MMBF4416A - N-Channel RF Amplifier

MMBF4416A
N-Channel RF Amplifier
Features
• This device is designed for RF amplifiers.
G
• Sourced from process 50.
S
SOT-23
D
Mark: 6BG
Ordering Information
Part Number
Top Mark
Package
Packing Method
MMBF4416A
6BG
SOT-23 3L
Tape and Reel
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Value
Unit
VDG
Drain-Gate Voltage
35
V
VGS
Gate-Source Voltage
-35
V
IGF
Forward Gate Current
10
mA
-55 to 150
°C
TJ, TSTG
Parameter
Operating and Storage Junction Temperature Range
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 2005 Fairchild Semiconductor Corporation
MMBF4416A Rev. 1.3
www.fairchildsemi.com
MMBF4416A — N-Channel RF Amplifier
June 2015
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
RθJA
Parameter
Max.
Unit
Total Device Dissipation
225
mW
Derate Above 25°C
1.8
mW/°C
Thermal Resistance, Junction-to-Ambient
556
°C/W
Note:
3. Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Max.
Unit
Off Characteristics
V(BR)GSS
IGSS
VGS(off)
VGS
Gate-Source Breakdown Voltage VDS = 0, IG = 1.0 μA
Gate Reverse Current
VGS = -20 V, VDS = 0
Gate-Source Cut-Off Voltage
VDS = 15 V, ID = 1.0 nA
Gate-Source Voltage
VDS = 15 V, ID = 500 μA
-35
V
-100
pA
-2.5
-6.0
V
-1.0
-5.5
V
5
15
mA
1
V
7500
μmhos
On Characteristics
IDSS
VGS(f)
Zero-Gate Voltage Drain Current
VDS = 15 V, VGS = 0
Gate-Source Forward Voltage
VDS = 0, IG = 1.0 mA
Small Signal Characteristics
gfs
Forward Transfer Conductance(4) VDS = 15 V, VGS = 0, f = 1.0 kHz
(4)
4500
gos
Output Conductance
VDS = 15 V, VGS = 0, f = 1.0 kHz
50
μmhos
Ciss
Input Capacitance
VDS = 15 V, VGS = 0, f = 1.0 MHz
4.0
pF
Crss
Reverse Transfer Capacitance
VDS = 15 V, VGS = 0, f = 1.0 MHz
0.8
pF
Coss
Output Capacitance
VDS = 15 V, VGS = 0, f = 1.0 MHz
2.0
pF
Noise Figure
VDS = 15 V, VGS = 0, ID = 5 mA,
Rg = 1 kΩ, f = 400 MHz
4.0
dB
NF
Note:
4. Pulse test: pulse width ≤ 300 ms, duty cycle ≤ 2%
© 2005 Fairchild Semiconductor Corporation
MMBF4416A Rev. 1.3
www.fairchildsemi.com
2
MMBF4416A — N-Channel RF Amplifier
Thermal Characteristics(3)
MMBF4416A — N-Channel RF Amplifier
Physical Dimensions
0.95
2.92±0.20
3
1.40
1.30+0.20
-0.15
1
2.20
2
0.60
0.37
(0.29)
0.95
0.20
1.00
A B
1.90
1.90
LAND PATTERN
RECOMMENDATION
SEE DETAIL A
1.20 MAX
0.10
0.00
(0.93)
0.10
C
C
2.40±0.30
NOTES: UNLESS OTHERWISE SPECIFIED
GAGE PLANE
0.23
0.08
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
0.25
0.20 MIN
(0.55)
SEATING
PLANE
SCALE: 2X
Figure 1. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE
© 2005 Fairchild Semiconductor Corporation
MMBF4416A Rev. 1.3
www.fairchildsemi.com
3
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I74
© Fairchild Semiconductor Corporation
www.fairchildsemi.com