 units
Absolute Maximum Ratings (TA=25℃
℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
Unit
-30
V
±20
V
-9.1
A
-50
A
3.1
W
-55 To 150
℃
40
℃/W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
-30
-33
-
V
Off Characteristics
Drain-Source Breakdown Voltage
Page1
BVDSS
VGS=0V ID=-250µA
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BLM4435
Zero Gate Voltage Drain Current
IDSS
VDS=-30V,VGS=0V
-
-
-1
µA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250µA
-1
-1.5
-3
V
Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-9.1A
-
15
20
mΩ
VGS=-4.5V, ID=-6.9A
-
21
35
mΩ
VDS=-15V,ID=-9.1A
10
-
-
S
-
1600
-
PF
-
350
-
PF
On Characteristics (Note 3)
Forward Transconductance
gFS
Dynamic Characteristics (Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
-
300
-
PF
Turn-on Delay Time
td(on)
-
10
-
nS
Turn-on Rise Time
tr
VDD=-15V, ID=-1A,
-
15
-
nS
td(off)
VGS=-10V,RGEN=6Ω
-
110
-
nS
70
-
nS
-
30
-
nC
-
5.5
-
nC
-
8
-
nC
-
-
-1.2
V
VDS=-15V,VGS=0V,
F=1.0MHz
Switching Characteristics (Note 4)
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=-15V,ID=-9.1A
VGS=-10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=-2.1A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
Page2
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BLM4435
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ton
tr
td(on)
toff
tf
td(off)
90%
VOUT
90%
INVERTED
10%
10%
90%
VIN
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
PD Power(W)
ID- Drain Current (A）
Figure 1:Switching Test Circuit
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
Figure 4 Drain Current
ID- Drain Current (A)
Rdson On-Resistance(Ω)
Figure 3 Power Dissipation
Vds Drain-Source Voltage (V)
ID- Drain Current (A)
Figure 5 Output CHARACTERISTICS
Page3
Figure 6 Drain-Source On-Resistance
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ID- Drain Current (A)
Normalized On-Resistance
BLM4435
Vgs Gate-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Rdson On-Resistance(Ω)
Figure 7 Transfer Characteristics
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 10 Capacitance vs Vds
Vgs Gate-Source Voltage (V)
Is- Reverse Drain Current (A)
Figure 9 Rdson vs Vgs
Qg Gate Charge (nC)
Figure 11 Gate Charge
Page4
Vsd Source-Drain Voltage (V)
Figure 12 Source- Drain Diode Forward
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ID- Drain Current (A)
BLM4435
Vds Drain-Source Voltage (V)
Safe Operation Area
r(t),Normalized Effective
Transient Thermal Impedance
Figure 13
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
Page5
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BLM4435
SOP-8 PACKAGE IN FORMATION
Page6
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