J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch Description This device is designed for low-level analog switching sample-and-hold circuits and chopper-stabilized amplifiers. Sourced from process 88. G TO-92 12 1 3 Straight Lead Bulk Packing 2 1. Drain 2. Gate 3. Source 3 S SOT-23 D Mark: 6W / 6X / 6Y Note: Source & drain are interchangeable. Bent Lead Tape & Reel Ammo Packing Figure 1. J175 / J176 Device Package Figure 2. MMBFJ175 / 176 / 177 Device Package Ordering Information Part Number Marking Package Packing Method J175_D26Z J175 TO-92 3L Tape and Reel J176_D74Z J176 TO-92 3L Ammo MMBFJ175 6W SOT-23 3L Tape and Reel MMBFJ176 6X SOT-23 3L Tape and Reel MMBFJ177 6Y SOT-23 3L Tape and Reel ©1997 Fairchild Semiconductor Corporation J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 Rev. 1.6 www.fairchildsemi.com J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch September 2015 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Parameter Symbol Value Unit VDG Drain-Gate Voltage -30 V VGS Gate-Source Voltage 30 V IGF Forward Gate Current 50 mA -55 to + 150 °C TJ, TSTG Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations. Thermal Characteristics Values are at TA = 25°C unless otherwise noted. Max. Symbol PD Parameter Total Device Dissipation J175 / J176 (3) MMBFJ175 / MMBFJ176 / MMBFJ177 (3) Unit 350 225 mW 1.8 mW/°C Derate Above 25°C 2.8 RθJC Thermal Resistance, Junction to Case 125 RθJA Thermal Resistance, Junction to Ambient 357 °C/W 556 °C/W Note: 3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. © 1997 Fairchild Semiconductor Corporation J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 Rev. 1.6 www.fairchildsemi.com 2 J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch Absolute Maximum Ratings(1),(2) Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit Off Characteristics V(BR)GSS IGSS VGS(off) Gate-Source Breakdown Voltage IG = 1.0 μA, VDS = 0 Gate Reverse Current VGS = 20 V, VDS = 0 Gate-Source Cut-Off Voltage 30 V 1.0 J175 / MMBFJ175 3.0 6.0 VDS = -15 V, ID = -10 nA J176 / MMBFJ176 1.0 4.0 MMBFJ177 0.8 2.5 J175 / MMBFJ175 -7.0 -60.0 J176 / MMBFJ176 -2.0 -25.0 MMBFJ177 -1.5 -20.0 nA V On Characteristics IDSS rDS(on) Zero-Gate Voltage Drain Current(4) VDS = -15 V, IGS = 0 Drain-Source On Resistance VDS ≤ 0.1 V, VGS = 0 J175 / MMBFJ175 125 J176 / MMBFJ176 250 MMBFJ177 300 mA Ω Note: 4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. © 1997 Fairchild Semiconductor Corporation J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 Rev. 1.6 www.fairchildsemi.com 3 J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch Electrical Characteristics - TRANSCONDUCTANCE (mmhos) - DRAIN CURRENT (mA) 0.5 V V GS = 0 V -12 1.0 V 1.5 V -8 -4 2.5 V 3.0 V 3.5 V 0 -1 -2 -3 -4 VDS - DRAIN-SOURCE VOLTAGE (V) -5 100 50 I DSS , g fs @ V DS = 15V, V GS = 0 PULSED r DS @ -100 mV, VGS = 0 V GS(off) @ V DS = - 15V, I D = - 1.0 μA 1 1 V GS (OFF) 16 - DRAIN CURRENT (mA) V GS(off) = - 4.5 V -24 - 55°C 25°C 125°C VGS(off) = 2.5 V -16 - 55°C 25°C 125°C VGS(off) = - 4.5 V - 55°C 25°C 125°C VGS(off) = 2.5 V 12 8 - 55°C 25°C 125°C 4 D -8 V DS = - 15 V I I D - DRAIN CURRENT (mA) 10 2 5 10 - GATE CUTOFF VOLTAGE (V) Figure 4. Parameter Interactions V DS = - 15 V 0 0 1 2 3 VGS - GATE-SOURCE VOLTAGE (V) 0 4 0 g os - OUTPUT CONDUCTANCE ( μ mhos) 20 10 4 1000 100 50 1 2 3 VGS - GATE-SOURCE VOLTAGE (V) Figure 6. Transfer Characteristics Figure 5. Transfer Characteristics - NORMALIZED RESISTANCE ( Ω ) fs 5 -32 V GS(off) @ 5.0V, 10 μA r DS r DS = V GS 1 -________ V GS(off) 5 2 DS g 10 Figure 3. Common Drain-Source r 500 I DSS r DS g 0 50 fs I D 2.0 V 1,000 - DRAIN "ON" RESISTANCE (Ω Ω) -16 100 DS T A = 25°C TYP V GS(off) = 4.5 V r -20 1 0 0.2 0.4 0.6 0.8 1 VGS /VGS(off) - NORMALIZED GATE-SOURCE VOLTAGE (V) -5.0V 100 -5.0V -10V V GS(off) = - 4.5V -20V -20V -10V 10 V GS(off) = - 2.5V _ 1 0.01 _ _ 0.1 1 I D - DRAIN CURRENT (mA) _ 10 Figure 8. Output Conductance vs. Drain Current Figure 7. Normalized Drain Resistance vs. Bias Voltage © 1997 Fairchild Semiconductor Corporation J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 Rev. 1.6 f = 1.0 kHz www.fairchildsemi.com 4 J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch Typical Performance Characteristics C is (C rs ) - CAPACITANCE (pF) g fs - TRANSCONDUCTANCE (mmhos) 100 10 V GS(off) = 2.5V 5 25°C V GS(off) = 6.0V - 55°C 25°C 125°C 1 0.5 V DG = -15V f = 1.0 kHz 0.1 _ 0.1 _ _ 1 10 I D - DRAIN CURRENT (mA) _ 100 f = 0.1 - 1.0 MHz C is (V DS = -15V) 10 5 1 C rs (V DS = -15V) 0 r DS - DRAIN "ON" RESISTANCE (Ω) e n - NOISE VOLTAGE (nV / √ Hz) 100 50 I D = - 0.2 mA I D = 5.0 mA 5 V DG = - 15V BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.2f @ f ≥ 1.0 kHz 1 0.01 0.1 1 10 f - FREQUENCY (kHz) 100 1000 500 V DS = -100 mV V GS(off) = 2.5V V GS = 0 V GS(off) = 4.5V V GS(off) = 8.0V 100 50 10 -50 0 50 100 150 T A - AMBIENT TEMPERATURE ( o C) Figure 12. Channel Resistance vs. Temperature Figure 11. Noise Voltage vs. Frequency PD - POWER DISSIPATION (mW) 20 Figure 10. Capacitance vs. Voltage Figure 9. Transconductance vs. Drain Current 10 4 8 12 16 V GS - GATE-SOURCE VOLTAGE (V) 350 300 TO-92 250 200 150 SOT-23 100 50 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 Figure 13. Power Dissipation vs. Ambient Temperature © 1997 Fairchild Semiconductor Corporation J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 Rev. 1.6 www.fairchildsemi.com 5 J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch Typical Performance Characteristics (Continued) J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch Physical Dimensions Figure 14. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form © 1997 Fairchild Semiconductor Corporation J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 Rev. 1.6 www.fairchildsemi.com 6 J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch Physical Dimensions (Continued) 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 0.25 0.20 MIN (0.55) SEATING PLANE SCALE: 2X Figure 15. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE © 1997 Fairchild Semiconductor Corporation J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 Rev. 1.6 www.fairchildsemi.com 7 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I77 © Fairchild Semiconductor Corporation www.fairchildsemi.com