HGTG40N60B3 Data Sheet November 2004 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. • 70A, 600V, TC = 25oC File Number • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . 100ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Packaging JEDEC STYLE TO-247 E C Formerly Developmental Type TA49052. G Ordering Information PART NUMBER HGTG40N60B3 PACKAGE TO-247 COLLECTOR (FLANGE) BRAND G40N60B3 NOTE: When ordering, use the entire part number. Symbol C G E FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 ©2004 Fairchild Semiconductor Corporation HGTG40N60B3 Rev. B3 HGTG40N60B3 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG40N60B3 UNITS 600 V At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 70 A At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 40 A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 330 A Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM ±30 V Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA 100A at 600V Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 290 W Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.33 W/oC Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV 100 mJ Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260 oC Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 2 µs Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 10 µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 3Ω. S Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V Emitter to Collector Breakdown Voltage BVECS IC = -10mA, VGE = 0V Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA ICES VCE(SAT) VGE(TH) 20 - - V VCE = BVCES TC = 25oC - - 100 µA VCE = BVCES TC = 150oC - - 6.0 mA IC = IC110, VGE = 15V TC = 25oC - 1.4 2.0 V TC = 150oC - 1.5 2.3 V 3.0 4.8 6.0 V - - ±100 nA VCE = 480V 200 - - A VCE = 600V 100 - - A IC = IC110, VCE = 0.5 BVCES - 7.5 - V IC = IC110, VCE = 0.5 BVCES VGE = 15V - 250 330 nC VGE = 20V - 335 435 nC - 47 - ns - 35 - ns - 170 200 ns - 50 100 ns - 1050 1200 µJ - 800 1400 µJ IC = 250µA, VCE = VGE IGES VGE = ±20V SSOA TJ = 150oC RG = 3Ω VGE = 15V L = 100µH Gate to Emitter Plateau Voltage On-State Gate Charge Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time VGEP QG(ON) td(ON)I trI td(OFF)I Current Fall Time tfI Turn-On Energy EON Turn-Off Energy (Note 1) EOFF ©2004 Fairchild Semiconductor Corporation IGBT and Diode Both at TJ = 25oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 3Ω L = 100µH Test Circuit (Figure 17) HGTG40N60B3 Rev. B3 HGTG40N60B3 Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Current Turn-On Delay Time TEST CONDITIONS trI Current Turn-Off Delay Time TYP MAX UNITS - 47 - ns - 35 - ns - 285 375 ns - 100 175 ns - 1850 - µJ IGBT and Diode Both at TJ = 150oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 3Ω L = 100µH Test Circuit (Figure 17) td(ON)I Current Rise Time MIN td(OFF)I Current Fall Time tfI Turn-On Energy EON Turn-Off Energy (Note 1) EOFF - 2000 - µJ Thermal Resistance Junction To Case RθJC - - 0.43 oC/W NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due to diode recovery. (Unless Otherwise Specified) VGE = 15V 80 60 PACKAGE LIMITED 40 20 0 25 50 75 100 125 150 250 TJ = 150oC, RG = 3Ω, VGE = 15V 200 150 100 50 0 0 TC , CASE TEMPERATURE (oC) VGE fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 0.43oC/W, SEE NOTES 10 20 40 60 80 100 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT ©2004 Fairchild Semiconductor Corporation tSC , SHORT CIRCUIT WITHSTAND TIME (µs) fMAX, OPERATING FREQUENCY (kHz) TC 75oC 15V 75oC 10V 110oC 15V 110oC 10V 1 300 400 500 600 700 FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA TJ = 150oC, RG = 3Ω, L = 100µH, V CE = 480V 10 200 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE 100 100 900 18 VCE = 360V, RG = 3Ω, TJ = 125oC 800 16 ISC 14 700 600 12 10 500 tSC 8 400 300 6 4 10 11 12 13 14 200 15 ISC, PEAK SHORT CIRCUIT CURRENT (A) ICE , DC COLLECTOR CURRENT (A) 100 ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 4. SHORT CIRCUIT WITHSTAND TIME HGTG40N60B3 Rev. B3 HGTG40N60B3 (Unless Otherwise Specified) (Continued) 200 DUTY CYCLE <0.5%, VGE = 10V PULSE DURATION = 250µs 150 TC = -55oC TC = 150oC 100 TC = 25oC 50 0 0 1 2 3 4 5 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 200 DUTY CYCLE <0.5%, VGE = 15V PULSE DURATION = 250µs 150 TC = -55oC TC = 150oC 100 TC = 25oC 50 0 0 1 VCE, COLLECTOR TO EMITTER VOLTAGE (V) TJ = 150oC, VGE = 10V TJ = 150oC, VGE = 15V 8 FIGURE 6. COLLECTOR TO EMITTER ON STATE VOLTAGE EOFF, TURN-OFF ENERGY LOSS (mJ) EON , TURN-ON ENERGY LOSS (mJ) TJ = 25oC, VGE = 10V 12 4 TJ = 25oC, VGE = 15V 0 20 40 60 80 RG = 3Ω, L = 100µH, VCE = 480V 6 TJ = 150oC; VGE = 10V AND 15V 4 2 TJ = 25oC; VGE = 10V AND 15V 0 100 20 ICE , COLLECTOR TO EMITTER CURRENT (A) 40 60 80 100 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 90 600 RG = 3Ω, L = 100µH, VCE = 480V RG = 3Ω, L = 100µH, VCE = 480V 80 500 TJ = 25oC, VGE = 10V 70 trI , RISE TIME (ns) tdI , TURN-ON DELAY TIME (ns) 4 8 RG = 3Ω, L = 100µH, VCE = 480V 16 3 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON STATE VOLTAGE 20 2 TJ = 150oC, VGE = 10V 60 TJ = 25oC, VGE = 15V 50 TJ = 150oC, VGE = 15V 40 40 60 80 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT ©2004 Fairchild Semiconductor Corporation 400 TJ = 150oC, VGE = 10V 300 200 TJ = 25oC AND 150oC, VGE = 10V AND 15V 100 30 20 TJ = 25oC, VGE = 10V 100 0 20 40 60 80 100 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT HGTG40N60B3 Rev. B3 HGTG40N60B3 Typical Performance Curves (Unless Otherwise Specified) (Continued) 180 RG = 3Ω, L = 100µH, VCE = 480V RG = 3Ω, L = 100µH, VCE = 480V TJ = 150oC, VGE = 15V 250 tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 300 TJ = 150oC, VGE = 10V 200 TJ = 25oC, VGE = 15V 150 140 TJ = 150oC, VGE = 10V AND 15V 100 60 TJ = 25oC, VGE = 10V AND 15V TJ = 25oC, VGE = 15V 100 40 20 60 80 20 100 20 ICE , COLLECTOR TO EMITTER CURRENT (A) 15 200 DUTY CYCLE = <0.5%, VCE = 10V PULSE DURATION = 25µs 160 120 TC = 25oC 40 TC = 150oC 60 80 100 FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT VGE, GATE TO EMITTER VOLTAGE (V) ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 80 40 ICE , COLLECTOR TO EMITTER CURRENT (A) TC = -55oC Ig(REF) = 3.255mA, RL = 7.5Ω, TC = 25oC 12 VCE = 400V VCE = 600V 9 6 VCE = 200V 3 0 0 4 5 6 7 8 9 0 10 50 VGE, GATE TO EMITTER VOLTAGE (V) 100 150 200 250 300 QG, GATE CHARGE (nC) FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORM 14 FREQUENCY = 400kHz 12 C, CAPACITANCE (nF) CIES 10 8 6 4 COES 2 CRES 0 0 5 10 15 20 25 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE ©2004 Fairchild Semiconductor Corporation HGTG40N60B3 Rev. B3 HGTG40N60B3 ZθJC , NORMALIZED THERMAL IMPEDANCE Typical Performance Curves (Unless Otherwise Specified) (Continued) 100 0.5 0.2 10-1 0.1 0.05 t1 0.02 PD DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 0.01 SINGLE PULSE 10-2 10-5 10-4 10-3 10-2 10-1 t2 100 101 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveform L = 100µµH 90% RHRP3060 10% VGE EON EOFF RG = 3Ω VCE + - 90% VDD = 480V ICE 10% td(OFF)I tfI trI td(ON)I FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT ©2004 Fairchild Semiconductor Corporation FIGURE 18. SWITCHING TEST WAVEFORM HGTG40N60B3 Rev. B3 HGTG40N60B3 Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 10. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 18. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 18. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ©2004 Fairchild Semiconductor Corporation HGTG40N60B3 Rev. B3 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC Across the board. Around the world.™ OPTOPLANAR™ PACMAN™ The Power Franchise POP™ Programmable Active Droop™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I13