FDC655BN tm Single N-Channel, Logic Level, PowerTrench® MOSFET 30 V, 6.3 A, 25 mΩ Features General Description Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 6.3 A This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 33 mΩ at VGS = 4.5 V, ID = 5.5 A Fast switching Low gate charge These devices are well suited for low voltage and battery powered applicatoins where low in-line power loss and fast switching are required. High performance trchnology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant D D D D G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage -Continuous ID TA = 25°C (Note 1a) -Pulsed PD TJ, TSTG Ratings 30 Units V ±20 V 6.3 20 Power Dissipation ( Note 1a) 1.6 Power Dissipation (Note 1b) 0.8 Operating and Storage Junction Temperature Range A W -55 to + 150 °C 78 °C/W Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) Package Marking and Ordering Information Device Marking .55B Device FDC655BN ©2010 Fairchild Semiconductor Corporation FDC655BN Rev.C2 Package SSOT-6TM 1 Reel Size 7 ’’ Tape Width 8 mm Quantity 3000 units www.fairchildsemi.com FDC655BN Single N-Channel, Logic Level, PowerTrench® MOSFET January 2010 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 3 V 30 V 25 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 µA, referenced to 25°C VGS = 10 V, ID = 6.3 A 21 25 rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 5.5 A 26 33 VGS = 10 V, ID = 6.3 A, TJ = 125°C 30 36 VDS = 10 V, ID = 6.3 A 35 gFS Forward Transconductance 1 1.9 -5 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1MHz 470 620 pF 100 130 pF 60 90 pF Ω 3.0 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0 V to 10 V Qg Total Gate Charge VGS = 0 V to 5 V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω VDD = 15 V, ID = 6.3 A 6 11 ns 2 10 ns 15 26 ns 2 10 ns 9 13 nC 5 7 nC 1.4 nC 1.6 nC Drain-Source Diode Characteristics IS Maximum Continuous Drain-Source Diode Forward Current VSD Source-Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 1.3 A 1.3 (Note 2) IF = 6.3 A, di/dt = 100 A/µs A 0.8 1.2 V 15 26 ns 4 10 nC Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design. a. 78 °C/W when mounted on a 1 in2 pad of 2 oz copper on FR-4 board. b. 156 °C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width<300 us, Duty Cycle<2.0%. ©2010 Fairchild Semiconductor Corporation FDC655BN Rev.C2 2 www.fairchildsemi.com FDC655BN Single N-Channel, Logic Level, PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted VGS = 10 V VGS = 6 V VGS = 4.5 V ID, DRAIN CURRENT (A) 16 5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 20 VGS = 3.5 V 12 8 VGS = 3 V 4 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 4 VGS = 3 V 3 VGS = 3.5 V 2 VGS = 4.5 V 1 0 0 0 0.5 1.0 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 2.0 8 rDS(on), DRAIN TO 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) 90 ID = 6.3 A VGS = 10 V 1.4 12 16 20 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 4 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 80 ID = 6.3 A 70 60 50 TJ = 125 oC 40 30 20 TJ = 25 oC 10 100 125 150 2 TJ, JUNCTION TEMPERATURE (oC) 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 100 20 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 16 ID, DRAIN CURRENT (A) VGS = 10 V VGS = 6 V VDS = 5 V 12 TJ = 150 oC 8 TJ = 25 oC 4 TJ = -55 oC 0 1.0 1.5 2.0 2.5 3.0 3.5 10 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.2 4.0 VGS, GATE TO SOURCE VOLTAGE (V) 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDC655BN Rev.C2 VGS = 0 V Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDC655BN Single N-Channel, Logic Level, PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 1000 VGS, GATE TO SOURCE VOLTAGE (V) 10 ID = 6.3 A Ciss CAPACITANCE (pF) 8 VDD = 10 V 6 VDD = 15 V 4 VDD = 20 V Coss 100 Crss 2 f = 1 MHz VGS = 0 V 10 0.1 0 0 2 4 6 8 10 1 Figure 7. Gate Charge Characteristics 1000 P(PK), PEAK TRANSIENT POWER (W) THIS AREA IS LIMITED BY rDS(on) ID, DRAIN CURRENT (A) 30 Figure 8. Capacitance vs Drain to Source Voltage 100 10 1 ms 1 10 ms 100 ms SINGLE PULSE TJ = MAX RATED 0.1 1s Rθ JA = 156 oC/W 10 s DC TA = 25 oC 0.01 0.01 0.1 1 10 100 VGS = 10 V 100 SINGLE PULSE RθJA = 156 oC/W 10 TA = 25 oC 1 0.1 -4 10 -3 10 VDS, DRAIN to SOURCE VOLTAGE (V) 2 1 0.1 -2 10 -1 10 1 100 10 1000 t, PULSE WIDTH (sec) Figure 9. Forward Bias Safe Operating Area NORMALIZED THERMAL IMPEDANCE, ZθJA 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 10. Single Pulse Maximum Power Dissipation DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 156 C/W 0.001 0.0003 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 11. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDC655BN Rev.C2 4 www.fairchildsemi.com FDC655BN Single N-Channel, Logic Level, PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. 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