BLM9435

BLM9435
BLM9435
P-Channel Enhancement
Mode MOSFET
FEATURES
APPLICATIONS
VDS
VGS
-30V ±20V
RDSon TYP
[email protected]
[email protected]
ID
-5.4A
DESCRIPTION
•
•
•
Load Switch
TFT panel power switch
DCDC conversion
Pin Configuration
This device is produced with high cell density,
DMOS trench technology, which is especially
used to minimize on-state resistance. This
device is particularly suited for low voltage
application such as portable equipment,
power management and other battery powered
circuits, and low in-line power loss are
needed in a very small outline surface mount
package.
Packaging Information
Page 1
V1.0
P-Channel Enhancement Mode MOSFET
BLM9435
Absolute Maximum Ratings @TA=25℃
℃ unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous TA=25°C
Pulsed (Note 2)
Total Power Dissipation (Note 1)
Operating and Storage Junction Temperature Range
Drain Current (Note 1)
Symbol
Vdss
Vgss
Id
Pd
Tj,Tstg
Limit
-30
±20
-5.4
-20
1.5
-55~150
Unit
V
V
A
A
W
℃
Electrical Characteristics @TA=25℃
℃ unless otherwise noted
Parameter
Symbol
Test Conditions
Min Typ Max
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
V(br)dss
Vgs=0V,Id=-250uA -30
-36
-Zero Gate Voltage Drain Current
Idss
Vds=-24V,Vgs =0V
-- -0.02 -1
Gate–Body Leakage Current
Igss
Vgs=±20V,Vds=0V
-- ±1.5 ±100
ON CHARACTERISTICS
Gate Threshold Voltage
Vgs(th )
Vds=Vgs,Id=-250µA -1 -1.46 -3
Vgs=-10V,Id=-4.6A
-51
60
Drain-Source On-state Resistance
Rds(on)
Vgs=-4.5V,Id=-2A
-68
82
Forward Transconductance
Gfs
Vds=-5V,Id=-6A
-12
-DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
-550
-Vds=-15V,Vgs=0V
Output Capacitance
Coss
-60
-f =1MHz
Reverse Transfer Capacitance
Crss
-50
-SWITCHING CHARACTERISTICS
Turn-On Delay Time
Td(on)
Vds=-15V,Rl=2.5R,
-8.6
-Vgs=-10V,Rgen=3R
Turn-Off Delay Time
Td(off)
-28.2
-DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
Vsd
Is=-1A,Vgs=0V
-- -0.81
--
Unit
V
uA
nA
V
mR
S
pF
ns
V
Notes :
2
1. The value of PD is measured with the device mounted on 1in FR-4 board with 2oz. Copper,
in a still air environment with TA =25°C. The value in any given application depends on the
user's specific board design. The current rating is based on the DC thermal resistance
rating.
2. Repetitive rating, pulse width limited by junction temperature.
Page 2
V1.0
P-Channel Enhancement Mode MOSFET
BLM9435
P-channel Typical Performance Characteristics
Vds, Drain-Source Voltage (V)
Fig 1. Output Characteristics
Vgs, Gate-to-Source Voltage (V)
Fig 2. Transfer Characteristics
Vds, Drain-Source Voltage (V)
Fig 3. Capacitance
Tj, Junction Temperature (℃)
Fig 4. On Resistance Vs. Temperature
Tj, Junction Temperature (℃)
Fig 5. Gate Threshold Vs. Temperature
Vsd, Body Diode Forward Voltage (V)
Fig 6.Diode Forward Characteristics
Page 3
V1.0