FSV1045V
10 A, 45 V Ultra-Low VF Schottky Rectifier
Features
Description
• Ultra-Low Forward Voltage Drop:
- 0.41 V Typical at 10 A, TA = 25°C
- 0.44 V Maximum at 10 A, TA = 25°C
• Low Thermal Resistance
• Very Low Profile: Typical Height of 1.1 mm
• RoHS Compliant
• Halogen Free
• Meets MSL 1 per JESD22-A111 Full-Body Solder
Immersion
The FSV1045V schottky rectifier offers break-through
size and performance. The device is optimized for mobile
charger applications. It sinks only 18 mA reverse current
at high temperature and provides forward voltage drop of
0.18 V at 1 A operating current in a charger design.
All this capability is packed into a small, flat-lead, TO-277
package, optimized for space-constrained applications.
The FSV1045V supports a typical Z height of 1.1 mm. It is
RoHS compliant and halogen free. It is also qualified for a
wave soldering process.
Applications
3
• Mobile Charger
• Solar Panel
• Reverse Polarity Protection
2
TO-277
1
3
Cathode
Anode 1
Anode 2
Ordering Information
Part Number
Top Mark
Package
Packing Method
FSV1045V
FSV1045V
TO-277 3L
Tape and Reel
© 2014 Fairchild Semiconductor Corporation
FSV1045V Rev. 1.1
www.fairchildsemi.com
FSV1045V — 10 A, 45 V Ultra-Low VF Schottky Rectifier
May 2015
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VRRM
Peak Repetitive Reverse Voltage
45
V
VRWM
Working Peak Reverse Voltage
45
V
VRMS
RMS Reverse Voltage
32
V
45
V
10
A
300
A
VR
DC Blocking Voltage
IO
Average Rectified Output Current(2)
TL = 105°C
Non-Repetitive Peak Forward Surge Current
IFSM
(3)
CJ
Typical Junction Capacitance
820
pF
TJ
Operating Junction Temperature Range
-55 to +150
°C
Storage Temperature Range
-55 to +150
°C
TSTG
VR = 4 V, 1 MHz
Notes:
1. All tests conducted at TA = TJ = 25°C unless otherwise noted.
2. Mounted on 30 mm x 30 mm FR4 PCB.
3. Pulse condition: 8.3 ms single half-sine wave. Test method is compliant with MIL standard. (MIL-STD-750E)
Thermal Characteristics(4)
Values are at TA = 25°C unless otherwise noted.
Symbol
RθJA
ψJL
Minimum
Maximum
Land Pattern Land Pattern
Parameter
Junction-to-Ambient Thermal Resistance
100
40
Junction-to-Lead Thermal Characteristics,
Thermocouple Soldered to Anode
15
12
Junction-to-Lead Thermal Characteristics,
Thermocouple Soldered to Cathode
6
5
Unit
°C/W
°C/W
Note:
4. The thermal resistances (RθJA & ψJL) are characterized with device mounted on the following FR4 printed circuit
boards, as shown in Figure 1 and Figure 2. PCB size: 76.2 x 114.3 mm. Minimum land pattern size: 4.9 x 4.8 mm
(big pattern, x1), 1.4 x 1.52 mm (small pattern, x2). Maximum land pattern size: 30 x 30 mm (pattern, x2).
Force line trace size = 55 mils, sense line trace size = 4 mils.
F
S
F
S
F
S
F
S
F
S
Figure 1. Minimum Land Pattern of 2 oz Copper
© 2014 Fairchild Semiconductor Corporation
FSV1045V Rev. 1.1
Figure 2. Maximum Land Pattern of 2 oz Copper
www.fairchildsemi.com
2
FSV1045V — 10 A, 45 V Ultra-Low VF Schottky Rectifier
Absolute Maximum Ratings(1)
Values are at TA = 25°C unless otherwise noted.
Symbol
VBR
Parameter
Breakdown Voltage
Conditions
IT = 500 μA
IF = 1 A
VF
Forward Voltage Drop
IF = 1 A
TA = 125°C
IF = 10 A
IR
Maximum Leakage
© 2014 Fairchild Semiconductor Corporation
FSV1045V Rev. 1.1
V = VRWM
Typ.
Max.
45
TA = 25°C
IF = 10 A
Min.
Unit
V
0.28
0.41
0.44
0.18
0.36
0.39
TA = 25°C
0.065
0.220
TA = 125°C
19
32
V
mA
www.fairchildsemi.com
3
FSV1045V — 10 A, 45 V Ultra-Low VF Schottky Rectifier
Electrical Characteristics
100000
10
o
1
Reverse Current, IR[uA]
Forward Current, IF[A]
TA= 150 C
o
TA= 125 C
o
TA= 25 C
0.1 T = 85oC
A
o
TA= -55 C
0.01
10000
1000
o
o
TA=85 C
TA=125 C
100
o
10
TA=25 C
1
0.1
0.01
1E-3
0.0
1E-3
0.1
0.2
0.3
0.4
0.5
o
TA=-55 C
10
15
Forward Voltage, VF[V]
30
35
40
45
12
Average Current, [A]
Junction Capacitance, CJ[pF]
25
Figure 4. Typical Reverse Characteristics
10000
1000
ψjl (30mm x 30mm Pad)
10
8
ψjl (Min. Pad)
6
θja (30mm x 30mm Pad)
4
2
1
10
0
100
Reverse Voltage, VR[V]
Figure 5. Typical Junction Capacitance
Peak Forward Surge Current, IFSM[A]
20
Reverse Voltage, VR[V]
Figure 3. Forward Current Characteristics
100
o
TA=150 C
θja (Min. Pad)
0
25
50
75
100
125
150
o
Ambient / Lead Temperature, [ C]
175
Figure 6. Forward Current Derating Curve
350
300
250
200
150
100
50
0
0
20
40
60
80
100
Number of Cycles
Figure 7. Surge Current Derating Curve
© 2014 Fairchild Semiconductor Corporation
FSV1045V Rev. 1.1
www.fairchildsemi.com
4
FSV1045V — 10 A, 45 V Ultra-Low VF Schottky Rectifier
Typical Performance Characteristics
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© 2014 Fairchild Semiconductor Corporation
FSV1045V Rev. 1.1
www.fairchildsemi.com
5
FSV1045V — 10 A, 45 V Ultra-Low VF Schottky Rectifier
Physical Dimension
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Advance Information
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First Production
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Datasheet contains the design specifications for product development. Specifications may change
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Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I74
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