FESD05P30ZL - Fairchild Semiconductor

FESD05P30ZL
5 V, 30 pF Unidirectional ESD Protector
Features
Description
• IEC61000-4-2, ±30 kV Contact, ±30 kV Air
• IEC61000-4-5, IPP = 5 A (8/20 μs)
• Expanded Working Voltage,
VRWM = 5.0 V +10% =5.5 V
• Very Low Clamping Voltage,
VC =8.8 V at 5 A (Typical)
• Ultra Small SOD882 Package
• Fits Solder Pad of 0402 and DFN 2L
• RoHS Compliant and Halogen Free
• Qualified with IR Reflow and Wave Soldering
The FESD05P30ZL ESD protector offers break through
size and clamping performance. The device is capable of
suppressing up to 50 W of 8 x 20 μsec peak pulse power.
It turns on at typical 6.5 V and clamp at 8.8 V in a 5 A
surge. It responses fast and effective against to ESD/
Surge events.
Applications
•
•
•
•
Mobile and Portable Devices
Space Constrained Systems
USB 5 V Power Protections
General-Purpose ESD Protection in 5 V Applications
The design has been specifically optimized for 5 V applications. It can be operated at 5 V with 10% tolerance. It is
also RoHS compliant and Halogen Free.
All this capability is packed into a small, flat package, optimized for space constrained applications with similar XY
dimensions to a industrial standard 0402 or SOD923. The
FESDxZL family supports a max Z dimension of 0.5 mm.
It is therefore specifically designed to support low clearance applications.
Cathode
Anode
Ordering Information
Part Number
Top Mark
Package
Packing Method
FESD05P30ZL
A
SOD882
Tape and Reel
© 2014 Fairchild Semiconductor Corporation
FESD05P30ZL Rev. 1.0.0
www.fairchildsemi.com
FESD05P30ZL — 5 V, 30 pF Unidirectional ESD Protector
October 2014
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
PD
ESD
TJ
TSTG
Parameter
Total Power Dissipation
Electrostatic Discharge
Capability
Value
Unit
250
mW
IEC61000-4-2 Contact
±30
IEC61000-4-2 Air
±30
kV
Operating Junction Temperature Range
-55 to +150
°C
Storage Temperature Range
-55 to +150
°C
Note:
1. All tests conducted at TA = TJ = 25°C unless otherwise noted.
Electrical Breakdown Characteristics(2), (3)
Values are at TA = 25°C unless otherwise noted.
Symbol
VBR
VRWM
IR
Parameter
Conditions
Min.
Typ.
Max.
Unit
Breakdown Voltage
IT = 1 mA
Reverse Standoff Voltage
IT ≤ 1 μA
6.2
5.5
V
V
Maximum Leakage
VR = 5.0 V
0.5
μA
Max.
Unit
Notes:
2. All tests conducted at TA = TJ = 25°C unless otherwise noted.
3. IT = 300 μsec square wave current pulse.
Surge Response Characteristics(4)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
TLP Surge Response
RD
Dynamic Resistance
TLP, tP = 100 ns,
Cathode to Anode
0.31
Ω
5
A
8 x 20 μsec Exponential Current Surge Response
IEC61000-4-5,
8 x 20 μsec Current Surge
IPP
Test Surge Current
VC
Clamping Voltage
IPP = 5 A
8.8
V
RD
Dynamic Resistance
Calculated at IPP
0.47
Ω
Peak Pulse Power
Calculated (IPPM x VC)
50
W
Junction Capacitance
VR = 0 V, f = 1 MHz
31
PPPM
CJ
38
pF
Note:
4. All tests conducted at TA = TJ = 25°C unless otherwise noted.
© 2014 Fairchild Semiconductor Corporation
FESD05P30ZL Rev. 1.0.0
www.fairchildsemi.com
2
FESD05P30ZL — 5 V, 30 pF Unidirectional ESD Protector
Absolute Maximum Ratings(1)
FESD05P30ZL — 5 V, 30 pF Unidirectional ESD Protector
Typical Performance Characteristics
10.0
Clamping Voltage, VC [V]
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
0
1
2
3
4
5
6
Peak Pulse Current, IPP [A]
Figure 2. 8 x 20 μsec Pulse Waveform
Figure 1. Clamping Voltage vs. Peak Pulse Current
Power (8 x 20μs waveform )
Typical Leakate Current, IR [nA]
12
TLP Current, [A]
10
8
6
4
2
0
0
2
4
6
8
10
12
14
TLP Voltage, [V]
120
100
VR = 5 V
80
60
40
20
0
-50
0
50
100
150
o
Ambient Temperature, TA [ C]
Figure 3. Transmission Line Pulsing (TLP) Plot
Figure 4. Leakage Current vs. Temperature
35
Typical Capacitance, CJ [pF]
o
TA = 25 C
30
25
20
15
10
0
1
2
3
4
5
6
Reverse Voltage, vR [V]
Figure 5. Typical Capacitance
© 2014 Fairchild Semiconductor Corporation
FESD05P30ZL Rev. 1.0.0
www.fairchildsemi.com
3
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Figure 6. 2-LEAD, SOD882, 0.60 x 1.00 MM BODY, 0.65 MM PITCH
© 2014 Fairchild Semiconductor Corporation
FESD05P30ZL Rev. 1.0.0
www.fairchildsemi.com
4
FESD05P30ZL — 5 V, 30 pF Unidirectional ESD Protector
Physical Dimension
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Rev. I71
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