MJD44H11
NPN Epitaxial Silicon Transistor
Features
• General-Purpose Power and Switching such as
Output or Driver Stages in Applications
• D-PAK for Surface-Mount Applications
• Lead-Formed for Surface Mount Application (No Suffix)
• Fast Switching Speeds
• Low Collector Emitter Saturation Voltage
D-PAK
1
1.Base
2.Collector
3.Emitter
Ordering Information
Part Number
Top Mark
Package
Packing Method
MJD44H11TF
MJD44H11
TO-252 3L (DPAK)
Tape and Reel
MJD44H11TM
MJD44H11
TO-252 3L (DPAK)
Tape and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Value
Unit
VCEO
Collector-Emitter Voltage
Parameter
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
8
A
ICP
Collector Current (Pulse)
16
A
TJ
Junction Temperature
150
°C
- 65 to +150
°C
TSTG
Storage Temperature Range
© 2001 Fairchild Semiconductor Corporation
MJD44H11 Rev. 1.2
www.fairchildsemi.com
1
MJD44H11 — NPN Epitaxial Silicon Transistor
April 2015
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
Parameter
Max.
Total Device Dissipation
TC = 25°C
20
TA = 25°C
1.75
Unit
W
RθJC
Thermal Resistance, Junction-to-Case
6.25
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
71.4
°C/W
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
VCEO(sus)
Parameter
Conditions
(1)
Collector-Emitter Sustaining Voltage
IC = 30 mA, IB = 0
Min.
Typ.
Max.
80
Unit
V
ICEO
Collector Cut-Off Current
VCE = 80 V, IB = 0
10
μA
IEBO
Emitter Cut-Off Current
VEB = 5 V, IC = 0
50
μA
hFE
DC Current Gain(1)
(1)
VCE = 1 V, IC = 2 A
60
VCE = 1 V, IC = 4 A
40
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 8 A, IB = 0.4 A
1
V
VBE(sat)
Base-Emitter Saturation Voltage(1)
IC = 8 A, IB = 0.8 A
1.5
V
Current Gain Bandwidth Product
VCE = 10 V, IC = 0.5 A
Cob
Output Capacitance
VCB = 10 V, f = 1 MHz
tON
Turn-On Time
tSTG
Storage Time
fT
tF
Fall Time
IC = 5 A,
IB1 = - IB2 = 0.5 A
50
MHz
130
pF
300
ns
500
ns
140
ns
Note:
1. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%.
© 2001 Fairchild Semiconductor Corporation
MJD44H11 Rev. 1.2
www.fairchildsemi.com
2
MJD44H11 — NPN Epitaxial Silicon Transistor
Thermal Characteristics
100
1000
IC[A], COLLECTOR CURRENT
hFE, DC CURRENT GAIN
VCE = 1V
100
10
ICP(max)
10
0μ
s
50
0μ
s
10
IC(max)
1m
s
5m
s
DC
1
0.1
0.01
1
0.01
0.1
1
1
10
IC[A], COLLECTOR CURRENT
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. DC Current Gain
Figure 2. Safe Operating Area
PC[W], POWER DISSIPATION
25
20
15
10
5
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 3. Power Derating
© 2001 Fairchild Semiconductor Corporation
MJD44H11 Rev. 1.2
www.fairchildsemi.com
3
MJD44H11 — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
MJD44H11 — NPN Epitaxial Silicon Transistor
Physical Dimensions
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Figure 4. 3-LEAD, TO-252, NOT COMPLIANT TO JEDEC TO-252 VAR. AB, SURFACE MOUNT (DPAK)
© 2001 Fairchild Semiconductor Corporation
MJD44H11 Rev. 1.2
www.fairchildsemi.com
4
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Advance Information
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Preliminary
First Production
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Datasheet contains the design specifications for product development. Specifications may change
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Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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The datasheet is for reference information only.
Rev. I74
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www.fairchildsemi.com