FAN73711
High-Current, High-Side Gate Drive IC
Features
Description
Floating Channel for Bootstrap Operation to +600 V
The FAN73711 is a monolithic high-side gate-drive IC
that can drive high-speed MOSFETs and IGBTs operating up to +600 V. It has a buffered output stage with all
NMOS transistors designed for high pulse-current driving
capability and minimum cross-conduction.
4 A / 4 A Sourcing/Sinking Current Driving Capability
Common-Mode dv/dt Noise Canceling Circuit
3.3 V and 5 V Input Logic Compatible
Output In-phase with Input Signal
Under-Voltage Lockout for VBS
Built-In Shunt Regulator on VDD and VBS
8-Lead, Small Outline Package (SOP)
Applications
High-Speed Gate Driver
Sustain Switch Driver in PDP Application
Energy Recovery Circuit Switch Driver in
PDP Application
Fairchild’s high-voltage process and common-mode
noise canceling techniques provide stable operation of
the high-side driver under high dv/dt noise circumstances. An advanced level-shift circuit offers high-side
gate driver operation up to VS=-9.8 V (typical) for
VBS=15 V. The UVLO circuit prevents malfunction when
VBS is lower than the specified threshold voltage.
The high-current and low-output voltage-drop feature
makes this device suitable as a sustain and energyrecovery circuit switch driver in plasma display panel,
motor drive inverter, switching power supply, and highpower DC-DC converter applications.
High-Power Buck Converter
Motor Drive Inverter
8-SOP
Ordering Information
Part Number
Operating Temperature Range
Package
Packing Method
FAN73711MX
40°C ~ 125°C
8-SOP
Tape and Reel
© 2009 Fairchild Semiconductor Corporation
FAN73711 • Rev. 1.0.1
www.fairchildsemi.com
FAN73711 — High-Current, High-Side Gate Drive IC
March 2013
15V
DBOOT3
VS
15V
FAN73711
RBOOT1
DBOOT1
8 VB
Q3
1
VDD
2
IN
4 GND
VB
8
HO
7
VS
6
NC
5
NC 3
5
NC
2
IN3
8
IN
HO
7
3 NC
VS
6
NC
5
GND 4
D2
To Panel
R2
Q1
VB
2
VS
D4
FAN73711
8 VB
Q2
R5
IN2
IN
6
R1
FAN73711
VDD
HO
L1
D1
DBOOT2
1
VDD 1
7
CBOOT3
R4
CBOOT1
3 NC
R3
D3
FAN73711
IN1
RBOOT3
Q4
VDD 1
R7
7
HO
IN
6
VS
NC 3
5
NC
2
IN4
CBOOT2
C1
R6
C3
R8
4 GND
GND 4
C2
Energy Recovery System
Sustain Drive Part
FAN73711 Rev.01
Figure 1. Floated Bi-Directional Switch and Half-Bridge Driver: PDP Application
VIN
15V
RBOOT
DBOOT
FAN73711
1 VDD
VB 8
R1
2 IN
PWM
HO
7
CBOOT
C1
3 NC
4 GND
L1
R2
VS 6
NC
5
D1
C2
VOUT
FAN73711 Rev.01
Figure 2. Step-Down (Buck) DC-DC Converter Application
© 2009 Fairchild Semiconductor Corporation
FAN73711 • Rev. 1.0.1
www.fairchildsemi.com
2
FAN73711 — High-Current, High-Side Gate Drive IC
Typical Application Diagrams
1
GND
4
UVLO
PULSE
GENERATOR
IN
VDD
2
110K
NOISE
CANCELLER
R
R
S
Q
Shoot-through current
compensated gate driver
VDD
8
VB
7
HO
6
VS
Pin 3 and 5 are no connection.
FAN73711 Rev.01
Figure 3. Functional Block Diagram
Pin Configuration
VDD
1
IN
2
8
VB
7
HO
FAN73711
NC
3
6
VS
GND
4
5
NC
FAN73711 Rev.01
Figure 4. Pin Configuration (Top View)
Pin Definitions
Pin #
Name
Description
1
VDD
2
IN
Logic Input for High-Side Gate Driver Output
3
NC
No Connection
4
GND
5
NC
No Connection
6
VS
High-Voltage Floating Supply Return
7
HO
High-Side Driver Output
8
VB
High-Side Floating Supply
Supply Voltage
Ground
© 2009 Fairchild Semiconductor Corporation
FAN73711 • Rev. 1.0.1
www.fairchildsemi.com
3
FAN73711 — High-Current, High-Side Gate Drive IC
Internal Block Diagram
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. TA=25°C unless otherwise specified.
Symbol
Characteristics
(1)
VS
High-Side Floating Offset Voltage
VB
High-Side Floating Supply Voltage
VHO
High-Side Floating Output Voltage
VDD
Low-Side and Logic Supply Voltage
(1)
Max.
Unit
VB-VSHUNT
VB+0.3
V
-0.3
625.0
V
VS-0.3
VB+0.3
V
-0.3
VSHUNT
V
-0.3
VDD+0.3
V
Allowable Offset Voltage Slew Rate
± 50
V/ns
PD
Power Dissipation(2,3,4)
0.625
W
JA
Thermal Resistance
200
C/W
TJ
Junction Temperature
-55
+150
C
TSTG
Storage Temperature
-55
+150
C
VIN
dVS/dt
Logic Input Voltage
Min.
Notes:
1.
2.
3.
4.
This IC contains a shunt regulator on VDD and VBS. This supply pin should not be driven by a low-impedance
voltage source greater than the VSHUNT specified in the Electrical Characteristics section.
Mounted on 76.2 x 114.3 x 1.6 mm PCB (FR-4 glass epoxy material).
Refer to the following standards:
JESD51-2: Integral circuits thermal test method environmental conditions, natural convection, and
JESD51-3: Low effective thermal conductivity test board for leaded surface-mount packages.
Do not exceed power dissipation (PD) under any circumstances.
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to absolute maximum ratings.
Symbol
Parameter
Min.
Max.
Unit
VB
High-Side Floating Supply Voltage
VS+10
VS+20
V
VS
High-Side Floating Supply Offset Voltage
6-VDD
600
V
VS
VB
V
GND
VDD
V
VHO
High-Side Output Voltage
VIN
Logic Input Voltage
VDD
Supply Voltage
10
20
V
Operating Ambient Temperature
-40
+125
C
TA
© 2009 Fairchild Semiconductor Corporation
FAN73711 • Rev. 1.0.1
www.fairchildsemi.com
4
FAN73711 — High-Current, High-Side Gate Drive IC
Absolute Maximum Ratings
VBIAS(VDD, VBS)=15.0 V, TA = 25°C, unless otherwise specified. The VIN and IIN parameters are referenced to GND.
The VO and IO parameters are relative to VS and are applicable to the respective output HO.
Symbol
Characteristics
Power Supply Section
IQDD Quiescent VDD Supply Current
IPDD
Operating VDD Supply Current
Bootstrapped Supply Section
VBS Supply Under-Voltage Positive-Going
VBSUV+
Threshold Voltage
VBS Supply Under-Voltage Negative-Going
VBSUVThreshold Voltage
V Supply Under-Voltage Lockout
VBSHYS BS
Hysteresis Voltage
Test Condition
VIN=0 V or 5 V
25
70
A
fIN=20 kHz, No Load
35
100
A
VBS=Sweep
8.0
9.0
10.0
V
VBS=Sweep
7.3
8.3
9.3
V
VBS=Sweep
0.7
Offset Supply Leakage Current
IQBS
Quiescent VBS Supply Current
VIN=0V or 5 V
Operating VBS Supply Current
CLOAD=1000 pF, fIN=20 kHz,
rms Value
V
10
A
60
120
A
470
800
23
25
V
0.8
V
V
65
A
VB=VS=625 V
ILK
IPBS
Min. Typ. Max. Unit
A
Shunt Regulator Section
VSHUNT
VDD and VBS Shunt Regulator Clamping
Voltage
VDD=Sweep or VBS=Sweep
ISHUNT=5 mA
Input Logic Section
VIH
Logic “1” Input Voltage
Logic “0” Input Voltage
VIL
2.5
IIN+
Logic Input High Bias Current
VIN=5 V
IIN-
Logic Input Low Bias Current
VIN=0 V
RIN
Input Pull-Down Resistance
Gate Driver Output Section
High Level Output Voltage (VBIAS - VO)
VOH
VOL
40
2
90
110
No Load
IO-
No Load
Output High, Short-Circuit Pulsed Current(5) VHO=0 V, VIN=5 V, PW 10 µs
Output Low, Short-Circuit Pulsed Current(5) VHO=15 V,VIN=0 V, PW 10 µs
VS
Allowable Negative VS Pin Voltage for IN
Signal Propagation to HO
IO+
21
Low Level Output Voltage
A
K
1.2
V
30
mV
3
4
A
3
4
A
-9.8
-7.0
V
Note:
5.
These parameters guaranteed by design.
Dynamic Electrical Characteristics
VDD=VBS=15 V, GND=0 V, CLOAD=1000 pF, TA=25°C, unless otherwise specified.
Symbol
Typ.
Max.
Unit
ton
Turn-On Propagation Delay
Parameter
VS=0 V
Conditions
Min.
150
210
ns
toff
Turn-Off Propagation Delay
VS=0 V
150
210
ns
tr
Turn-On Rise Time
25
50
ns
tf
Turn-Off Fall Time
15
40
ns
© 2009 Fairchild Semiconductor Corporation
FAN73711 • Rev. 1.0.1
www.fairchildsemi.com
5
FAN73711 — High-Current, High-Side Gate Drive IC
Electrical Characteristics
200
180
180
tOFF [ns]
tON [ns]
200
160
160
140
140
120
120
100
100
-40
-20
0
20
40
60
80
100
-40
120
-20
0
50
50
40
40
30
20
10
10
0
20
40
60
80
100
0
-40
120
-20
0
Figure 7. Turn-On Rise Time
vs. Temperature
100
120
20
40
60
80
100
120
Figure 8. Turn-Off Fall Time
vs. Temperature
100
100
75
75
IQDD [A]
IQDD [A]
80
Temperature [°C]
Temperature [°C]
50
50
25
25
0
-40
60
30
20
-20
40
Figure 6. Turn-Off Propagation Delay
vs. Temperature
tF [ns]
tR [ns]
Figure 5. Turn-On Propagation Delay
vs. Temperature
0
-40
20
Temperature [°C]
Temperature [°C]
-20
0
20
40
60
80
100
0
-40
120
0
20
40
60
80
100
120
Temperature [°C]
Temperature [°C]
Figure 9. Quiescent VDD Supply Current
vs. Temperature
Figure 10. Quiescent VBS Supply Current
vs. Temperature
© 2009 Fairchild Semiconductor Corporation
FAN73711 • Rev. 1.0.1
-20
www.fairchildsemi.com
6
FAN73711 — High-Current, High-Side Gate Drive IC
Typical Characteristics
100
800
600
IPBS [A]
IPDD [A]
80
60
40
200
20
0
-40
400
-20
0
20
40
60
80
100
0
-40
120
-20
0
Temperature [°C]
Figure 11. Operating VDD Supply Current
vs. Temperature
40
60
80
100
120
Figure 12. Operating VBS Supply Current
vs. Temperature
10.0
9.5
9.0
VBSUV- [V]
9.5
VBSUV+ [V]
20
Temperature [°C]
9.0
8.5
8.0
8.5
7.5
8.0
-40
-20
0
20
40
60
80
100
7.0
-40
120
-20
0
Temperature [°C]
20
40
60
80
100
120
Temperature [°C]
Figure 13. VBS UVLO+ vs. Temperature
Figure 14. VBS UVLO- vs. Temperature
30
1.2
25
VOL [mV]
VOH [V]
0.9
0.6
20
15
10
0.3
5
0.0
-40
-20
0
20
40
60
80
100
0
-40
120
Temperature [°C]
0
20
40
60
80
100
120
Temperature [°C]
Figure 15. High-Level Output Voltage
vs. Temperature
Figure 16. Low-Level Output Voltage
vs. Temperature
© 2009 Fairchild Semiconductor Corporation
FAN73711 • Rev. 1.0.1
-20
www.fairchildsemi.com
7
FAN73711 — High-Current, High-Side Gate Drive IC
Typical Characteristics (Continued)
2.5
2.0
2.0
VIL [V]
VIH [V]
2.5
1.5
1.5
1.0
1.0
0.5
-40
-20
0
20
40
60
80
100
0.5
-40
120
-20
0
20
40
60
80
100
120
Temperature [°C]
Temperature [°C]
Figure 17. Logic High Input Voltage
vs. Temperature
Figure 18. Logic Low Input Voltage
vs. Temperature
-7
60
-8
40
VS [V]
IIN+ [A]
50
30
-9
-10
20
-11
10
0
-40
-20
0
20
40
60
80
100
-12
-40
120
Temperature [°C]
-20
0
20
40
60
80
100
120
Temperature [°C]
Figure 20. Allowable Negative VS Voltage
vs. Temperature
Figure 19. Logic Input High Bias Current
vs. Temperature
25
VSHUNT [V]
24
23
22
21
-40
-20
0
20
40
60
80
100
120
Temperature [°C]
Figure 21. Shunt Regulator Clamping Voltage
vs. Temperature
© 2009 Fairchild Semiconductor Corporation
FAN73711 • Rev. 1.0.1
www.fairchildsemi.com
8
FAN73711 — High-Current, High-Side Gate Drive IC
Typical Characteristics (Continued)
Timing Diagram
15V
50%
VDD
10nF
VB
10µF
10µF
0.1µF
15V
50%
IN
VS
GND
ton
tr
toff
tf
FAN73711
1000pF
90%
90%
HO
IN
OUT
10%
10%
FAN73711 Rev.01
Figure 22. Switching Time Test Circuit and Waveform Definitions
© 2009 Fairchild Semiconductor Corporation
FAN73711 • Rev. 1.0.1
www.fairchildsemi.com
9
FAN73711 — High-Current, High-Side Gate Drive IC
Switching Time Definitions
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Figure 23. 8-Lead Small Outline Package (SOP)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/.
© 2009 Fairchild Semiconductor Corporation
FAN73711 • Rev. 1.0.1
www.fairchildsemi.com
10
FAN73711 — High-Current, High-Side Gate Drive IC
Package Dimensions
FAN73711 — High-Current, High-Side Gate Drive IC
© 2009 Fairchild Semiconductor Corporation
FAN73711 • Rev. 1.0.1
www.fairchildsemi.com
11