KST2907A PNP Epitaxial Silicon Transistor Features 3 • General-Purpose Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Marking Package Packing Method KST2907AMTF 2F SOT-23 3L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage IC TSTG -5 V Collector Current -600 mA Storage Temperature 150 °C Max. Unit 350 mW Derate Above 25°C 2.8 mW/°C Thermal Resistance, Junction-to-Ambient 357 °C/W Thermal Characteristics(1) Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Total Device Dissipation Note: 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. © 2002 Fairchild Semiconductor Corporation KST2907A Rev. 1.5 www.fairchildsemi.com KST2907A — PNP Epitaxial Silicon Transistor February 2015 Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit BVCBO Collector-Base Breakdown Voltage IC = -10 μA, IE = 0 -60 V BVCEO Collector-Emitter Breakdown Voltage(2) IC = -10 mA, IB = 0 -60 V BVEBO Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 -5 V Collector Cut-Off Current VCB = -50 V, IE = 0 ICBO hFE DC Current Gain 75 VCE = -10 V, IC = -1.0 mA 100 VCE = -10 V, IC = -10 mA 100 VCE = -10 V, IC = -150 mA(2) 100 VCE = -10 V, IC = -500 mA VCE(sat) Collector-Emitter Saturation Voltage(2) VBE(sat) Base-Emitter Saturation Voltage(2) -0.01 VCE = -10 V, IC = -0.1 mA (2) μA 300 50 IC = -150 mA, IB = -15 mA -0.4 IC = -500 mA, IB = -50 mA -1.6 IC = -150 mA, IB = -15 mA -1.3 IC = -500 mA, IB = -50 mA -2.6 V V Current Gain Bandwidth Product IC = -50 mA, VCE = -20 V, f = 100 MHz Cob Output Capacitance VCB = -10 V, IE = 0, f = 1.0 MHz 8 pF tON Turn-On Time VCC = -30 V, IC = -150 mA, IB1 = -15 mA 50 ns tOFF Turn-Off Time VCC = -6 V, IC = -150 mA, IB1 = IB2 = -15mA 110 ns fT 200 MHz Note: 2. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. © 2002 Fairchild Semiconductor Corporation KST2907A Rev. 1.5 www.fairchildsemi.com 2 KST2907A — PNP Epitaxial Silicon Transistor Electrical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 hFE, DC CURRENT GAIN VCE = 10V 100 10 -1 -10 -100 -1000 -10 IC = 10 IB VBE(sat) -1 -0.1 VCE(sat) -0.01 -1 IC[A], COLLECTOR CURRENT Figure 1. DC Current Gain -100 -1000 Figure 2. Collector-Emitter Saturation Voltage and Base-Emitter Saturation Voltage 12 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 1000 IE = 0 f = 1MHz 10 Cob [pF], CAPACITANCE -10 IC[mA], COLLECTOR CURRENT 8 6 4 2 0 -1 -10 -100 100 10 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT VCB [V], COLLECTOR-BASE VOLTAGE Figure 3. Output Capacitance © 2002 Fairchild Semiconductor Corporation KST2907A Rev. 1.5 VCE = -20V Figure 4. Current Gain Bandwidth Product www.fairchildsemi.com 3 KST2907A — PNP Epitaxial Silicon Transistor Typical Performance Characteristics KST2907A — PNP Epitaxial Silicon Transistor Physical Dimensions 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 0.25 0.20 MIN (0.55) SEATING PLANE SCALE: 2X Figure 5. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE © 2002 Fairchild Semiconductor Corporation KST2907A Rev. 1.5 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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