Datasheet - Fairchild Semiconductor

KSC1815
NPN Epitaxial Silicon Transistor
Features
• Audio Frequency Amplifier and High-Frequency OSC
• Complement to KSA1015
• Collector-Base Voltage: VCBO = 50 V
1
TO-92
1. Emitter 2. Collector 3. Base
Ordering Information
Part Number
Top Mark
Package
Packing Method
KSC1815YTA
YC&3
TO-92 3L
Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
V
VCBO
Collector-Base Voltage
60
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
150
mA
IC
Collector Current
IB
Base Current
50
mA
TJ
Junction Temperature
150
°C
-55 to 150
°C
TSTG
Storage Temperature Range
© 2002 Fairchild Semiconductor Corporation
KSC1815 Rev. 1.1.2
www.fairchildsemi.com
1
KSC1815 — NPN Epitaxial Silicon Transistor
May 2014
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
RθJA
Parameter
Max.
Unit
Total Device Dissipation
400
mW
Derate Above 25°C
3.2
mW/°C
Thermal Resistance, Junction to Ambient
312
°C/W
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-Off Current
VCB = 60 V, IE = 0
0.1
μA
IEBO
Emitter Cut-Off Current
VEB = 5 V, IC = 0
0.1
μA
hFE1
DC Current Gain
VCE = 6 V, IC = 2 mA
70
hFE2
25
700
DC Current Gain
VCE = 6 V, IC = 150 mA
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 100 mA, IB = 10 mA
VBE(sat)
Base-Emitter Saturation Voltage
IC = 100 mA, IB = 10 mA
fT
Current Gain Bandwidth Product
VCE = 10 V, IC = 1 mA
Cob
Output Capacitance
VCB = 10 V, IE = 0,
f = 1 MHz
2.0
3.0
pF
NF
Noise Figure
VCE = 6 V, IC = 0.1 mA,
RS = 10 kΩ, f = 1 Hz
1.0
10.0
dB
0.10
0.25
V
1.0
V
80
MHz
hFE Classification
Classification
O
Y
GR
L
hFE1
70 ~ 140
120 ~ 240
200 ~ 400
350 ~ 700
© 2002 Fairchild Semiconductor Corporation
KSC1815 Rev. 1.1.2
www.fairchildsemi.com
2
KSC1815 — NPN Epitaxial Silicon Transistor
Thermal Characteristics(1)
100
100
VCE=6V
IB = 350μA
80
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
IB = 400μA
IB = 300μA
IB = 250μA
60
IB = 200μA
IB = 150μA
40
IB = 100μA
20
IB = 50μA
4
8
12
16
1
0.1
0.0
0
0
10
20
VCE[V], COLLECTOR-EMITTER VOLTAGE
10
1.0
1.2
1000
IC=10IB
VBE(sat)
1000
VCE(sat)
100
10
1
IC[mA], COLLECTOR CURRENT
10
100
1000
IC[mA], COLLECTOR CURRENT
Figure 3. DC Current Gain
Figure 4. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
100
1000
fT[MHz],
CURRENT GAIN-BANDWIDTH PRODUCT
f=1MHz
IE=0
Cob[pF], CAPACITANCE
0.8
10000
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
hFE, DC CURRENT GAIN
1000
100
0.6
Figure 2. Transfer Characteristic
VCE = 6V
10
0.4
VBE[V], BASE-EMITTER VOLTAGE
Figure 1. Static Characteristic
1
0.2
10
1
1
10
100
1000
VCB[V], COLLECTOR-BASE VOLTAGE
100
10
1
0.1
1
10
100
IC[mA], COLLECTOR CURRENT
Figure 5. Output Capacitance
© 2002 Fairchild Semiconductor Corporation
KSC1815 Rev. 1.1.2
VCE=6V
Figure 6. Current Gain Bandwidth Product
www.fairchildsemi.com
3
KSC1815 — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
KSC1815 — NPN Epitaxial Silicon Transistor
Physical Dimensions
TO-92 3L (Ammo)
Figure 7. 3-LEAD, TO-92, MOLDED 0.200 IN LINE SPACING LEAD FORM (J61Z OPTION)
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© 2002 Fairchild Semiconductor Corporation
KSC1815 Rev. 1.1.2
www.fairchildsemi.com
4
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Datasheet contains the design specifications for product development. Specifications may change
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Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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Rev. I68
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