FCD5N60_F085 N-Channel SuperFET® MOSFET 600 V, 4.6 A, 1.1 Ω Features 600V, 4.6A, typ. Rds(on)=860mΩ@VGS=10V D Ultra Low Gate Charge (Typ. Qg = 16 nC) UIS Capability RoHS Compliant D G Qualified to AEC Q101 Applications G S Automotive On Board Charger D-PAK TO-252 (TO-252) Automotive DC/DC Converter for HEV S Description For current package drawing, please refer to the Fairchild web‐ site at http://www.fairchildsemi.com/package‐drawings/TO/ TO252A03.pdf. SuperFETTM is Fairchild’s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is suitable for various automotive DC/DC power conversion. MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol VDSS Drain-to-Source Voltage VGS ID EAS PD Parameter Ratings 600 Units V ±30 V Gate-to-Source Voltage Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C 4.6 Pulsed Drain Current TC = 25°C See Figure 4 Single Pulse Avalanche Energy (Note 1) 29 Power Dissipation Derate Above 25oC TJ, TSTG Operating and Storage Temperature RθJC Thermal Resistance, Junction to Case RθJA Maximum Thermal Resistance, Junction to Ambient A mJ 54 W 1.56 W/oC -55 to + 150 oC 2.3 oC/W 83 oC/W (Note 2) Notes: 1: Starting TJ = 25°C, L = 10mH, IAS = 2.4A, VDD = 100V during inductor charging and VDD = 0V during time in avalanche. 2: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJAis determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. Package Marking and Ordering Information Device Marking FCD5N60 Device FCD5N60_F085 ©2015 Fairchild Semiconductor Corporation FCD5N60_F085 Rev. 1.0 Package D-PAK(TO-252) 1 Reel Size 13” Tape Width 16mm Quantity 2500units www.fairchildsemi.com FCD5N60_F085 N-Channel SuperFET® MOSFET July 2015 Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain-to-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Leakage Current ID = 250μA, VGS = 0V 600 - - V - - 1 μA - - 10 μA - - ±100 nA VDS=600V, TJ = 25oC VGS = 0V TJ = 150oC (Note 4) VGS = ±30V On Characteristics VGS(th) RDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250μA ID = 4.6A, VGS= 10V 3.0 - 5.0 V - 0.86 1.1 Ω - 2.5 3.2 Ω TJ = 25oC TJ = 150oC (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance f = 1MHz Qg(ToT) Total Gate Charge VGS = 0 to 10V Qg(th) Threshold Gate Charge VGS = 0 to 2V - 1.0 - nC Qgs Gate-to-Source Gate Charge - 3.2 - nC Qgd Gate-to-Drain “Miller“ Charge - 7.6 - nC ns VDS = 25V, VGS = 0V, f = 1MHz VDD = 480V ID = 4.6A - 570 - pF - 280 - pF - 20 - pF - 1.9 - Ω - 16 21 nC Switching Characteristics ton Turn-On Time - - 84 td(on) Turn-On Delay - 18 - ns tr Rise Time - 19 - ns td(off) Turn-Off Delay - 48 - ns tf Fall Time - 13 - ns toff Turn-Off Time - - 178 ns VDD = 300V, ID = 4.6A, VGS = 10V, RGEN = 25Ω Drain-Source Diode Characteristics VSD Source-to-Drain Diode Voltage ISD = 4.6A, VGS = 0V - - 1.25 V trr Reverse-Recovery Time - 190 250 ns Qrr Reverse-Recovery Charge VDD = 480V, IF = 4.6A, dISD/dt = 100A/μs - 1.7 2.2 μC Note: 4: The maximum value is specified by design at TJ = 150°C. Product is not tested to this condition in production. ©2015 Fairchild Semiconductor Corporation FCD5N60_F085 Rev. 1.0 2 www.fairchildsemi.com FCD5N60_F085 N-Channel SuperFET® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted. 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 8 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 TC, CASE TEMPERATURE(oC) VGS = 10V CURRENT LIMITED BY PACKAGE 6 4 2 0 150 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 Figure 2. Maximum Continuous Drain Current vs. Case Temperature Figure 1. Normalized Power Dissipation vs. Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 0.1 DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 100 TC = 25oC VGS = 10V FOR TEMPERATURES IDM, PEAK CURRENT (A) ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 150 - TC I = I2 125 10 SINGLE PULSE 1 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability ©2015 Fairchild Semiconductor Corporation FCD5N60_F085 Rev. 1.0 3 www.fairchildsemi.com FCD5N60_F085 N-Channel SuperFET® MOSFET Typical Characteristics VGS, GATE TO SOURCE VOLTAGE(V) ID, DRAIN CURRENT (A) 100 10 10us 1 100us 0.1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 0.01 1 1ms 10ms 100ms SINGLE PULSE TJ = MAX RATED TC = 25oC 10 100 1000 2000 VDS, DRAIN TO SOURCE VOLTAGE (V) 20 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDD = 20V 12 8 TJ = 25oC 4 TJ = 150oC 3 TJ = -55oC 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) VDD = 240V 4 2 0 0 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 6 4 VGS = 0 V 10 TJ = 150 oC 1 8 VGS 8 16 0.4 TJ = 25 oC 0.6 0.8 1.0 1.2 Figure 8. Forward Diode Characteristics ID, DRAIN CURRENT (A) 10 4 8 12 Qg, GATE CHARGE(nC) VSD, BODY DIODE FORWARD VOLTAGE (V) 80μs PULSE WIDTH Tj=25oC 12 VDD = 360V 6 0.1 0.2 10 Figure 7. Transfer Characteristics 14 VDD =300V 8 20 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 16 ID, DRAIN CURRENT (A) ID = 4.6A Figure 6. Gate Charge vs. Gate to Source Voltage Figure 5. Forward Bias Safe Operating Area 0 10 2 80μs PULSE WIDTH Tj=150oC 7 6 5 VGS 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 4 3 2 1 0 0 0 4 8 12 16 VDS, DRAIN TO SOURCE VOLTAGE (V) 20 0 Figure 9. Saturation Characteristics ©2015 Fairchild Semiconductor Corporation FCD5N60_F085 Rev. 1.0 4 8 12 16 VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 10. Saturation Characteristics 4 www.fairchildsemi.com FCD5N60_F085 N-Channel SuperFET® MOSFET Typical Characteristics ID = 4.6A 5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (Ω) 6 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 4 3 TJ = 150oC 2 1 TJ = 25oC 0 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 11. RDSON vs. Gate Voltage 2.5 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 2.0 1.5 1.0 ID = 4.6A VGS = 10V 0.5 0.0 -80 -40 0 40 80 120 TJ, JUNCTION TEMPERATURE(oC) 160 Figure 12. Normalized RDSON vs. Junction Temperature 1.2 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.4 3.0 VGS = VDS ID = 250μA 1.2 ID = 1mA 1.1 1.0 1.0 0.8 0.9 0.6 0.4 -80 -40 0 40 80 120 TJ, JUNCTION TEMPERATURE(oC) 0.8 -80 160 Figure 13. Normalized Gate Threshold Voltage vs. Temperature -40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC) 160 Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature Figure 16. CAPACITANCE (pF) 10000 1000 Ciss 100 Coss 10 f = 1MHz VGS = 0V 1 0.1 Crss 1 10 100 1000 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 15. Capacitance vs. Drain to Source Voltage ©2015 Fairchild Semiconductor Corporation FCD5N60_F085 Rev. 1.0 5 www.fairchildsemi.com FCD5N60_F085 N-Channel SuperFET® MOSFET Typical Characteristics TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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