FDN338P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –1.6 A, –20 V. RDS(ON) = 115 mΩ @ V GS = –4.5 V RDS(ON) = 155 mΩ @ V GS = –2.5 V Applications • Fast switching speed • Battery management • Load switch • High performance trench technology for extremely low RDS(ON) • Battery protection • SuperSOTT M -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint D D S S G TM SuperSOT -3 G Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Ratings Units V DSS Drain-Source Voltage Parameter –20 V V GSS Gate-Source Voltage V ID Drain Current ±8 –1.6 – Continuous – Pulsed PD Maximum Power Dissipation (Note 1a) (Note 1b) TJ , TSTG A –5 0.5 W 0.46 –55 to +150 °C (Note 1a) 250 °C/W (Note 1) 75 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJ C Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 338 FDN338P 7’’ 8mm 3000 units 2001 Fairchild Semiconductor Corporation FDN338P Rev F1(W) FDN338P November 2013 Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units –16 mV/°C Off Characteristics ∆BV DSS ∆TJ IDSS Drain–Source Breakdown Voltage V GS = 0 V, ID = –250 µA Breakdown Voltage Temperature ID = –250 µA, Referenced to 25°C Coefficient Zero Gate Voltage Drain Current V DS = –16 V, V GS = 0 V IGSSF Gate–Body Leakage, Forward V GS = 8 V, V DS = 0 V 100 µA nA IGSSR Gate–Body Leakage, Reverse V GS = –8 V, V DS = 0 V –100 nA BV DSS On Characteristics –20 V –1 (Note 2) V GS(th) Gate Threshold Voltage V DS = V GS , ID = –250 µA ∆V GS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = –250 µA, Referenced to 25°C 2.7 88 117 116 ID(on) On–State Drain Current V GS V GS V GS V GS gFS Forward Transconductance V DS = –5 V, ID = –1.6 A 6 S V DS = –10 V, f = 1.0 MHz V GS = 0 V, 451 pF 75 pF 33 pF –0.4 = –4.5 V, ID = –1.6 A = –2.5 V, ID = –1.3 A = –4.5 V, ID = –1.6 A, TJ =125°C = –4.5 V, V DS = –5 V –0.8 –1.5 V mV/°C 115 155 165 –5 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) (Note 2) V DD = –10 V, V GS = –4.5 V, 10 20 ns 11 20 ns Turn–Off Delay Time 16 29 ns tf Turn–Off Fall Time 6.5 13 ns Qg Total Gate Charge 4.4 6.2 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge V DS = –10 V, V GS = –4.5 V ID = –1 A, RGEN = 6 Ω ID = –1.6 A, 1.1 nC 0.7 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current V SD Drain–Source Diode Forward Voltage V GS = 0 V, IS = –0.42 (Note 2) –0.7 –0.42 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 250°C/W when mounted on a 0.02 in2 pad of 2 oz. copper. b) 270°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDN338P Rev F1(W) FDN338P Typical Characteristics 5 2.2 V GS = -4.5V -3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -2.5V -2.0V -ID , DRAIN CURRENT (A) 4 3 2 1 2 VGS = -2.0V 1.8 1.6 1.4 -2.5V -3.0V 1.2 -3.5V -4.5V 1 0.8 0 0 0.5 1 1.5 0 2 1 Figure 1. On-Region Characteristics. 4 5 0.34 ID = -0.8 A ID = -1.6A V GS = -4.5V 1.6 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 1.4 1.2 1 0.8 0.3 0.26 0.22 0.18 T A = 125o C 0.14 0.1 TA = 25o C 0.6 -50 -25 0 25 50 75 100 125 150 0.06 1 2 T J, JUNCTION TEMPERATURE ( oC) 3 4 5 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 5 VDS = - 5V TA = -55o C V GS = 0V 25oC 1 4 -ID, DRAIN CURRENT (A) 2 -I D, DRAIN CURRENT (A) -V DS, DRAIN-SOURCE VOLTAGE (V) 125o C TA = 125o C 3 0.1 2 0.01 1 0.001 25o C -55 oC 0.0001 0 0.5 0.75 1 1.25 1.5 1.75 2 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2.25 0 0.2 0.4 0.6 0.8 1 1.2 -V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDN338P Rev F1(W) FDN338P Typical Characteristics 5 600 I D = -1.6A V DS = -5V -V GS, GATE-SOURCE VOLTAGE (V) -10V f = 1MHz VG S = 0 V 500 4 CISS -15V 400 3 300 2 200 CO S S 1 100 CR S S 0 0 0 1 2 3 4 5 0 2 Q g , GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 6 8 10 20 RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) 1ms 10ms 100ms 1 1s 10s DC V GS =-4.5V SINGLE PULSE Rθ JA = 270oC/W 0.1 TA = 25o C 0.01 0.1 1 10 SINGLE PULSE RθJA = 270°C/W TA = 25°C 15 10 5 0 0.001 100 0.01 -V DS , DRAIN-SOURCE VOLTAGE (V) 0.1 1 10 100 1000 t 1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 12 Figure 8. Capacitance Characteristics. 10 -ID, DRAIN CURRENT (A) 4 -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) x R θJA RθJA = 270 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 t1 0.01 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDN338P Rev F1(W) TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Sync-Lock™ AccuPower™ F-PFS™ ® AX-CAP®* FRFET® ®* ® SM Global Power Resource PowerTrench BitSiC™ GreenBridge™ PowerXS™ Build it Now™ TinyBoost® CorePLUS™ Green FPS™ Programmable Active Droop™ TinyBuck® ® CorePOWER™ Green FPS™ e-Series™ QFET TinyCalc™ QS™ CROSSVOLT™ Gmax™ TinyLogic® Quiet Series™ CTL™ GTO™ TINYOPTO™ RapidConfigure™ Current Transfer Logic™ IntelliMAX™ TinyPower™ DEUXPEED® ISOPLANAR™ ™ TinyPWM™ Dual Cool™ Marking Small Speakers Sound Louder TinyWire™ Saving our world, 1mW/W/kW at a time™ EcoSPARK® and Better™ TranSiC™ EfficentMax™ SignalWise™ MegaBuck™ TriFault Detect™ ESBC™ SmartMax™ MICROCOUPLER™ TRUECURRENT®* SMART START™ MicroFET™ ® μSerDes™ Solutions for Your Success™ MicroPak™ SPM® MicroPak2™ Fairchild® STEALTH™ MillerDrive™ Fairchild Semiconductor® UHC® SuperFET® MotionMax™ FACT Quiet Series™ ® Ultra FRFET™ SuperSOT™-3 mWSaver FACT® UniFET™ OptoHiT™ SuperSOT™-6 FAST® VCX™ OPTOLOGIC® SuperSOT™-8 FastvCore™ VisualMax™ OPTOPLANAR® SupreMOS® FETBench™ VoltagePlus™ SyncFET™ FPS™ XS™ tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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