BAS21 General-Purpose High Voltage Diode CONNECTION DIAGRAM 3 3 3 A82. 2 SOT-23 1 2 1 2 NC 1 Ordering Information Part Number Top Mark Package Packing Method BAS21 A82. SOT-23 3L Tape and Reel Absolute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol WIV Parameter Value Unit Working Inverse Voltage 250 V IO Average Rectified Current 200 mA IF DC Forward Current 600 mA if Recurrent Peak Forward Current 700 mA if(surge) Peak Forward Surge Current TSTG Storage Temperature Range TJ Operating Junction Temperature Pulse Width = 1.0 second 1.0 Pulse Width = 1.0 microsecond 2.0 A -55 to +150 °C 150 °C Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. © 2002 Fairchild Semiconductor Corporation BAS21 Rev. 1.2 www.fairchildsemi.com BAS21 — General-Purpose High Voltage Diode February 2015 Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Max. Unit Total Device Dissipation 350 mW Derate Above 25°C 2.8 mW/°C Thermal Resistance, Junction-to-Ambient 357 °C/W Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter BV Breakdown Voltage IR Reverse Voltage Leakage Current Conditions IR = 100 μA Min. Max. 250 Unit V VR = 200 V 100 nA VR = 200 V, TA = 150°C 100 μA IF = 100 mA 1.0 V IF = 200 mA 1.25 V VF Forward Voltage CO Diode Capacitance VR = 0, f = 1.0 MHz 5.0 pF Reverse Recovery Time IF = IR = 30 mA, IRR = 3.0 mA, RL = 100 Ω 50 nS TRR © 2002 Fairchild Semiconductor Corporation BAS21 Rev. 1.2 www.fairchildsemi.com 2 BAS21 — General-Purpose High Voltage Diode Thermal Characteristics IR - REVERSE CURRENT (nA) VVRR - REVERSE VOLTAGE (V) 325 Ta= 25°C 300 275 3 5 10 20 30 50 I R - REVERSE CURRENT (uA) 30 20 10 0 55 75 95 115 135 155 175 195 V R - REVERSE VOLTAGE (V) GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature Figure 2. Reverse Current vs. Reverse Voltage IR - 55 to 205 V V VFF - FORWARD VOLTAGE (mV) IIRR - REVERSE CURRENT (nA) 40 100 Ta= 25°C Ta= 25°C 450 80 400 70 60 350 50 40 300 30 20 180 200 220 240 VR - REVERSE VOLTAGE (V) 250 255 1 GENERAL RULE: The Reverse Current of a diode will approximately double for every ten Degree C increase in Temperature Figure 3. Reverse Current vs. Reverse Voltage IR - 180 to 255 V 725 Ta= 25°C 700 650 600 550 500 450 0.1 0.2 0.3 0.5 1 2 3 5 I F - FORWARD CURRENT (mA) 10 Figure 5. Forward Voltage vs. Forward Current VF - 0.1 to 10 mA © 2002 Fairchild Semiconductor Corporation BAS21 Rev. 1.2 2 3 5 10 20 30 50 IF - FORWARD CURRENT (uA) 100 Figure 4. Forward Voltage vs. Forward Current VF - 1.0 to 100 μA VVFF - FORWARD VOLTAGE (mV) VVF F - FORWARD VOLTAGE (mV) Ta= 25°C 100 Figure 1. Reverse Voltage vs. Reverse Current BV - 1.0 to 100 μA 90 50 1.4 Ta= 25°C 1.3 1.2 1.1 1 0.9 0.8 0.7 10 20 30 50 100 200 300 IF - FORWARD CURRENT (mA) 500 800 Figure 6. Forward Voltage vs. Forward Current VF - 10 to 800 mA www.fairchildsemi.com 3 BAS21 — General-Purpose High Voltage Diode Typical Performance Characteristics VVFF - FORWARD VOLTAGE (mV) 1.3 Ta= 25°C CAPACITANCE (pF) 800 Ta= -40°C 600 Ta= 25°C 400 Ta= +80°C 1.2 1.1 1 0.9 200 0.8 0.001 0.003 0.01 0.03 0.1 0.3 1 I F - FORWARD CURRENT (mA) 3 10 500 50 40 30 20 IF = IR = 30 mA Rloop = 100 Ohms 1 1.5 2 2.5 Irr - REVERSE RECOVERY CURRENT (mA) 2 4 6 8 10 REVERSE VOLTAGE (V) 12 14 15 Figure 8. Capacitance vs. Reverse Voltage I - CURRENT (mA) REVERSE RECOVERY (nS) Figure 7. Forward Voltage vs. Ambient Temperature VF - 1.0 μA - 10 mA (- 40 to +80°C) 0 400 300 -F OR WA RD CU RR EN TS TE AD Y Io - A ST VER AT AGE E REC -m TIFIE D CU A RRE NT mA 200 100 0 3 IR 0 50 100 150 o TA - AMBIENT TEMPERATURE ( C) Figure 10. Average Rectified Current(IO) and Forward Current (IF) vs. Ambient Temperature(TA) Figure 9. Reverse Recovery Time vs. Reverse Recovery Current (Irr) PD - POWER DISSIPATION (mW) 500 400 300 SOT-23 Pkg 200 100 0 0 50 100 150 IO - AVERAGE TEMPERATURE ( oC) 200 Figure 11. Power Derating Curve © 2002 Fairchild Semiconductor Corporation BAS21 Rev. 1.2 www.fairchildsemi.com 4 BAS21 — General-Purpose High Voltage Diode Typical Performance Characteristics (Continued) BAS21 — General-Purpose High Voltage Diode Physical Dimensions 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 0.25 0.20 MIN (0.55) SEATING PLANE SCALE: 2X Figure 12. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE © 2002 Fairchild Semiconductor Corporation BAS21 Rev. 1.2 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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