MMPQ6700 - Quad NPN and PNP General-Purpose Amplifier

MMPQ6700
Quad NPN and PNP General-Purpose Amplifier
Description
These complementary devices can be used in switches
with collector currents of 10 μA to 100 mA. These
devices are best used when space is the primary consideration. Sourced from process 23 and 66. See 2N3904
(NPN) and 2N3906 (PNP) for characteristics.
E1
B1
E2
SOIC-16
Mark: MMPQ6700
B2
E3
B3
E4
pin #1 C1
E1
B1
E2
B2
E3
B3
E4
B4
C1
C1
C2
C2
C3
C3
C4
C4
B4
C2
C1
C3
C2
C4
C4
C3
Figure 1. Device Package
Figure 2. Internal Connection
Ordering Information
Part Number
Top Mark
Package
Packing Method
MMPQ6700
MMPQ6700
SOIC 16L
Tape and Reel
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
40
V
VEBO
Emitter-Base Voltage
5.0
V
200
mA
-55 to 150
°C
IC
TJ, TSTG
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
© 1997 Fairchild Semiconductor Corporation
MMPQ6700 Rev. 1.5
www.fairchildsemi.com
MMPQ6700 — Quad NPN and PNP General-Purpose Amplifier
January 2015
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
RθJA
Parameter
Max.
Total Device Dissipation
1000
mW
8.0
mW/°C
Effective 4 Dies
125
°C/W
Each Die
240
°C/W
Derate Above 25°C
Thermal Resistance, Junction-to-Ambient
Unit
Note:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Max.
Unit
BVCEO
Collector-Emitter Breakdown Voltage(4) IC = 10 mA, IB = 0
40
V
BVCBO
Collector-Base Breakdown Voltage
IC = 10 μA, IE = 0
40
V
BVEBO
Emitter-Base Breakdown Voltage
IE = 10 μA, IC = 0
5.0
V
ICBO
Collector Cut-Off Current
VCB = 30 V, IE = 0
50
nA
IEBO
Emitter Cut-Off Current
VEB = 4.0 V, IC = 0
50
nA
IC = 10 mA, IB = 1.0 mA
0.25
V
hFE
VCE(sat)
VBE(sat)
DC Current
Gain(4)
Collector-Emitter Saturation
Base-Emitter Saturation
Voltage(4)
Voltage(4)
VCE = 1.0 V, IC = 0.1 mA
30
VCE = 1.0 V, IC = 1.0 mA
50
VCE = 1.0 V, IC = 10 mA
70
IC = 10 mA, IB = 1.0 mA
0.9
V
Cob
Output Capacitance
VCB = 5.0 V, f = 100 kHz
4.5
pF
Cib
Input Capacitance
VBE = 0.5 V, f = 100 kHz
fT
Current Gain Bandwidth Product
IC = 10 mA, VCE = 20 V,
f = 100 MHz
PNP
10
NPN
8.0
200
pF
MHz
Note:
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
© 1997 Fairchild Semiconductor Corporation
MMPQ6700 Rev. 1.5
www.fairchildsemi.com
2
MMPQ6700 — Quad NPN and PNP General-Purpose Amplifier
Thermal Characteristics(3)
MMPQ6700 — Quad NPN and PNP General-Purpose Amplifier
Physical Dimensions
10.00
9.80
A
8.89
16
9
B
4.00
3.80
6.00
PIN ONE
INDICATOR
1.75
1
5.6
8
0.51
0.35
1.27
(0.30)
0.25
M
1.27
C B A
0.65
LAND PATTERN RECOMMENDATION
1.75 MAX
1.50
1.25
SEE DETAIL A
0.25
0.10
C
0.25
0.19
0.10 C
0.50
0.25 X 45°
NOTES: UNLESS OTHERWISE SPECIFIED
(R0.10)
GAGE PLANE
A) THIS PACKAGE CONFORMS TO JEDEC
MS-012, VARIATION AC, ISSUE C.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD
FLASH AND TIE BAR PROTRUSIONS
D) CONFORMS TO ASME Y14.5M-1994
E) LANDPATTERN STANDARD: SOIC127P600X175-16AM
F) DRAWING FILE NAME: M16AREV12.
(R0.10)
0.36
8°
0°
SEATING PLANE
0.90
0.50
(1.04)
DETAIL A
SCALE: 2:1
Figure 3. 16-LEAD, SOIC, JEDEC MS-012, 0.150 inch, NARROW BODY
© 1997 Fairchild Semiconductor Corporation
MMPQ6700 Rev. 1.5
www.fairchildsemi.com
3
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Definition of Terms
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Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
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Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I73
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