FDMC86139P P-Channel PowerTrench® MOSFET -100 V, -15 A, 67 mΩ Features General Description Max rDS(on) = 67 mΩ at VGS = -10 V, ID = -4.4 A This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance. Max rDS(on) = 89 mΩ at VGS = -6 V, ID = -3.6 A Very low RDS-on mid voltage P channel silicon technology optimised for low Qg This product is optimised for fast switching applications as well as load switch applications Applications Active Clamp Switch 100% UIL Tested Load Switch RoHS Compliant Top Bottom Pin 1 S D D D S S G S D S D S D G D D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous TC = 25 °C -Continuous TA = 25 °C ID TJ, TSTG ±25 V (Note 1a) -4.4 A -30 Single Pulse Avalanche Energy PD Units V -15 -Pulsed EAS Ratings -100 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 121 40 (Note 1a) Operating and Storage Junction Temperature Range 2.3 -55 to + 150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 3.1 (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC86139P Device FDMC86139P ©2013 Fairchild Semiconductor Corporation FDMC86139P Rev.C2 Package Power 33 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC86139P P-Channel PowerTrench® MOSFET June 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = -80 V, VGS = 0 V -1 μA IGSS Gate to Source Leakage Current VGS = ±25 V, VDS = 0 V ±100 nA -4 V -100 V -63 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C 7 VGS = -10 V, ID = -4.4 A 56 rDS(on) Static Drain to Source On Resistance VGS = -6 V, ID = -3.6 A 69 89 VGS = -10 V, ID = -4.4 A,TJ = 125 °C 87 104 VDS = -10 V, ID = -4.4 A 12 gFS Forward Transconductance -2 -3 mV/°C 67 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = -50 V, VGS = 0 V, f = 1 MHz 0.1 1001 1335 pF 178 240 pF 10 15 pF 1.6 3.2 Ω Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time VDD = -50 V, ID = -4.4 A, VGS = -10 V, RGEN = 6 Ω Qg(TOT) Total Gate Charge VGS = 0 V to -10 V Qg(TOT) Total Gate Charge VGS = 0 V to -6 V Qgs Total Gate Charge Qgd Gate to Drain “Miller” Charge VDD = -50 V, ID = -4.4 A 11 20 ns 2.5 10 ns 17 30 ns 4 10 ns 16 22 nC 9.8 14 nC 4.5 nC 3.2 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -4.4 A (Note 2) -0.84 -1.3 V VGS = 0 V, IS = -1.9 A (Note 2) -0.79 -1.2 V IF = -4.4 A, di/dt = 100 A/μs 70 112 ns 141 225 nC NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 53 °C/W when mounted on a 1 in2 pad of 2 oz copper b) 125 °C/W when mounted on a minimum pad of 2 oz copper SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C; P-ch: L = 3 mH, IAS = -9 A, VDD = -100 V, VGS = -10 V. 100% test at L = 0.1 mH, IAS = -28 A. ©2013 Fairchild Semiconductor Corporation FDMC86139P Rev.C2 2 www.fairchildsemi.com FDMC86139P P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 5 30 VGS = -5.5 V VGS = -6 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) VGS = -10 V 20 VGS = -5 V 10 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = -4.5 V 0 0 1 2 3 4 5 VGS = -4.5 V VGS = -5.5 V 3 2 VGS = -6 V 1 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 250 ID = -4.4 A VGS = -10 V 0.6 -75 30 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 200 ID = -4.4 A 150 TJ = 125 oC 100 50 0 100 125 150 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX TJ = 25 oC 4 TJ, JUNCTION TEMPERATURE (oC) 5 6 7 8 9 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage Figure 3. Normalized On Resistance vs Junction Temperature 50 -IS, REVERSE DRAIN CURRENT (A) 30 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX -ID, DRAIN CURRENT (A) 20 -ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 1.8 VGS = -10 V 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) VDS = -5 V 20 TJ = 150 oC 10 TJ = 25 oC TJ = -55 oC 0 VGS = -5 V 4 2 3 4 5 6 VGS = 0 V 10 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 7 0.2 0.4 0.6 0.8 1.0 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2013 Fairchild Semiconductor Corporation FDMC86139P Rev.C2 3 1.2 www.fairchildsemi.com FDMC86139P P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2000 ID = -4.4 A 1000 VDD = -50 V Ciss 8 CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = -75 V VDD = -25 V 6 4 Coss 100 Crss 10 2 f = 1 MHz VGS = 0 V 0 0 4 8 12 1 0.1 16 Figure 7. Gate Charge Characteristics 100 20 -ID, DRAIN CURRENT (A) -IAS, AVALANCHE CURRENT (A) 10 Figure 8. Capacitance vs Drain to Source Voltage 50 TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 15 VGS = -10 V Limited by Package 10 VGS = -6 V 5 o RθJC = 3.1 C/W 1 0.001 0.01 0.1 1 10 0 25 50 P(PK), PEAK TRANSIENT POWER (W) 100 μs 10 1 ms 1 10 ms THIS AREA IS LIMITED BY rDS(on) 100 ms SINGLE PULSE TJ = MAX RATED 1s RθJA = 125 oC/W 10 s CURVE BENT TO MEASURED DATA 1 10 DC 100 400 125 150 2000 1000 100 10 SINGLE PULSE RθJA = 125 oC/W TA = 25 oC 1 0.5 -4 -3 -2 10 10 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 12. Single Pulse Maximum Power Dissipation Figure 11. Forward Bias Safe Operating Area ©2013 Fairchild Semiconductor Corporation FDMC86139P Rev.C2 100 Figure 10. Maximum Continuous Drain Current vs Case Temperature 40 0.01 TA = 25 oC 0.005 0.1 75 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 0.1 50 o tAV, TIME IN AVALANCHE (ms) -ID, DRAIN CURRENT (A) 1 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 4 www.fairchildsemi.com FDMC86139P P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: ZθJA(t) = r(t) x RθJA RθJA = 125 oC/W Peak TJ = PDM x ZθJA(t) + TA Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0005 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2013 Fairchild Semiconductor Corporation FDMC86139P Rev.C2 5 www.fairchildsemi.com FDMC86139P P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMC86139P P-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. 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