MMBT3646 NPN Switching Transistor Features 3 • NPN High Speed Switching Transistor • Process 22 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Top Mark Package Packing Method MMBT3646 23 SOT-23 3L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. Symbol Value Unit VCEO Collector-Emitter Voltage 15 V VCES Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5 V IC TJ, TSTG Parameter Collector Current (DC) - Continuous Operating and Storage Junction Temperature Range 300 mA -55 to 150 °C Value Unit 625 mW 5 mW/°C 200 °C/W Thermal Characteristics(1) Values are at TC = 25°C unless otherwise noted. Symbol PD RθJA Parameter Total Device Dissipation at TA = 25°C Derate Above 25°C Thermal Resistance, Junction to Ambient Note: 1. PCB size: FR-4 trace width is 50 mil / 25 mil /15 mil, thickness: 2 OZ, minimum land pattern size. © 2002 Fairchild Semiconductor Corporation MMBT3646 Rev. 1.1.0 www.fairchildsemi.com 1 MMBT3646 — NPN Switching Transistor December 2013 Values are at TC = 25°C unless otherwise noted. Symbol Parameter V(BR)CES Collector-Emitter Breakdown Voltage IC = 100 μA, VBE = 0 40 V Collector-Emitter Sustaining Voltage(2) IC = 10 mA, IB = 0 15 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 μA, IE = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 μA, IC = 0 5 VCEO(SUS) ICES hFE VCE(sat) Collector Cut-Off Current DC Current Gain (2) Collector-Emitter Saturation Voltage(2) Conditions Base-Emitter Saturation Voltage(2) 3.0 VCE = 0.4 V, IC = 30 mA 30 VCE = 0.5 V, IC = 100 mA 25 VCE = 1.0 V, IC = 300 mA 15 IC = 30 mA, IB = 3 mA 0.20 0.28 IC = 300 mA, IB = 30 mA 0.50 IC = 30 mA, IB = 3 mA, TA =65°C 0.30 1.20 IC = 300 mA, IB = 30 mA 1.70 Cib Input Capacitance VEB = 0.5 V, IC = 0, f = 1MHz ton Turn-On Time td Delay Time tr Rise Time Turn-Off Time Fall Time ts Storage Time VCC = 10 V, IC = 300 mA, IB1 = 30 mA, VCE(off) = 3 V VCC = 10 V, IC = 300 mA, IB1 = IB2 = 30 mA V 0.95 IC = 100 mA, IB = 10 mA Output Capacitance μA 120 IC = 100 mA, IB = 10 mA 0.73 Unit V VCE = 20 V, VBE = 0, TA = 65°C Cob tf Max. 0.5 VCE = 5 V, IE = 0, f = 1MHz toff Typ. VCE = 20 V, VBE = 0 IC = 30 mA, IB = 3 mA VBE(sat) Min. V 5 pF 8 pF 18 ns 10 ns 15 ns 28 ns 15 ns 20 ns Note: 2. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. © 2002 Fairchild Semiconductor Corporation MMBT3646 Rev. 1.1.0 www.fairchildsemi.com 2 MMBT3646 — NPN Switching Transistor Electrical Characteristics MMBT3646 — NPN Switching Transistor Physical Dimensions SOT-23 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 0.25 0.20 MIN (0.55) SEATING PLANE SCALE: 2X Figure 1. 3-LEAD, SOT-23, JEDEC TO-236, LOW PROFILE (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MA/MA03D.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-MA03D.pdf. © 2002 Fairchild Semiconductor Corporation MMBT3646 Rev. 1.1.0 www.fairchildsemi.com 3 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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