FDY6342L Integrated Load Switch

FDY6342L
tm
Integrated Load Switch
Features
General Description
„ Max rDS(on) = 0.5 Ω at VGS = 4.5 V, ID = –0.83 A
This device is particularly suited for compact power
management in portable electronic equipment where 2.5 V to
8 V input and 0.83 A output current capability are needed. This
load switch integrates a small N-Channel power MOSFET (Q1)
that drives a large P-Channel power MOSFET (Q2) in one tiny
SC89-6 package.
„ Max rDS(on) = 0.7 Ω at VGS = 2.5 V, ID = –0.70 A
„ Max rDS(on) = 1.2 Ω at VGS = 1.8 V, ID = –0.43 A
„ Max rDS(on) = 1.8 Ω at VGS = 1.5 V, ID = –0.36 A
„ Control MOSFET (Q1) includes Zener protection for ESD
ruggedness (>4 kV Human body model)
Applications
„ High performance trench technology for extremely low rDS(on)
„ Power management
„ Compact industry standard SC89-6 surface mount package
„ Load switch
„ RoHS Compliant
Q2
6
Vin,R1
5
4
3
Vout,C1
5
2
NC
1
R2
4
ON/OFF
Equivalent Circuit
IN
VDROP
OUT
Q1
1
R1,C1
2
6
ON/OFF
SC89-6
3
See Application Circuit
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
Parameter
VIN
Gate to Source Voltage (Q2)
VON/OFF
Gate to Source Voltage (Q1)
ILoad
PD
TJ, TSTG
Load Current
Ratings
±8
Units
V
–0.5 to 8
V
-Continuous
(Note 2)
0.83
-Pulsed
(Note 2)
1.0
Power Dissipation
(Note 1a)
0.625
Power Dissipation
(Note 1b)
0.446
Operating and Storage Junction Temperature Range
–55 to +150
A
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
200
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
280
°C/W
Package Marking and Ordering Information
Device Marking
H
Device
FDY6342L
©2008 Fairchild Semiconductor Corporation
FDY6342L Rev.B2
Package
SC89-6
1
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
www.fairchildsemi.com
FDY6342L Integrated Load Switch
November 2014
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
–1
µA
Off Characteristics
BVIN
VIN Breakdown Voltage
ID = –250 µA, VON/OFF = 0 V
ILoad
Zero Gate Voltage Drain Current
VIN = –6.4 V, VON/OFF = 0 V
IFL
Leakage Current, Forward
VIN = 8 V, VON/OFF = 0 V
10
µA
IRL
Leakage Current, Reverse
VIN = –8 V, VON/OFF = 0 V
–10
µA
0.85
1.5
V
0.28
0.5
8
V
On Characteristics (note 2)
VON/OFF(th)
VIN = VON/OFF, ID = –250 µA
Gate Threshold Voltage
VIN = 4.5 V, ID = –0.83 A
rDS(on)
Static Drain to Source On Resistance (Q2)
Static Drain to Source On Resistance (Q1)
0.65
VIN = 2.5 V, ID = –0.70 A
0.35
0.7
VIN = 1.8 V, ID = –0.43 A
0.45
1.2
VIN = 1.5 V, ID = –0.36 A
0.57
1.8
VIN = 4.5 V, ID = 0.4 A
2.9
4.0
VIN = 2.7 V, ID = 0.2 A
3.5
5.0
Ω
Ω
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
VSD
Source to Drain Diode Forward Voltage
VON/OFF = 0 V, IS = –0.25 A (Note 2)
–0.8
–0.25
A
–1.2
V
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by
the user's board design.
a)200 oC/W when mounted on
a 1 in2 pad of 2 oz copper.
b)280 oC/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
FDY6342L Load Switch Application circuit
Q2
IN
OUT
C1
R1
Q1
LOAD
ON/OFF
R2
External Component Recommendation:
For additional in-rush current control, R2 and C1 can be added. For more information, see application note AN1030
©2008 Fairchild Semiconductor Corporation
FDY6342L Rev.B2
2
www.fairchildsemi.com
FDY6342L Integrated Load Switch
Electrical Characteristics TJ = 25 °C unless otherwise noted
0.5
0.5
VIN = -1.5 V
VON/OFF = 1.5-8 V
0.4
PW = 300 µs, D < 2%
0.3
-VDROP, (V)
-VDROP, (V)
VIN = -1.8 V
VON/OFF = 1.5-8 V
0.4
TJ = 125 oC
0.2
PW = 300 µs, D < 2%
0.3
TJ = 125 oC
0.2
TJ = 25 oC
0.1
TJ = 25 oC
0.1
0.0
0.0
0.2
0.4
0.6
0.0
0.0
0.8
0.2
0.4
-IL, (A)
Figure 1. Conduction Voltage Drop
Variation with Load Current
1.0
0.5
VIN = -2.5 V
VIN = -4.5 V
VON/OFF = 1.5-8 V
0.4
VON/OFF = 1.5-8 V
0.4
PW = 300 µs, D < 2%
0.3
-VDROP, (V)
-VDROP, (V)
0.8
Figure 2. Conduction Voltage Drop
Variation with Load Current
0.5
TJ = 125 oC
0.2
PW = 300 µs, D < 2%
0.3
TJ = 125 oC
0.2
TJ = 25 oC
TJ = 25 oC
0.1
0.1
0.0
0.0
0.4
0.8
1.2
0.0
0.0
1.6
0.4
0.8
Figure 3. Conduction Voltage Drop
Variation with Load Current
0.8
0.8
rDS(on), ON-RESISTANCE (Ω)
1.0
TJ = 125 oC
TJ = 25 oC
0.4
0.2
IL = -0.7A
VON/OFF = 1.5-8 V
PW = 300 µs, D < 2%
0.0
1.0
1.5
2.0
2.5
2.0
3.0
3.5
TJ = 125 oC
0.6
TJ = 25 oC
0.4
IL = -0.83 A
0.2
VON/OFF = 1.5-8 V
PW = 300 µs, D < 2%
0.0
1.0
4.0
-VIN, INPUT VOLTAGE (A)
1.5
2.0
2.5
3.0
3.5
4.0
-VIN, INPUT VOLTAGE (A)
Figure 5. On- Resistance Variaton
with Input Current
©2008 Fairchild Semiconductor Corporation
FDY6342L Rev.B2
1.6
Figure 4. Conduction Voltage Drop
Variation with Load Current
1.0
0.6
1.2
-IL (A)
-IL (A)
rDS(on), ON-RESISTANCE (Ω)
0.6
-IL, (A)
Figure 6. On- Resistance Variaton
with Input Current
3
www.fairchildsemi.com
FDY6342L Integrated Load Switch
Typical Characteristics TJ = 25 °C unless otherwise noted
FDY6342L Integrated Load Switch
Dimensional Outline and Pad Layout
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the draw ing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconduc tor’s online packaging area for the most recent package drawings:
https://www.fairchildsemi.com/evaluate/package-specifications/packageDetails.html?id=PN_NMADA-006
©2008 Fairchild Semiconductor Corporation
FDY6342L Rev.B2
4
www.fairchildsemi.com
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Definition
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Formative / In Design
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First Production
Datasheet contains preliminary data; supplementary data will be published at a later
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Semiconductor. The datasheet is for reference information only.
Rev. I72
©2008 Fairchild Semiconductor Corporation
FDY6342L Rev.B2
5
www.fairchildsemi.com
FDY6342L Integrated Load Switch
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