Data Sheet - Fairchild Semiconductor

FCD5N60_F085
N-Channel SuperFET® MOSFET
600 V, 4.6 A, 1.1 Ω
Features
„ 600V, 4.6A, typ. Rds(on)[email protected]=10V
D
„ Ultra Low Gate Charge (Typ. Qg = 16 nC)
„ UIS Capability
„ RoHS Compliant
D
G
„ Qualified to AEC Q101
Applications
G
S
„ Automotive On Board Charger
D-PAK
TO-252
(TO-252)
„ Automotive DC/DC Converter for HEV
S
Description
For current package drawing, please refer to the Fairchild web‐
site at http://www.fairchildsemi.com/package‐drawings/TO/
TO252A03.pdf.
SuperFETTM is Fairchild’s proprietary new generation of high
voltage MOSFETs utilizing an advanced charge balance
mechanism for outstanding low on-resistance and lower gate
charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is suitable for various automotive DC/DC
power conversion.
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
VDSS
Drain-to-Source Voltage
VGS
ID
EAS
PD
Parameter
Ratings
600
Units
V
±30
V
Gate-to-Source Voltage
Drain Current - Continuous (VGS=10) (Note 1)
TC = 25°C
4.6
Pulsed Drain Current
TC = 25°C
See Figure 4
Single Pulse Avalanche Energy
(Note 1)
29
Power Dissipation
Derate Above 25oC
TJ, TSTG Operating and Storage Temperature
RθJC
Thermal Resistance, Junction to Case
RθJA
Maximum Thermal Resistance, Junction to Ambient
A
mJ
54
W
1.56
W/oC
-55 to + 150
oC
2.3
oC/W
83
oC/W
(Note 2)
Notes:
1: Starting TJ = 25°C, L = 10mH, IAS = 2.4A, VDD = 100V during inductor charging and VDD = 0V during time in avalanche.
2: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface of the drain pins. RθJC is guaranteed by design, while RθJAis determined by the board design. The maximum rating
presented here is based on mounting on a 1 in2 pad of 2oz copper.
Package Marking and Ordering Information
Device Marking
FCD5N60
Device
FCD5N60_F085
©2015 Fairchild Semiconductor Corporation
FCD5N60_F085 Rev. 1.0
Package
D-PAK(TO-252)
1
Reel Size
13”
Tape Width
16mm
Quantity
2500units
www.fairchildsemi.com
FCD5N60_F085 N-Channel SuperFET® MOSFET
July 2015
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain-to-Source Breakdown Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Leakage Current
ID = 250μA, VGS = 0V
600
-
-
V
-
-
1
μA
-
-
10
μA
-
-
±100
nA
VDS=600V, TJ = 25oC
VGS = 0V
TJ = 150oC (Note 4)
VGS = ±30V
On Characteristics
VGS(th)
RDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VGS = VDS, ID = 250μA
ID = 4.6A,
VGS= 10V
3.0
-
5.0
V
-
0.86
1.1
Ω
-
2.5
3.2
Ω
TJ = 25oC
TJ = 150oC (Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
f = 1MHz
Qg(ToT)
Total Gate Charge
VGS = 0 to 10V
Qg(th)
Threshold Gate Charge
VGS = 0 to 2V
-
1.0
-
nC
Qgs
Gate-to-Source Gate Charge
-
3.2
-
nC
Qgd
Gate-to-Drain “Miller“ Charge
-
7.6
-
nC
ns
VDS = 25V, VGS = 0V,
f = 1MHz
VDD = 480V
ID = 4.6A
-
570
-
pF
-
280
-
pF
-
20
-
pF
-
1.9
-
Ω
-
16
21
nC
Switching Characteristics
ton
Turn-On Time
-
-
84
td(on)
Turn-On Delay
-
18
-
ns
tr
Rise Time
-
19
-
ns
td(off)
Turn-Off Delay
-
48
-
ns
tf
Fall Time
-
13
-
ns
toff
Turn-Off Time
-
-
178
ns
VDD = 300V, ID = 4.6A,
VGS = 10V, RGEN = 25Ω
Drain-Source Diode Characteristics
VSD
Source-to-Drain Diode Voltage
ISD = 4.6A, VGS = 0V
-
-
1.25
V
trr
Reverse-Recovery Time
-
190
250
ns
Qrr
Reverse-Recovery Charge
VDD = 480V, IF = 4.6A,
dISD/dt = 100A/μs
-
1.7
2.2
μC
Note:
4: The maximum value is specified by design at TJ = 150°C. Product is not tested to this condition in production.
©2015 Fairchild Semiconductor Corporation
FCD5N60_F085 Rev. 1.0
2
www.fairchildsemi.com
FCD5N60_F085 N-Channel SuperFET® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted.
1.0
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
8
1.2
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
TC, CASE TEMPERATURE(oC)
VGS = 10V
CURRENT LIMITED
BY PACKAGE
6
4
2
0
150
25
50
75
100
125
150
TC, CASE TEMPERATURE(oC)
175
Figure 2. Maximum Continuous Drain Current vs.
Case Temperature
Figure 1. Normalized Power Dissipation vs. Case
Temperature
NORMALIZED THERMAL
IMPEDANCE, ZθJC
2
1
0.1
DUTY CYCLE - DESCENDING ORDER
D = 0.50
0.20
0.10
0.05
0.02
0.01
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TC
SINGLE PULSE
0.01
-5
10
-4
10
-3
-2
-1
0
10
10
10
t, RECTANGULAR PULSE DURATION(s)
1
10
10
Figure 3. Normalized Maximum Transient Thermal Impedance
100
TC = 25oC
VGS = 10V
FOR TEMPERATURES
IDM, PEAK CURRENT (A)
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
150 - TC
I = I2
125
10
SINGLE PULSE
1
-5
10
-4
10
-3
-2
-1
10
10
10
t, RECTANGULAR PULSE DURATION(s)
0
10
1
10
Figure 4. Peak Current Capability
©2015 Fairchild Semiconductor Corporation
FCD5N60_F085 Rev. 1.0
3
www.fairchildsemi.com
FCD5N60_F085 N-Channel SuperFET® MOSFET
Typical Characteristics
VGS, GATE TO SOURCE VOLTAGE(V)
ID, DRAIN CURRENT (A)
100
10
10us
1
100us
0.1 OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
0.01
1
1ms
10ms
100ms
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
10
100
1000 2000
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
IS, REVERSE DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VDD = 20V
12
8
TJ = 25oC
4
TJ = 150oC
3
TJ = -55oC
4
5
6
7
8
9
VGS, GATE TO SOURCE VOLTAGE (V)
VDD = 240V
4
2
0
0
15V Top
10V
8V
7V
6V
5.5V
5V Bottom
6
4
VGS = 0 V
10
TJ = 150 oC
1
8
VGS
8
16
0.4
TJ = 25 oC
0.6
0.8
1.0
1.2
Figure 8. Forward Diode Characteristics
ID, DRAIN CURRENT (A)
10
4
8
12
Qg, GATE CHARGE(nC)
VSD, BODY DIODE FORWARD VOLTAGE (V)
80μs PULSE WIDTH
Tj=25oC
12
VDD = 360V
6
0.1
0.2
10
Figure 7. Transfer Characteristics
14
VDD =300V
8
20
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
16
ID, DRAIN CURRENT (A)
ID = 4.6A
Figure 6. Gate Charge vs. Gate to Source Voltage
Figure 5. Forward Bias Safe Operating Area
0
10
2
80μs PULSE WIDTH
Tj=150oC
7
6
5
VGS
15V Top
10V
8V
7V
6V
5.5V
5V Bottom
4
3
2
1
0
0
0
4
8
12
16
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
0
Figure 9. Saturation Characteristics
©2015 Fairchild Semiconductor Corporation
FCD5N60_F085 Rev. 1.0
4
8
12
16
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 10. Saturation Characteristics
4
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FCD5N60_F085 N-Channel SuperFET® MOSFET
Typical Characteristics
ID = 4.6A
5
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
rDS(on), DRAIN TO SOURCE
ON-RESISTANCE (Ω)
6
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
4
3
TJ = 150oC
2
1
TJ = 25oC
0
5
6
7
8
9
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 11. RDSON vs. Gate Voltage
2.5
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
ID = 4.6A
VGS = 10V
0.5
0.0
-80
-40
0
40
80
120
TJ, JUNCTION TEMPERATURE(oC)
160
Figure 12. Normalized RDSON vs. Junction
Temperature
1.2
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
NORMALIZED GATE
THRESHOLD VOLTAGE
1.4
3.0
VGS = VDS
ID = 250μA
1.2
ID = 1mA
1.1
1.0
1.0
0.8
0.9
0.6
0.4
-80
-40
0
40
80
120
TJ, JUNCTION TEMPERATURE(oC)
0.8
-80
160
Figure 13. Normalized Gate Threshold Voltage vs.
Temperature
-40
0
40
80
120
TJ, JUNCTION TEMPERATURE (oC)
160
Figure 14. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
Figure 16.
CAPACITANCE (pF)
10000
1000
Ciss
100
Coss
10
f = 1MHz
VGS = 0V
1
0.1
Crss
1
10
100
1000
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 15. Capacitance vs. Drain to Source
Voltage
©2015 Fairchild Semiconductor Corporation
FCD5N60_F085 Rev. 1.0
5
www.fairchildsemi.com
FCD5N60_F085 N-Channel SuperFET® MOSFET
Typical Characteristics
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Datasheet contains the design specifications for product development. Specifications
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First Production
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Rev. I75