BLM9435 BLM9435 P-Channel Enhancement Mode MOSFET FEATURES APPLICATIONS VDS VGS －30V ±20V RDSon TYP 51mR@-10V 68mR@-4V5 ID －5.4A DESCRIPTION • • • Load Switch TFT panel power switch DCDC conversion Pin Configuration This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Packaging Information Page 1 V1.0 P-Channel Enhancement Mode MOSFET BLM9435 Absolute Maximum Ratings @TA=25℃ ℃ unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous TA=25°C Pulsed (Note 2) Total Power Dissipation (Note 1) Operating and Storage Junction Temperature Range Drain Current (Note 1) Symbol Vdss Vgss Id Pd Tj,Tstg Limit -30 ±20 -5.4 -20 1.5 -55~150 Unit V V A A W ℃ Electrical Characteristics @TA=25℃ ℃ unless otherwise noted Parameter Symbol Test Conditions Min Typ Max OFF CHARACTERISTICS Drain-Source Breakdown Voltage V(br)dss Vgs=0V,Id=-250uA -30 -36 -Zero Gate Voltage Drain Current Idss Vds=-24V,Vgs =0V -- -0.02 -1 Gate–Body Leakage Current Igss Vgs=±20V,Vds=0V -- ±1.5 ±100 ON CHARACTERISTICS Gate Threshold Voltage Vgs(th ) Vds=Vgs,Id=-250µA -1 -1.46 -3 Vgs=-10V,Id=-4.6A -51 60 Drain-Source On-state Resistance Rds(on) Vgs=-4.5V,Id=-2A -68 82 Forward Transconductance Gfs Vds=-5V,Id=-6A -12 -DYNAMIC CHARACTERISTICS Input Capacitance Ciss -550 -Vds=-15V,Vgs=0V Output Capacitance Coss -60 -f =1MHz Reverse Transfer Capacitance Crss -50 -SWITCHING CHARACTERISTICS Turn-On Delay Time Td(on) Vds=-15V,Rl=2.5R, -8.6 -Vgs=-10V,Rgen=3R Turn-Off Delay Time Td(off) -28.2 -DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage Vsd Is=-1A,Vgs=0V -- -0.81 -- Unit V uA nA V mR S pF ns V Notes : 2 1. The value of PD is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the DC thermal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. Page 2 V1.0 P-Channel Enhancement Mode MOSFET BLM9435 P-channel Typical Performance Characteristics Vds, Drain-Source Voltage (V) Fig 1. Output Characteristics Vgs, Gate-to-Source Voltage (V) Fig 2. Transfer Characteristics Vds, Drain-Source Voltage (V) Fig 3. Capacitance Tj, Junction Temperature (℃) Fig 4. On Resistance Vs. Temperature Tj, Junction Temperature (℃) Fig 5. Gate Threshold Vs. Temperature Vsd, Body Diode Forward Voltage (V) Fig 6.Diode Forward Characteristics Page 3 V1.0