MB1S - Fairchild Semiconductor

MB1S - MB8S
0.5 A Bridge Rectifiers
Features
Description
• Low-Leakage
The MB family of bridge rectifiers is a 0.5 A rectifier family that achieves high surge current absorption within a
very small foot print. Within its small 35 mm2 form factor,
the MB family shines in its surge capability. In order to
absorb high surge currents, the design supports a 35 A
IFSM rating and a 5.0 A2Sec I2T rating. Devices in the
family are also rated to breakdown voltages of up to
1000 V. These features make the MB family ideal for
small power supplies that need a little extra surge capability.
For higher IFAV current ratings, lower profile packaging,
or lower VF values, explore the Fairchild MDB family of
bridge rectifiers. For improved VF and efficiency values
in the MB package or even higher surge capability, ask
about Fairchild’s pending MBxSV family.
• Surge Overload Rating: 35 A peak
• Ideal for Printed Circuit Board
• UL Certified: UL #E258596
4
SOIC-4
3
~
+
~
+
+
~
~2
1
Polarity symbols molded
or mark on body
Ordering Informations
Part Number
Marking
MB1S
MB1S
MB2S
MB2S
MB4S
MB4S
MB6S
MB6S
MB8S
MB8S
© 2007 Fairchild Semiconductor Corporation
MB1S - MB8S Rev. 1.2.3
Package
Packing Method
SOIC-4
Tape and Reel
www.fairchildsemi.com
1
MB1S - MB8S — 0.5 A Bridge Rectifiers
April 2014
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Value
Parameter
MB1S MB2S MB4S MB6S MB8S
Unit
VRRM
Maximum Repetitive Reverse Voltage
100
200
400
600
800
V
VRMS
Maximum RMS Bridge Input Voltage
70
140
280
420
560
V
DC Reverse Voltage (Rated VR)
100
200
400
600
800
VR
V
IF(AV)
Average Rectified Forward Current at TA = 50°C
0.5
A
IFSM
Non-Repetitive Peak Forward Surge Current:
8.3 ms Single Half-Sine-Wave
35
A
TSTG
Storage Temperature Range
-55 to +150
°C
Operating Junction Temperature Range
-55 to +150
°C
Value
Unit
1.4
W
85
°C/W
20
°C/W
Value
Unit
IF = 0.5 A
1.0
V
TA = 25°C
5.0
μA
TA = 125°C
0.5
mA
TJ
Thermal Characteristics
Symbol
PD
RθJA
RθJL
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient, per
Thermal Resistance, Junction to Lead, per
Leg(1)
Leg(1)
Note:
1. Device mounted on PCB with 0.5 x 0.5 inch (13 x 13 mm) lead length.
Electrical Characteristics
Values are at TA = 25°C unless otherwise specified.
Symbol
Parameter
VF
Forward Voltage, per Bridge
IR
Reverse Current, per Leg at Rated VR
2
2
Conditions
I t
I t Rating for Fusing
t < 8.3 ms
5.0
A2s
CT
Total Capacitance, per Leg
VR = 4.0 V,
f = 1.0 MHz
13
pF
© 2007 Fairchild Semiconductor Corporation
MB1S - MB8S Rev. 1.2.3
www.fairchildsemi.com
2
MB1S - MB8S — 0.5 A Bridge Rectifiers
Absolute Maximum Ratings
Forward Current, IF [A]
10
1
0.1
0.01
0.4
35
0.8
1
1.2
Forward Voltage, VF [V]
1.4
10
30
T C = 100 º C
25
20
15
10
5
0
0.6
Figure 2. Forward Voltage Characteristics
Reverse Current, IR [mA]
Peak Forward Surge Current, IFSM [A]
Figure 1. Derating Curve for Output Rectified Current
TA = 25º C
μs
Pulse Width = 300μ
2% Duty Cycle
1
2
5
10
20
Number of Cycles at 60Hz
50
0.1
TA = 25 º C
0.01
100
Figure 3. Non-Repetitive Surge Current
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage [%]
Figure 4. Reverse Current vs. Reverse Voltage
© 2007 Fairchild Semiconductor Corporation
MB1S - MB8S Rev. 1.2.3
1
www.fairchildsemi.com
3
MB1S - MB8S — 0.5 A Bridge Rectifiers
Typical Performance Characteristics
MB1S - MB8S — 0.5 A Bridge Rectifiers
Physical Dimensions
SOIC-4
0.13
C B A
0.13 C A B
0.10 C
Figure 5. 4-LEAD, SOIC, JEDEC TO269AA, 3.95 MM WIDE BODY (Active)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/M0/M04A.pdf.
© 2007 Fairchild Semiconductor Corporation
MB1S - MB8S Rev. 1.2.3
www.fairchildsemi.com
4
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Advance Information
Formative / In Design
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First Production
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Obsolete
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Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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Rev. I68
© Fairchild Semiconductor Corporation
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