RENESAS N2500N

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
N2500N
SWITCHING
N-CHANNEL MOSFET
PACKAGE DRAWING (Unit: mm)
DESCRIPTION
The N2500N is N-channel MOS Field Effect Transistor designed
for DC-DC converter and 2.5 V drive switching applications.
0.16
+0.1
–0.06
+0.1
0.65 –0.15
0.4 +0.1
–0.05
FEATURES
3
1.5
2.8 ±0.2
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 5.8 Ω MAX. (VGS = 4.5 V, ID = 0.25 A)
RDS(on)2 = 6.6 Ω MAX. (VGS = 2.5 V, ID = 0.25 A)
• Low input capacitance
Ciss = 145 pF TYP.
0 to 0.1
1
2
0.95
0.65
0.95
1.9
• Small and surface mount package (SC-96)
• Built-in gate protection diode
2.9 ±0.2
0.9 to 1.1
1. Gate
2. Source
3. Drain
ORDERING INFORMATION
PART NUMBER
PACKAGE
N2500N-T1B-AT
Note
N2500N-T2B-AT
Note
SC-96 (Mini Mold Thin Type)
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)
Marking: YA
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TA = 25°C)
Note1
Drain Current (pulse)
Total Power Dissipation (TA = 25°C)
Note2
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
EQUIVALENT CIRCUIT
250
±12
±0.5
±2.0
0.2
1.25
150
−55 to +150
V
V
A
A
W
W
°C
°C
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mmt, t ≤ 5 sec
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19677EJ1V1DS00 (1st edition)
Date Published October 2009 NS
Printed in Japan
2009
N2500N
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 250 V, VGS = 0 V
10
μA
Gate Leakage Current
IGSS
VGS = ±12 V, VDS = 0 V
±10
μA
VGS(off)
VDS = 10 V, ID = 1.0 mA
0.5
1.5
V
| yfs |
VDS = 10 V, ID = 0.25 A
0.8
RDS(on)1
VGS = 4.5 V, ID = 0.25 A
4.2
5.8
Ω
RDS(on)2
VGS = 2.5 V, ID = 0.25 A
4.3
6.6
Ω
Input Capacitance
Ciss
VDS = 10 V,
145
pF
Output Capacitance
Coss
VGS = 0 V,
17
pF
Reverse Transfer Capacitance
Crss
f = 1.0 MHz
5
pF
Turn-on Delay Time
td(on)
VDD = 125 V, ID = 0.25 A,
7
ns
Rise Time
tr
VGS = 4.5 V,
12
ns
Turn-off Delay Time
td(off)
RG = 10 Ω
22
ns
Fall Time
tf
35
ns
Total Gate Charge
QG
VDD = 200 V,
4.7
nC
Gate to Source Charge
QGS
VGS = 4.5 V,
0.4
nC
QGD
ID = 0.5 A
2.5
nC
VF(S-D)
IF = 0.5 A, VGS = 0 V
0.82
Reverse Recovery Time
trr
IF = 0.5 A, VGS = 0 V,
45
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/μs
36
nC
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Note
Drain to Source On-state Resistance
Note
Gate to Drain Charge
Body Diode Forward Voltage
Note
1.0
S
1.5
V
Note Pulsed
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
VGS
RL
VGS
RG
PG.
Wave Form
VDD
0
VGS
10%
PG.
90%
τ
τ = 1 μs
Duty Cycle ≤ 1%
2
90%
VDS
VDS
0
10%
10%
tr
td(off)
Wave Form
td(on)
ton
RL
50 Ω
VDD
90%
VDS
VGS
0
IG = 2 mA
tf
toff
Data Sheet D19677EJ1V1DS
N2500N
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
1.4
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
120
100
80
60
40
20
1.2
1
0.8
0.6
0.4
Mounted on FR-4 board of
50 mm x 50 mm x 1.6 mmt,
t ≤ 5 sec
0.2
0
0
0
20
40
60
80
100 120 140 160
0
20
TC - Case Temperature - °C
40
60
80
100 120 140 160
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
10
ID(pulse)
PW
1
0.1
R
D
o
S(
n)
G
1i 0
is
si
0.01
0.1
1
d
it e
im
nL
0.001
t io
pa
Single Pulse
Mounted on FR-4 board of
50 mm x 50 mm x 1.6 mmt
0
μs
1 ms
D
er
(V
d
it e
m )
Li 5 V
4.
=
S
=
w
Po
10
10 ms
30 ms
1i 00 m s
i
100
1000
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(ch-A) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
ID(DC)
Without board
100
Mounted on FR-4 board of
50 mm x 50 mm x 1.6 mmt
10
1
Single Pulse
0.1
100 μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D19677EJ1V1DS
3
N2500N
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
10
1.6
1
1.2
2.5 V
2.0 V
0.8
0.4
0
0.1
Tch = 150°C
125°C
75°C
25°C
−25°C
−55°C
0.01
0.001
0.0001
0
2
4
6
8
0
10
1
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
3
VDS = 10 V
ID = 1.0 mA
2
1
0
-25
25
75
125
175
10
Tch = −55°C
−25°C
25°C
1
75°C
125°C
150°C
0.1
0.01
6
VGS = 2.0 V
4
2.5 V
4.5 V
2
Pulsed
0.1
1
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - Ω
8
0.01
1
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0
0.001
VDS = 10 V
Pulsed
0.1
Tch - Channel Temperature - °C
RDS(on) - Drain to Source On-state Resistance - Ω
3
VGS - Gate to Source Voltage - V
-75
ID - Drain Current - A
4
2
VDS - Drain to Source Voltage - V
| yfs | - Forward Transfer Admittance - S
VGS(off) - Gate to Source Cut-off Voltage - V
VDS = 10 V
Pulsed
VGS = 4.5 V
ID - Drain Current - A
ID - Drain Current - A
Pulsed
12
10
8
ID = 0.5 A
0.25 A
6
0.05 A
4
2
Pulsed
0
0
2
4
6
8
VGS - Gate to Source Voltage - V
Data Sheet D19677EJ1V1DS
10
N2500N
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
12
ID = 0.25 A
Pulsed
2.0 V
8
2.5 V
6
VGS = 4.5 V
4
2
0
-75
25
75
125
1
Crss
VGS = 0 V
f = 1.0 MHz
175
0.1
1
10
100
1000
Tch - Channel Temperature - °C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
6
240
VDS - Drain to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
Coss
10
0.1
-25
100
tf
td(off)
10
tr
td(on)
VDD = 125 V
VGS = 4.5 V
RG = 10 Ω
1
VDD = 200 V
125 V
50 V
200
5
4
160
3
120
VGS
2
80
40
1
VDS
ID = 0.5 A
0
0
0.1
1
0
10
1
2
3
4
5
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
10
6
1000
1
VGS = 4.5 V
0.1
0V
0.01
Pulsed
trr - Reverse Recovery Time - ns
IF - Diode Forward Current - A
Ciss
100
VGS - Gate to Source Voltage - V
10
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - Ω
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100
10
0.001
VGS = 0 V
di/dt = 100 A/μs
1
0
0.2
0.4
0.6
0.8
1
1.2
VF(S-D) - Source to Drain Voltage - V
Data Sheet D19677EJ1V1DS
0.1
1
10
IF - Diode Forward Current - A
5
N2500N
• The information in this document is current as of October, 2009. The information is subject to change without notice. For
actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date
specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with
an NEC Electronics sales representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC
Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the
use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual
property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in
semiconductor product operation and application examples. The incorporation of these circuits, software and information in
the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes
no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and
information.
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree
and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property
or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient
safety measures in their design, such as redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The
"Specific" quality grade applies only to NEC Electronics products developed based on a customer-designated "quality
assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its
quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in
a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual
equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots.
"Special":
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-
"Specific":
Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and
crime systems, safety equipment and medical equipment (not specifically designed for life support).
medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data
sheets or data books, etc.
If customers wish to use NEC Electronics products in applications not intended by NEC
Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness
to support a given application.
(Note 1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majorityowned subsidiaries.
(Note 2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined
above).
(M8E0909E)