H7N0203AB Silicon N Channel MOS FET High Speed Power Switching REJ03G1119-0500 (Previous: ADE-208-1490C) Rev.5.00 Sep 07, 2005 Features • Low on-resistance RDS (on) =2.4 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate 2. Drain (Flange) 3. Source G 1 Rev.5.00 Sep 07, 2005 page 1 of 7 2 3 S H7N0203AB Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Symbol VDSS Value 20 Unit V VGSS ID ±20 90 V A 360 90 A A 20 40 A mJ 100 1.25 W °C/W 150 –55 to +150 °C °C ID (pulse) IDR Note 1 Note 2 Avalanche current Avalanche energy IAP Note 2 EAR Channel dissipation Channel to case thermal impedance Pch θ ch-c Note 3 Channel temperature Storage temperature Tch Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Value at Tc = 25°C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol V (BR) DSS Min 20 Typ — Max — Unit V Test Conditions ID = 10 mA, VGS = 0 Gate to source breakdown voltage Gate to source leak current V (BR) GSS IGSS ±20 — — — — ±10 V µA IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 Zero gate voltage drain current Gate to source cutoff voltage IDSS VGS (off) — 1.0 — — 10 2.5 µA V VDS = 20 V, VGS = 0 Note 4 ID = 1 mA, VDS = 10 V Static drain to source on state resistance RDS (on) — — 2.4 3.5 3.0 5.1 mΩ mΩ ID = 45 A, VGS = 10 V Note 4 ID = 45 A, VGS = 4.5 V Forward transfer admittance Input capacitance |yfs| Ciss 80 — 140 6800 — — S pF Output capacitance Reverse transfer capacitance Coss Crss — — 1850 750 — — pF pF ID = 45 A, VDS = 10 V VDS = 10 V VGS = 0 f = 1 MHz Total gate charge Gate to source charge Qg Qgs — — 110 22 — — nC nC Gate to drain charge Turn-on delay time Qgd td (on) — — 20 32 — — nC ns tr 380 110 — — ns ns VGS = 10 V, ID = 45 A RL = 0.22 Ω Rg = 4.7 Ω IF = 90 A, VGS = 0 Rise time Turn-off delay time td (off) — — Fall time Body-drain diode forward voltage tf VDF — — 35 0.90 — — ns V trr — 60 — ns Body-drain diode reverse recovery time Note: 4. Pulse test Rev.5.00 Sep 07, 2005 page 2 of 7 Note 4 VDD = 10 V VGS = 10 V ID = 90 A IF = 90 A, VGS = 0 diF/dt = 50 A/µs Note 4 H7N0203AB Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 1000 10 µs (A) 300 ID 120 10 1 m 0 µs s 100 30 DC Operation (Tc = 25°C) 10 Drain Current Channel Dissipation Pch (W) 160 80 40 3 PW = 10 ms 1 Operation in (1 shot) this area is 0.3 limited by RDS (on) 0.1 0.03 0 0 50 100 200 150 Case Temperature Ta = 25°C 0.01 0.1 Tc (°C) 80 3.0 V 100 VDS (V) 80 Drain Current 60 2.8 V 40 20 40 –25°C Tc = 75°C 20 25°C 0 0 0 2 4 6 Drain to Source Voltage 8 10 0 VDS (V) Pulse Test 0.3 0.2 ID = 50 A 0.1 20 A 10 A 0 0 4 8 12 Gate to Source Voltage Rev.5.00 Sep 07, 2005 page 3 of 7 16 20 VGS (V) 2 3 4 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source On State Resistance RDS (on) (mΩ) 0.4 1 Gate to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage VDS (on) (mV) 30 VDS = 10 V Pulse Test VGS = 2.4 V Drain to Source Voltage 10 100 Pulse Test 60 Drain Current 3 Typical Transfer Characteristics ID (A) ID (A) 10 V 5V 3.5 V 1 Drain to Source Voltage Typical Output Characteristics 100 0.3 10 Pulse Test 5 VGS = 4.5 V 10 V 2 1 1 10 Drain Current 100 ID (A) 1000 Static Drain to Source on State Resistance vs. Temperature 8 Pulse Test 50 A ID = 10, 20 A VGS = 4.5 V ID = 10, 20, 50 A 2 VGS = 10 V 0 –25 0 25 50 75 100 125 150 Case Temperature Tc Tc = –25°C 100 25°C 10 75°C 1 VDS = 10 V Pulse Test 0.1 0.01 Typical Capacitance vs. Drain to Source Voltage (V) VDS 20000 Ciss Drain to Source Voltage Capacitance C (pF) 50000 5000 Coss 1000 500 Crss VGS = 0 f = 1 MHz 200 100 0 4 8 12 16 20 20 50 ID = 90 A 16 VDD = 5 V 10 V 20 V 30 VDS 8 10 0 td(off) 50 tf td(on) 20 3 Drain Current Rev.5.00 Sep 07, 2005 page 4 of 7 80 120 Gate Charge 10 30 ID (A) 100 Reverse Recovery Time trr (ns) Switching Time t (ns) tr 100 1 40 160 0 200 Qg (nc) Static Drain to Source on State Resistance vs. Drain Current 200 0.3 4 VDD = 20 V 10 V 5V 100 VGS = 10 V, VDD = 10 V duty ≤ 1 % 10 0.1 12 20 0 Switching Characteristics 500 VGS 40 Drain to Source Voltage VDS (V) 1000 100 Dynamic Input Characteristics 100000 2000 10 Drain Current ID (A) (°C) 10000 1 0.1 50 20 di / dt = 50 A / µs VGS = 0, Ta = 25°C 10 0.1 0.2 0.5 1 2 5 Drain Current 10 20 IDR (A) 50 100 VGS (V) 4 1000 Gate to Source Voltage 6 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) (mΩ) H7N0203AB H7N0203AB Reverse Drain Current vs. Source to Drain Voltage Repetitive Avalanche Energy EAR (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating Reverse Drain Current IF (A) 100 80 10 V VGS = 0, –5 V 60 5V 40 20 Pulse Test 0 0.4 0 0.8 1.2 1.6 Source to Drain Voltage 2.0 50 IAP = 20 A VDD = 10 V duty < 0.1 % Rg ≥ 50 Ω 40 30 20 10 0 25 VSDF (V) 50 75 100 125 150 Channel Temperature Tch (°C) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θch – c (t) = γ s (t) • θch – c θch – c = 1.25°C/W, Tc = 25°C 0.1 0.05 PDM 2 0.0 1 lse 0 0. pu ot h 1s 0.03 0.01 10 µ D= PW T PW T 100 µ 1m 10 m 100 m 10 1 Pulse Width PW (S) Avalanche Test Circuit VDS Monitor Avalanche Waveform L EAR = 1 • L • IAP2 • 2 VDSS VDSS – VDD IAP Monitor Rg V(BR)DSS IAP D.U.T VDD VDS ID Vin 15 V 50 Ω 0 Rev.5.00 Sep 07, 2005 page 5 of 7 VDD H7N0203AB Switching Time Test Circuit Switching Time Waveform 90% Vout Monitor Vin Monitor D.U.T. Rg Vin Vout Vin 10 V VDS = 10 V 10% 10% 90% td(on) Rev.5.00 Sep 07, 2005 page 6 of 7 10% RL tr 90% td(off) tf H7N0203AB Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-46 PRSS0004AC-A TO-220AB / TO-220ABV 1.8g Unit: mm 2.79 ± 0.2 11.5 Max 10.16 ± 0.2 9.5 +0.1 φ 3.6 –0.08 1.26 ± 0.15 15.0 ± 0.3 18.5 ± 0.5 1.27 6.4 +0.2 –0.1 8.0 4.44 ± 0.2 7.8 ± 0.5 1.5 Max 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 14.0 ± 0.5 2.7 Max 0.5 ± 0.1 Ordering Information Part Name Quantity Shipping Container H7N0203AB-E 500 pcs Box (Sack) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00 Sep 07, 2005 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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