FDZ8040L Integrated Load Switch Features Description Optimized for Low-Voltage Core ICs in Portable Systems Very Small Package Dimension: WLCSP 0.8 X 0.8 X 0.5 mm3 Current = 1.2 A, VIN Max. = 4 V This device is particularly suited for compact power management in portable applications needing 0.8 V to 4 V input and 1.2 A output current capability. This load switch integrated a level-shifting function that drives a Pchannel power MOSFET in a very small 0.8 X 0.8 X 0.5 mm3 WLCSP package. Current = 2 A, VIN Max. = 4 V (Pulsed) Applications RDS(on) = 80 mΩ at VON = VIN = 4 V RDS(on) = 85 mΩ at VON = VIN = 3.6 V RDS(on) = 90 mΩ at VON = VIN = 3 V Load Switch Power Management in Portable Applications RDS(on) = 360 mΩ at VON = VIN = 0.9 V RDS(on) = 1000 mΩ at VON = VIN = 0.8 V RoHS Compliant GND VOUT ON Pin 1 VIN Figure 1. Bottom View Figure 2. Top View Ordering Information Part Number Device Mark Ball Pitch Operating Temperature Range FDZ8040L ZM 0.4 mm -40 to 85°C © 2011 Fairchild Semiconductor Corporation FDZ8040L • Rev. C1 Switch Package 0.8 x 0.8 x 80 m, P-Channel 0.5 mm3 WLCSP MOSFET Packing Method Tape & Reel www.fairchildsemi.com FDZ8040L — Integrated Load Switch April 2013 FDZ8040L — Integrated Load Switch Typical Application VIN VOUT FDZ8040L VIN = 0.8 -4 V CIN ON OFF ON GND Figure 3. COUT Typical Application Block Diagram Figure 4. Internal Block Diagram Top View (Bumps Down) Figure 6. Pin Configuration Figure 5. Bottom View (Bumps Up) Pin Descriptions Pin # Name A1 VIN A2 VOUT B1 ON B2 GND Description Supply Input: Input to the load switch Switch Output: Output of the load switch ON/OFF Control Input Ground © 2011 Fairchild Semiconductor Corporation FDZ8040L • Rev. C6 www.fairchildsemi.com 2 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol VIN Parameter Voltage on VIN, VOUT, ON to GND IOUT_C IOUT-Load Current (Continuous) IOUT_P IOUT-Load Current (Pulsed) Max. Unit -0.3 4.2 V 1.2 A 2 A 0.9 W -40 85 °C -65 150 °C 135 °C/W (1a) (1a) PD Power Dissipation at TA = 25°C TA Operating Temperature Range TSTG Min. Storage Temperature RΘJA Thermal Resistance, Junction to Ambient ESD Electrostatic Discharge Capability (1a) Human Body Model, JESD22-A114 8 Charged Device Model, JESD22-C101 2 kV Notes: 1. RΘJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RΘJC is guaranteed by design, while RΘJA is determined by the board design. a. 2. 135°C/W when mounted on a 1-inch square pad of 2-oz copper. b. 360°C/W when mounted on a minimum pad of 2-oz copper. Pulse test: pulse width < 300 µs; duty cycle < 2.0%. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to Absolute Maximum Ratings. Symbol Parameter Min. Max. Unit VIN Voltage on VIN Pin 0.8 4.0 V VON Voltage on ON Pin 0.7 4.0 V 85 °C TA Operating Temperature Range © 2011 Fairchild Semiconductor Corporation FDZ8040L • Rev. C6 1 V to 4 V -40 0.8 V to 4 V -10 www.fairchildsemi.com 3 FDZ8040L — Integrated Load Switch Absolute Maximum Ratings TJ = 25°C and VIN=1.8 V, unless otherwise noted. Symbol Parameter VIN Operation Voltage VIL ON Input Logic Low Voltage VIH ON Input Logic High Voltage Test Conditions Min. Typ. 0.8 Max. Unit 4.0 V 1.6 V ≤ VIN ≤ 4.0 V 0.35 0.8 V ≤ VIN ≤ 1.6 V 0.25 1.6 V ≤ VIN ≤ 4.0 V 1.0 0.8 V ≤ VIN ≤ 1.6 V 0.7 V V IQ Quiescent Current IOUT = 0 mA, VIN = VON = 1.8 V 2.1 μA IQ(off) Off Supply Current IOUT = 0 mA, VIN = 1.8 V, VON = GND 1 μA ISD(off) Off Switch Current VON = GND, VOUT = 0 V, VIN = 1.8 V 100 nA ION ON Input Leakage VON = VIN or GND 1 μA RPD Output Discharge Pull-Down Resistance RDS(ON) Static Drain-Source On-Resistance © 2011 Fairchild Semiconductor Corporation FDZ8040L • Rev. C6 Ω 200 VON = VIN = 4 V, IOUT = 300 mA 50 80 VON = VIN = 3.6 V, IOUT = 300 mA 51 85 VON = VIN = 3 V, IOUT = 300 mA 54 90 VON = 0.7 V, VIN = 1.6 V, IOUT = 300 mA 73 110 VON = 0.7 V, VIN = 1 V, IOUT = 300 mA 140 309 VON = VIN = 0.9 V, IOUT = 10 mA 186 360 VON = VIN = 0.8 V, IOUT = 10 mA 348 1000 VON = VIN = 0.9 V, IOUT = 10 mA, TJ = 10 ~ 85°C 194 370 VON = VIN = 0.8 V, IOUT = 10 mA, TJ = 10 ~ 85°C 268 750 VIN = 3.6 V, IOUT = 300 mA, TJ = 85°C 59 102 mΩ www.fairchildsemi.com 4 FDZ8040L — Integrated Load Switch Electrical Characteristics Symbol Parameter Typical Unit 22 μs 23 μs 109 μs Turn-Off Fall Time 285 μs td(on) Turn-On Delay Time 37 μs tr Turn-On Rise Time 35 μs td(off) Turn-Off Delay Time td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Test Conditions VIN = 1.6 V, VON = 0.7 V, CL = 1 μF, RL = 500 Ω VIN = 1 V, VON = 1.8 V, CL = 1 μF, RL = 500 Ω 112 μs Turn-Off Fall Time 332 μs td(on) Turn-On Delay Time 20 μs tr Turn-On Rise Time 22 μs td(off) Turn-Off Delay Time 122 μs Turn-Off Fall Time 296 μs td(on) Turn-On Delay Time 15 μs tr Turn-On Rise Time 19 μs td(off) Turn-Off Delay Time 160 μs Turn-Off Fall Time 295 μs td(on) Turn-On Delay Time 13 μs tr Turn-On Rise Time 18 μs td(off) Turn-Off Delay Time 193 μs Turn-Off Fall Time 305 μs td(on) Turn-On Delay Time 53 μs tr Turn-On Rise Time 56 μs td(off) Turn-Off Delay Time 143 μs Turn-Off Fall Time 532 μs td(on) Turn-On Delay Time 51 μs tr Turn-On Rise Time 54 μs td(off) Turn-Off Delay Time 148 μs 525 μs tf tf tf tf tf tf VIN = 1.8 V, VON = 1.8 V, CL = 1 μF, RL = 500 Ω VIN = 2.5 V, VON = 1.8 V, CL = 1 μF, RL = 500 Ω VIN = 3.3 V, VON = 1.8 V, CL = 1 μF, RL = 500 Ω VIN = 0.8 V, VON = 0.8 V, CL = 1 μF, RL = 500 Ω VIN = 0.9 V, VON = 0.9 V, CL = 1 μF, RL = 500 Ω Turn-Off Fall Time © 2011 Fairchild Semiconductor Corporation FDZ8040L • Rev. C6 www.fairchildsemi.com 5 FDZ8040L — Integrated Load Switch Switching Characteristics FDZ8040L — Integrated Load Switch Typical Performance Characteristics Figure 7. Shutdown Current vs. Temperature Figure 8. Shutdown Current vs. Supply Voltage Figure 9. Off Supply Current vs. Temperature Figure 10. Off Supply Current vs. Supply Voltage Figure 11. Quiescent Current vs. Temperature Figure 12. Quiescent Current vs. Supply Voltage © 2011 Fairchild Semiconductor Corporation FDZ8040L • Rev. C6 www.fairchildsemi.com 6 FDZ8040L — Integrated Load Switch Typical Performance Characteristics Figure 13. Figure 15. Figure 17. RON vs. Temperature Figure 14. ON-Pin Threshold vs. VIN Figure 16. VOUT Rise and Fall Time vs. Temperature at RL=500 VOUT Turn-On and Turn-Off Delay vs. Temperature at RL=500 © 2011 Fairchild Semiconductor Corporation FDZ8040L • Rev. C6 RON vs. Supply Voltage Figure 18. Forward Bias Safe Operation Area www.fairchildsemi.com 7 FDZ8040L — Integrated Load Switch Typical Performance Characteristics Figure 19. Turn-On Response (VIN = 3.3 V, COUT=1 µF, RL=500 Ω) Figure 20. Turn-Off Response (VIN = 3.3 V, COUT=1 µF, RL=500 Ω) © 2011 Fairchild Semiconductor Corporation FDZ8040L • Rev. C6 www.fairchildsemi.com 8 The FDZ8040L is a low-RDS(ON) P-channel load switch packaged in space-saving 0.8 x 0.8 WLCSP. of 0.8-4 V. The ON pin, an active HIGH TTL-compatible input that supports input as low as 0.7 V, controls the state of the switch. The core of the device is an 80 mΩ P-channel MOSFET capable of functioning over a wide input operating range Applications Information VIN VOUT FDZ8040L VIN = 0.8 -4 V CIN ON OFF ON GND Figure 21. COUT RL Typical Application Input Capacitor Output Capacitor To reduce device inrush current effect, a 0.1 µF ceramic capacitor, CIN, is recommended close to the VIN pin. A higher value of CIN can be used to further reduce the voltage drop experienced as the switch is turned on into a large capacitive load. FDZ8040L works without an output capacitor. However, if parasitic board inductance forces VOUT below GND when switching off, a 0.1 µF capacitor, COUT, should be placed between the VOUT and GND pins. © 2011 Fairchild Semiconductor Corporation FDZ8040L • Rev. C6 www.fairchildsemi.com 9 FDZ8040L — Integrated Load Switch Functional Description FDZ8040L — Integrated Load Switch Physical Dimensions F 0.03 C A E 2X 0.40 B Ø0.20 Cu Pad A1 0.40 D BALL A1 INDEX AREA Ø0.30 Solder Mask 0.03 C 2X TOP VIEW RECOMMENDED LAND PATTERN (NSMD PAD TYPE) 0.06 C 0.292±0.018 0.539 0.461 0.05 C C E 0.208±0.021 SEATING PLANE SIDE VIEWS D NOTES: A. NO JEDEC REGISTRATION APPLIES. 0.005 B. DIMENSIONS ARE IN MILLIMETERS. C A B Ø0.260±0.020 4X 0.40 B A 0.40 C. DIMENSIONS AND TOLERANCE PER ASME Y14.5M, 1994. (Y)±0.018 D. DATUM C IS DEFINED BY THE SPHERICAL CROWNS OF THE BALLS. F 1 2 E. PACKAGE NOMINAL HEIGHT IS 500 MICRONS ±39 MICRONS (461-539 MICRONS). (X)±0.018 F. FOR DIMENSIONS D, E, X, AND Y SEE PRODUCT DATASHEET. BOTTOM VIEW G. DRAWING FILNAME: MKT-UC004AFrev1. Figure 22. 4-Ball, WLCSP, 2 X 2 Array, 0.4 mm Pitch, 250 µm Ball Product-Specific Dimensions Product D E X Y FDZ8040L 0.8 ±0.03 mm 0.8 ±0.03 mm 0.21 mm 0.21 mm Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/. © 2011 Fairchild Semiconductor Corporation FDZ8040L • Rev. C6 www.fairchildsemi.com 10 FDZ8040L — Integrated Load Switch © 2011 Fairchild Semiconductor Corporation FDZ8040L • Rev. C6 www.fairchildsemi.com 11