FGB3040CS EcoSPARK 300mJ, 400V, N-Channel Current Sensing Ignition IGBT General Description Applications The FGB3040CS is an lgnition IGBT that offers outstanding SCIS capability along with a ratiometric emitter current sensing capability. This sensing is based on a emitter active area ratio of 200:1. The output is provided through a fourth (sense) lead. This signal provides a current level that is proportional to the main collector to emitter current. The effective ratio as measured on the sense lead is a function of the sense output, the collector current and the gate to emitter drive voltage. Smart Automotive lgnition Coil Driver Circuits ECU Based Systems Distributorless Based Systems Coil on Plug Based Systems Features SCIS Energy = 300mJ at TJ = 25oC Logic Level Gate Drive Qualified to AEC Q101 RoHS Compliant Package Symbol Device Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter BVCER Collector to Emitter Breakdown Voltage (IC = 2mA) Ratings 430 Units V BVECS Emitter to Collector Breakdown Voltage (IC = 1mA) (Reverse Battery Condition) 24 V ESCIS25 Self Clamping Inductive Switching Energy (at starting TJ = 25°C) 300 mJ mJ ESCIS150 Self Clamping Inductive Switching Energy (at starting TJ = 150°C) 170 IC25 Continuous Collector Current, at VGE = 4.0V, TC = 25°C 21 A IC110 Continuous Collector Current, at VGE = 4.0V, TC = 110°C 19 A VGEM Maximum Continuous Gate to Emitter Voltage ±10 V Power Dissipation, at TC = 25°C 150 W 1 W/oC PD Power Dissipation Derating, for TC > 25oC TJ Operating Junction Temperature Range -40 to 175 o TSTG Storage Junction Temperature Range -40 to 175 oC TL Max. Lead Temp. for Soldering (at 1.6mm from case for 10sec) 300 oC TPKG Max. Package Temp. for Soldering (Package Body for 10 sec) 260 oC ESD Electrostatic Discharge Voltage, HBM model (100pfd, 1500 ohms) 4 kV @2012 Fairchild Semiconductor Corporation FGB3040CS Rev. C 1 C www.fairchildsemi.com FGB3040CS 300mJ, 400V, N-Channel Current Sensing Ignition IGBT 2FWREHU 201 Device Marking 3040CS Device FGB3040CS Package TO-263 6 Lead Reel Size 300mm Tape Width 24mm Quantity 800 3040CS FGB3040CS TO-263 6 Lead Tube N/A 50 Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCER ICE = 2mA, VGE = 0, Collector to Emitter Breakdown Voltage RGE = 1KΩ, See Fig. 17 TJ = -40 to 150oC 370 410 430 V BVCES ICE = 10mA, VGE = 0V Collector to Emitter Breakdown Voltage RGE = 0, See Fig. 17 TJ = -40 to 150oC 390 430 450 V BVECS Emitter to Collector Breakdown Voltage ICE = -75mA, VGE = 0V, TC = 25°C 30 - - V BVGES Gate to Emitter Breakdown Voltage IGES = ±2mA ±12 ±14 - V IGEO Gate to Emitter Leakage Current VGE = ±10V - - ±9 μA ICES Collector to Emitter Leakage Current VCES = 250V, See Fig. 13 - - 25 μA TC = 150oC - - 1 mA IECS Emitter to Collector Leakage Current VEC = 24V, See Fig. 13 - - 1 TC = 150oC - - 40 R1 Series Gate Resistance - 100 - Ω TC = 25oC TC = 25oC mA On State Characteristics VCE(SAT) Collector to Emitter Saturation Voltage ICE = 6A, VGE = 4V TC = 25oC See Fig. 5 - 1.3 1.6 V VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10A, VGE = 4.5V TC = 150oC See Fig. 6 - 1.6 1.85 V - 1.8 2.35 V VCE = 5V, VGE = 5V - 37 - A - 15 - nC 1.3 1.6 2.2 0.75 1.1 1.8 VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15A, VGE = 4.5V ICE(ON) Collector to Emitter On State Current o TC = 150 C Dynamic Characteristics QG(ON) Gate Charge ICE = 10A, VCE = 12V, VGE = 5V, See Fig. 16 VGE(TH) Gate to Emitter Threshold Voltage ICE = 1mA, VCE = VGE See Fig. 12 VGEP Gate to Emitter Plateau Voltage ICE = 10A, VCE = 12V - 3.0 - V βAREA Emitter Sense Area Ratio Sense Area/Total Area - 1/200 - - β5Ω Emitter Current Sense Ratio ICE = 8.0A, VGE = 5V, RSENSE = 5 Ω - 230 - - β20Ω Emitter Current Sense Ratio ICE = 9.0A, VGE = 5V, RSENSE = 20 Ω 550 640 765 - - 0.6 4 μs - 1.5 7 μs - 4.7 15 μs - 2.6 15 μs TJ = 25°C, L = 3.0mHy, ICE = 14.2A, RG = 1k Ω, VGE = 5V, See Fig. 3&4 - - 300 mJ All Packages - - 1.0 oC/W TC = 25oC TC = 150oC V Switching Characteristics td(ON)R trR Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1Ω VGE = 5V, RG = 1KΩ Current Rise Time-Resistive TJ = 25°C, See Fig. 14 td(OFF)L Current Turn-Off Delay Time-Inductive VCE = 300V, L = 500μHy, VGE = 5V, RG = 1KΩ Current Fall Time-Inductive tfL TJ = 25°C, See Fig. 14 SCIS Self Clamped inductive Switching Thermal Characteristics RθJC Thermal Resistance Junction to Case FGB3040CS Rev. C 2 www.fairchildsemi.com FGB3040CS 300mJ, 400V, N-Channel Current Sensing Ignition IGBT Package Marking and Ordering Information 400 ICE = 18A 0.5 VSENSE, EMITTER SENSE VOLTAGE (mV) VSENSE, Emitter Sense Voltage (V) 0.6 o VGE = 5V, TJ = 25 C ICE = 15A ICE = 10A 300 ICE = 8A 0.4 0.3 ICE = 5A ICE = 3A ICE = 1A 200 ICE = 0.5A 0.2 100 0.1 0.0 1 10 100 1000 RSENSE, Emitter Sense Resistance (ohms) 35 RG = 1KΩ, VGE = 5V, VCE = 14V 30 25 o TJ = 25 C 20 15 o 10 TJ = 150 C 5 0 SCIS Curves valid for Vclamp Voltages of <430V 0 25 50 75 100 125 150 tCLP, TIME IN CLAMP (μS) 175 200 ICE = 6A VGE = 3.7V 1.32 VGE = 4.0V 1.28 1.24 1.20 VGE = 8V VGE = 5V VGE = 4.5V 1.16 1.12 -75 -50 -25 0 25 50 75 100 125 150 175 o TJ, JUNCTION TEMPERTURE ( C) Figure 5. Collector to Emitter On-State Voltage vs. Junction Temperature FGB3040CS Rev. C 0 2 4 6 8 10 12 14 16 18 20 ICE, COLLECTOR TO EMITTER CURRENT (A) 35 RG = 1KΩ, VGE = 5V, VCE = 14V 30 25 o TJ = 25 C 20 15 o 10 TJ = 150 C 5 0 SCIS Curves valid for Vclamp Voltages of <430V 0 2 4 6 L, INDUCTANCE (mHy) 8 10 Figure 4. Self Clamped Inductive Switching Current vs. Inductance VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 3. Self Clamped Inductive Switching Current vs. Time in Clamp 1.36 0 Figure 2. Emitter Sense Voltage vs. Collector to Emitter Current ISCIS, INDUCTIVE SWITCHING CURRENT (A) ISCIS, INDUCTIVE SWITCHING CURRENT (A) Figure 1. Emitter Sense Voltage vs. Emitter Sense Resistance VCE, COLLECTOR TO EMITTER VOLTAGE (V) o VGE = 5V, RSENSE = 5 ohms, TJ = 25 C 1.8 1.7 1.6 ICE = 10A VGE = 3.7V VGE = 4.0V 1.5 1.4 VGE = 4.5V 1.3 VGE = 5V VGE = 8V 1.2 -75 -50 -25 0 25 50 75 100 125 150 175 o TJ, JUNCTION TEMPERTURE ( C) Figure 6. Collector to Emitter On-State Voltage vs. Junction Temperature 3 www.fairchildsemi.com FGB3040CS 300mJ, 400V, N-Channel Current Sensing Ignition IGBT Typical Performance Curves ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) (Continued) 40 VGE = 8.0V VGE = 5.0V VGE = 4.5V 30 VGE = 4.0V VGE = 3.7V 20 10 o 0 TJ = -40 C 0 2 3 4 1 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 40 VGE = 8.0V VGE = 5.0V VGE = 4.5V 30 VGE = 4.0V VGE = 3.7V 20 10 o 0 TJ = 175 C 0 2 3 4 1 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VGE = 4.0V 20 15 10 5 0 25 50 75 100 125 150 o TC, CASE TEMPERATURE( C) 10 o 0 TJ = 25 C 0 40 2 3 4 1 VCE, COLLECTOR TO EMITTER VOLTAGE (V) PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX VCE = 5V 30 TJ = -40oC TJ = 25oC TJ = 175oC 20 10 0 0 2 3 4 5 1 VGE, GATE TO EMITTER VOLTAGE (V) 6 2.0 VCE = VGE ICE = 1mA 1.8 1.6 1.4 1.2 1.0 0.8 -50 175 Figure 11. DC Collector Current vs. Case Temperature FGB3040CS Rev. C 20 Figure 10. Transfer Characteristics VTH, THRESHOLD VOLTAGE (V) ICE, DC COLLECTOR CURRENT (A) Figure 9. Collector to Emitter On-State Voltage vs. Collector Current 25 VGE = 8.0V VGE = 5.0V VGE = 4.5V 30 VGE = 4.0V VGE = 3.7V Figure 8. Collector to Emitter On-State Voltage vs. Collector Current ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) Figure 7. Collector to Emitter On-State Voltage vs. Collector Current 40 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE(oC) Figure 12. Threshold Voltage vs. Junction Temperature 4 www.fairchildsemi.com FGB3040CS 300mJ, 400V, N-Channel Current Sensing Ignition IGBT Typical Performance Curves (Continued) 10000 12 ICE = 6.5A, VGE = 5V, RG = 1KΩ SWITCHING TIME (μS) LEAKAGE CURRENT (μA) VECS = 24V 1000 100 10 VCES = 300V 1 -25 Figure 13. Leakage Current vs. Junction Temperature VGS, GATE TO EMITTER VOLTAGE(V) CAPACITANCE (pF) f = 1MHz VGE = 0V CIES 800 400 CRES COES 0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 15. Capacitance vs. Collector to Emitter Voltage BVCER, BREAKDOWN VOLTAGE (V) Inductive tOFF 6 4 Resistive tON 50 75 100 125 150 o TJ, JUNCTION TEMPERATURE ( C) 175 Figure 14. Switching Time vs. Junction Temperature 2000 1200 8 0 25 0 25 50 75 100 125 150 175 o TJ, JUNCTION TEMPERATURE ( C) 1600 Resistive tOFF 2 VCES = 250V 0.1 -50 10 10 o ICE = 10A, TJ = 25 C 8 VCE = 6V 6 VCE = 12V 4 2 0 0 5 10 15 20 25 Qg, GATE CHARGE(nC) 30 35 Figure 16. Gate Charge 415 ICER = 10mA o TJ = -40 C 410 o 405 TJ = 25 C o TJ = 175 C 400 395 10 100 RG, SERIES GATE RESISTANCE (Ω) 1000 6000 Figure 17. Break 'own Voltage vs. Series Gate Resistance FGB3040CS Rev. C 5 www.fairchildsemi.com FGB3040CS 300mJ, 400V, N-Channel Current Sensing Ignition IGBT Typical Performance Curves NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 0.1 DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 1E-3 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 1 10 10 Figure 18. IGBT Normalized Transient Thermal Impedance, Junction to Case FGB3040CS Rev. C1 6 www.fairchildsemi.com FGB3040CS 300mJ, 400V, N-Channel Current Sensing Ignition IGBT Typical Performance Curves FGB3040CS 300mJ, 400V, N-Channel Current Sensing Ignition IGBT Test Circuit and Waveforms BVCER FGB3040CS Rev. C 7 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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