FGB3440G2_F085 / FGD3440G2_F085 FGP3440G2_F085 EcoSPARK®2 335mJ, 400V, N-Channel Ignition IGBT Features Applications o SCIS Energy = 335mJ at TJ = 25 C Automotive lgnition Coil Driver Circuits Logic Level Gate Drive Coil On Plug Applications Qualified to AEC Q101 RoHS Compliant Package Symbol JEDEC TO-263AB D²-Pak JEDEC TO-220AB E C G COLLECTOR G E R1 GATE JEDEC TO-252AA D-Pak R2 G E EMITTER COLLECTOR (FLANGE) Device Maximum Ratings TA = 25°C unless otherwise noted Parameter Symbol BVCER Collector to Emitter Breakdown Voltage (IC = 1mA) Ratings 400 Units V BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA) 28 V ESCIS25 Self Clamping Inductive Switching Energy (Note 1) 335 mJ 195 mJ ESCIS150 Self Clamping Inductive Switching Energy (Note 2) IC25 Collector Current Continuous, at VGE = 4.0V, TC = 25°C 26.9 A IC110 Collector Current Continuous, at VGE = 4.0V, TC = 110°C 25 A VGEM Gate to Emitter Voltage Continuous ±10 V Power Dissipation Total, at TC = 25°C 166 W 1.1 W/oC PD Power Dissipation Derating, for TC > 25oC TJ Operating Junction Temperature Range -40 to +175 o C TSTG Storage Junction Temperature Range -40 to +175 o C TL Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s) 300 o C TPKG Max. Lead Temp. for Soldering (Package Body for 10s) 260 o C ESD Electrostatic Discharge Voltage at100pF, 1500Ω @2014 Fairchild Semiconductor Corporation FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3 4 1 kV www.fairchildsemi.com FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 May 2014 Device Marking Device Package FGB3440G2 FGB3440G2_F085 FGD3440G2 FGD3440G2_F085 TO-263AB TO-252AA FGP3440G2 FGP3440G2_F085 TO-220AB Reel Size 330mm Tape Width 24mm 800 330mm 16mm N/A 2500 50 Tube Quantity Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCER ICE = 2mA, VGE = 0, Collector to Emitter Breakdown Voltage RGE = 1KΩ, TJ = -40 to 150oC 370 400 430 V BVCES ICE = 10mA, VGE = 0V, Collector to Emitter Breakdown Voltage RGE = 0, TJ = -40 to 150oC 390 420 450 V BVECS Emitter to Collector Breakdown Voltage ICE = -20mA, VGE = 0V, TJ = 25°C 28 - - V BVGES Gate to Emitter Breakdown Voltage IGES = ±2mA ±12 ±14 - V Collector to Emitter Leakage Current VCE = 250V, RGE=1KΩ - - 25 μA - - 1 mA IECS Emitter to Collector Leakage Current VEC = 24V, - - 1 - - 40 R1 Series Gate Resistance R2 Gate to Emitter Resistance ICER TJ = 25oC TJ = 150oC TJ = 25oC TJ = 150oC mA - 120 - Ω 10K - 30K Ω - 1.1 1.2 V - 1.3 1.45 V - 1.6 1.75 V - - 335 mJ On State Characteristics VCE(SAT) Collector to Emitter Saturation Voltage ICE = 6A, VGE = 4V, VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10A, VGE = 4.5V, VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15A, VGE = 4.5V, L = 3.0 mHy, VGE = 5V Self Clamped Inductive Switching ESCIS RG = 1KΩ, (Note 1) TJ = 25oC TJ = 150oC TJ = 150oC o TJ = 25 C Notes: 1: Self Clamping Inductive Switching Energy(ESCIS25) of 335mJ is based on the test conditions that is starting TJ=25 oC; L=3mHy, ISCIS=15A,VCC=100V during inductor charging and VCC=0V during the time in clamp . 2: Self Clamping Inductive Switching Energy (ESCIS150) of 195mJ is based on the test conditions that is starting TJ=150 oC; L=3mHy, ISCIS=11.4A,VCC=100V during inductor charging and VCC=0V during the time in clamp. @2014 Fairchild Semiconductor Corporation FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3 2 www.fairchildsemi.com FFGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Package Marking and Ordering Information Symbol Parameter Test Conditions Min Typ - 24 Max Units Dynamic Characteristics QG(ON) Gate Charge ICE = 10A, VCE = 12V, VGE = 5V o nC 1.3 1.7 2.2 0.75 1.2 1.8 VCE = 12V, ICE = 10A - 2.8 - V Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1Ω VGE = 5V, RG = 1KΩ Current Rise Time-Resistive TJ = 25oC, - 1.0 4 μs - 2.0 7 μs - 5.3 15 μs - 2.3 15 μs - - 0.9 oC/W VGE(TH) Gate to Emitter Threshold Voltage ICE = 1mA, VCE = VGE, VGEP Gate to Emitter Plateau Voltage TJ = 25 C - TJ = 150oC V Switching Characteristics td(ON)R trR td(OFF)L tfL Current Turn-Off Delay Time-Inductive VCE = 300V, L = 1mH, VGE = 5V, RG = 1KΩ Current Fall Time-Inductive ICE =6.5A, TJ = 25oC, Thermal Characteristics RθJC Thermal Resistance Junction to Case @2014 Fairchild Semiconductor Corporation FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3 3 www.fairchildsemi.com FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Electrical Characteristics TA = 25°C unless otherwise noted ISCIS, INDUCTIVE SWITCHING CURRENT (A) ISCIS, INDUCTIVE SWITCHING CURRENT (A) 100 RG = 1KΩ, VGE = 5V, VCE = 100V o TJ = 25 C 10 o TJ = 150 C 1 10 SCIS Curves valid for Vclamp Voltages of <430V 100 tCLP, TIME IN CLAMP (μS) 1000 1.20 10 o TJ = 150 C 0 SCIS Curves valid for Vclamp Voltages of <430V 0 6 9 L, INDUCTANCE (mHy) 12 15 ICE = 10A 1.40 VGE = 4.0V VGE = 3.7V 1.35 1.30 VGE = 8V 1.25 VGE = 5V 1.05 1.10 -75 -50 -25 0 25 50 75 100 125 150 175 o TJ, JUNCTION TEMPERTURE ( C) Figure 3. Collector to Emitter On-State Voltage vs. Junction Temperature ICE, COLLECTOR TO EMITTER CURRENT (A) Figure 4. Collector to Emitter On-State Voltage vs. Junction Temperature 30 VGE = 8.0V VGE = 5.0V VGE = 4.5V VGE = 4.0V 20 VGE = 3.7V 10 o TJ = -40 C 1 2 3 4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. Collector to Emitter On-State Voltage vs. Collector Current @2014 Fairchild Semiconductor Corporation FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3 VGE = 4.5V VGE = 8V 1.15 1.00 -75 -50 -25 0 25 50 75 100 125 150 175 o TJ, JUNCTION TEMPERTURE ( C) 0 VGE = 5V 1.20 VGE = 4.5V 0 3 1.45 1.10 ICE, COLLECTOR TO EMITTER CURRENT (A) o TJ = 25 C 1.50 VGE = 4.0V 1.15 20 Figure 2. Self Clamped Inductive Switching Current vs. Inductance ICE = 6A VGE = 3.7V RG = 1KΩ, VGE = 5V, VCE = 100V VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 1. Self Clamped Inductive Switching Current vs. Time in Clamp 30 30 VGE = 8.0V VGE = 5.0V VGE = 4.5V VGE = 4.0V 20 VGE = 3.7V 10 o 0 TJ = 25 C 0 1 2 3 4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 6. Collector to Emitter On-State Voltage vs. Collector Current 4 www.fairchildsemi.com FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Typical Performance Curves ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) (Continued) 30 VGE = 8.0V VGE = 5.0V VGE = 4.5V VGE = 4.0V 20 VGE = 3.7V 10 o 0 TJ = 175 C 0 1 2 3 4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 30 VCE = 5V 20 TJ = 25oC TJ = -40oC 0 VTH, THRESHOLD VOLTAGE (V) ICE, DC COLLECTOR CURRENT (A) 20 10 50 75 100 125 150 o TC, CASE TEMPERATURE( C) 1 2 3 VGE, GATE TO EMITTER VOLTAGE (V) 2.0 VCE = VGE ICE = 1mA 1.8 1.6 1.4 1.2 1.0 -50 175 Figure 9. DC Collector Current vs. Case Temperature -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE(oC) Figure 10. Threshold Voltage vs. Junction Temperature 10000 12 VECS = 24V SWITCHING TIME (μS) LEAKAGE CURRENT (μA) ICE = 6.5A, VGE = 5V, RG = 1KΩ 1000 100 10 VCES = 300V 1 8 4 0 25 0 25 50 75 100 125 150 175 o TJ, JUNCTION TEMPERATURE ( C) Figure 11. Leakage Current vs. Junction Temperature @2014 Fairchild Semiconductor Corporation FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3 Inductive tOFF 6 2 -25 Resistive tOFF 10 VCES = 250V 0.1 -50 4 Figure 8. Transfer Characteristics VGE = 4.0V 0 25 TJ = 175oC 10 Figure 7. Collector to Emitter On-State Voltage vs. Collector Current 30 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX Resistive tON 50 75 100 125 150 o TJ, JUNCTION TEMPERATURE ( C) 175 Figure 12. Switching Time vs. Junction Temperature 5 www.fairchildsemi.com FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Typical Performance Curves VGS, GATE TO EMITTER VOLTAGE(V) (Continued) CAPACITANCE (pF) 2000 f = 1MHz VGE = 0V 1600 CIES 1200 800 CRES 400 0 COES 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 25 10 o ICE = 10A, TJ = 25 C 8 VCE = 6V 6 VCE = 12V 4 2 0 0 10 BVCER, BREAKDOWN VOLTAGE (V) Figure 13. Capacitance vs. Collector to Emitter Voltage 20 30 40 50 Qg, GATE CHARGE(nC) 60 70 Figure 14. Gate Charge 440 ICER = 10mA 420 o TJ = -40 C o TJ = 25 C 400 o TJ = 175 C 380 10 100 RG, SERIES GATE RESISTANCE (Ω) 1000 6000 Figure 15. Break down Voltage vs. Series Gate Resistance 2 DUTY CYCLE - DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJC 1 D = 0.50 0.2 PDM 0.1 0.1 0.01 -5 10 0.05 t1 0.02 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC 0.01 SINGLE PULSE -4 10 -3 -2 10 10 t, RECTANGULAR PULSE DURATION(s) -1 10 1 Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case @2014 Fairchild Semiconductor Corporation FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3 6 www.fairchildsemi.com FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Typical Performance Curves L VCC R or L C PULSE GEN RG G LOAD C RG = 1KΩ DUT G + DUT 5V E VCC E Figure 17. Inductive Switching Test Circuit Figure 18. tON and tOFF Switching Test Circuit BVCES VCE tP VCE L C VARY tP TO OBTAIN REQUIRED PEAK ISCIS VGE ISCIS VCC + RG G VCC DUT - E tP 0V ISCIS 0 0.01Ω tAV Figure 19. Energy Test Circuit @2014 Fairchild Semiconductor Corporation FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3 Figure 20. Energy Waveforms 7 www.fairchildsemi.com FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Test Circuit and Waveforms TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower™ F-PFS™ ®* ® AX-CAP®* FRFET® ® SM Global Power Resource PowerTrench BitSiC™ TinyBoost® GreenBridge™ PowerXS™ Build it Now™ TinyBuck® Green FPS™ Programmable Active Droop™ CorePLUS™ TinyCalc™ ® Green FPS™ e-Series™ QFET CorePOWER™ TinyLogic® QS™ Gmax™ CROSSVOLT™ TINYOPTO™ Quiet Series™ GTO™ CTL™ TinyPower™ RapidConfigure™ IntelliMAX™ Current Transfer Logic™ TinyPWM™ ISOPLANAR™ DEUXPEED® ™ TinyWire™ Dual Cool™ Marking Small Speakers Sound Louder TranSiC™ EcoSPARK® Saving our world, 1mW/W/kW at a time™ and Better™ TriFault Detect™ EfficentMax™ SignalWise™ MegaBuck™ TRUECURRENT®* ESBC™ SmartMax™ MICROCOUPLER™ μSerDes™ SMART START™ MicroFET™ ® Solutions for Your Success™ MicroPak™ ® SPM® MicroPak2™ Fairchild ® UHC® STEALTH™ MillerDrive™ Fairchild Semiconductor SuperFET® Ultra FRFET™ MotionMax™ FACT Quiet Series™ SuperSOT™-3 UniFET™ mWSaver® FACT® ® OptoHiT™ SuperSOT™-6 VCX™ FAST ® OPTOLOGIC SuperSOT™-8 VisualMax™ FastvCore™ ® ® OPTOPLANAR SupreMOS VoltagePlus™ FETBench™ SyncFET™ XS™ FPS™ Sync-Lock™ 仙童 ™ tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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