KSP44 / KSP45 NPN Epitaxial Silicon Transistor Features • High-Voltage Transistor • Collector-Emitter Voltage: VCEO = KSP44: 400 V KSP45: 350 V TO-92 12 3 Straight Lead Bulk Packing 1 2 1. Emitter 2. Base 3. Collector 3 Bent Lead Tape & Reel Ammo Packing Ordering Information Part Number Top Mark Package Packing Method KSP44BU KSP44 TO-92 3L Bulk KSP44TA KSP44 TO-92 3L Ammo KSP44TF KSP44 TO-92 3L Tape and Reel KSP45TA KSP45 TO-92 3L Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Value KSP44 500 KSP45 400 KSP44 400 KSP45 350 Unit V V 6 V IC Collector Current 300 mA TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to 150 °C © 2002 Fairchild Semiconductor Corporation KSP44 / KSP45 Rev. 1.6 www.fairchildsemi.com KSP44 / KSP45 — NPN Epitaxial Silicon Transistor September 2015 Values are at TA = 25°C unless otherwise noted. Symbol PD Parameter Power Dissipation Value Unit TA = 25°C 625 mW TC = 25°C 1.5 W RθJC Thermal Resistance, Junction-to-Case 83.3 °C/W RθJA Thermal Resistance, Junction-to-Ambient 200 °C/W Note: 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions BVCBO Collector-Base Breakdown Voltage KSP44 BVCEO Collector-Emitter Breakdown Voltage(2) KSP44 BVEBO Emitter-Base Breakdown Voltage ICBO Collector Cut-Off Current ICES Collector Cut-Off Current IEBO Emitter Cut-Off Current hFE VCE(sat) VBE(sat) Cob KSP45 KSP45 IC = 100 μA, IE = 0 IC = 1 mA, IB = 0 IE = 100 μA, IC = 0 Min. Max. 500 V 400 400 V 350 6 V KSP44 VCB = 400 V, IE = 0 0.1 KSP45 VCB = 320 V, IE = 0 0.1 KSP44 VCE = 400 V, IB = 0 0.5 KSP45 VCE = 320 V, IB = 0 0.5 VEB = 4 V, IC = 0 DC Current Gain(2) 0.1 VCE = 10 V, IC = 1 mA 40 VCE = 10 V, IC = 10 mA 50 VCE = 10 V, IC = 50 mA 45 VCE = 10 V, IC = 100 mA 40 Unit μA μA μA 200 IC = 1 mA, IB = 0.1 mA 0.40 IC = 10 mA, IB = 1 mA 0.50 IC = 50 mA, IB = 5 mA 0.75 Base-Emitter Saturation Voltage(2) IC = 10 mA, IB = 1 mA 0.75 V Output Capacitance VCB = 20 V, IE = 0, f = 1 MHz 7 pF Collector-Emitter Saturation Voltage(2) V Note: 2. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%. © 2002 Fairchild Semiconductor Corporation KSP44 / KSP45 Rev. 1.6 www.fairchildsemi.com 2 KSP44 / KSP45 — NPN Epitaxial Silicon Transistor Thermal Characteristics(1) 160 10 VCE=10V VCC=150V IC/IB=10 Ta=25℃ VBE(off)=4V 140 100 80 t[us], TIME hFE, DC CURRENT GAIN 120 60 40 1 20 0 tf -20 td -40 1 10 100 1000 0.1 10000 1 10 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC Current Gain Figure 2. Turn-On Switching Times 1000 100 Ta=25℃ f=1MHz Cib[pF],Cob[pF], CAPACITANCE VCC=150V IC/IB=10 Ta=25℃ t[us], TIME 10 ts 1 tf 1 10 100 Cib 10 100 Figure 3. Turn-Off Switching Times VCE[V] COLLECTOR EMITTER VOLTAGE 0.8 [V], VOLTAGE VBE(sat) @IC/IB=10 VBE(on) @VCE=10V 0.4 0.0 0.1 VCE(sat)@IC/IB=10 1 10 100 100 0.5 IC=10mA IC=1mA 1000 IC=50mA Ta=25℃ 0.4 0.3 0.2 0.1 0.0 10 1000 100 1000 10000 100000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 5. On Voltage © 2002 Fairchild Semiconductor Corporation KSP44 / KSP45 Rev. 1.6 10 Figure 4. Capacitance Ta=25℃ 0.2 1 VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT 0.6 Cob 1 0.1 0.1 1.0 100 Figure 6. Collector Saturation Region www.fairchildsemi.com 3 KSP44 / KSP45 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics 100000 Valid for Duty Cycle ≤ 10% VCE=10V f=10MHz Ta=25℃ IC[mA], COLLECTOR CURRENT hFE, SMALL SIGNAL CURRENT GAIN 100 10 1 0.1 0.1 10000 1000 1s Tc 100 Ta 10 100 IC[mA], COLLECTOR CURRENT 10 100 1000 10000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 7. High-Frequency Current Gain © 2002 Fairchild Semiconductor Corporation KSP44 / KSP45 Rev. 1.6 =2 5℃ MSPA44 1 1000 =2 5℃ 10 1 1 100us 1ms Figure 8. Safe Operating Area www.fairchildsemi.com 4 KSP44 / KSP45 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics (Continued) KSP44 / KSP45 — NPN Epitaxial Silicon Transistor Physical Dimensions Figure 9. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type © 2002 Fairchild Semiconductor Corporation KSP44 / KSP45 Rev. 1.6 www.fairchildsemi.com 5 KSP44 / KSP45 — NPN Epitaxial Silicon Transistor Physical Dimensions (Continued) Figure 10. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type © 2002 Fairchild Semiconductor Corporation KSP44 / KSP45 Rev. 1.6 www.fairchildsemi.com 6 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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