FGH75T65UPD 650V, 75A Field Stop Trench IGBT Features • Maximum Junction Temperature : TJ = 175oC General Description • Positive Temperaure Co-efficient for Easy Parallel Operating Using innovative field stop trench IGBT technology, Fairchild’s new series of field-stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power generator where low conduction and switching losses are essential. • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.65 V(Typ.) @ IC = 75 A • 100% of Parts Tested ILM(2) • High Input Impedance • Tightened Parameter Distribution Applications • RoHS Compliant • Solar Inverter, UPS, Digital Power Generator • Short Circuit Ruggedness > 5 us @25oC E C C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol Description Ratings Unit VCES Collector to Emitter Voltage 650 V VGES Gate to Emitter Voltage ±20 V Transient Gate-to-Emitter Voltage IC ICM (1) Collector Current @ TC = 25oC Collector Current @ TC = 100oC ±25 V 150 A 75 A 225 A 25oC Pulsed Collector Current ILM (2) Clamped Inductive Load Current @ TC = 225 A IF Diode Forward Current @ TC = 25oC 75 A Diode Forward Current @ TC = 100oC 50 A 225 A Maximum Power Dissipation @ TC = 25oC 375 W Maximum Power Dissipation @ TC = 100oC 187 W IFM (1) PD Pulsed Diode Maximum Forward Current @ TC = 25oC SCWT Short Circuit Withstand Time 5 us TJ Operating Junction Temperature -55 to +175 oC Tstg Storage Temperature Range -55 to +175 oC TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 oC Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature 2: Ic = 225 A, Vce = 400 V, Rg = 10 Ω Thermal Characteristics Symbol Parameter Typ. Max. Unit RθJC(IGBT) Thermal Resistance, Junction to Case - 0.40 oC/W RθJC(Diode) Thermal Resistance, Junction to Case - 0.86 oC/W RθJA Thermal Resistance, Junction to Ambient - 40 oC/W ©2015 Fairchild Semiconductor Corporation FGH75T65UPD Rev. 1.5 1 www.fairchildsemi.com FGH75T65UPD — 650 V, 75 A Field Stop Trench IGBT March 2015 Part Number Top Mark Package Packing Method FGH75T65UPD FGH75T65UPD TO-247 A03 Tube Electrical Characteristics of the IGBT Symbol Parameter Reel Size Tape Width Quantity N/A N/A 30 TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 650 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA ∆BVCES ∆ΤJ Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 250 uA - 0.65 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 µA IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA 4.0 6.0 7.5 V On Characteristics VGE(th) G-E Threshold Voltage IC = 75 mA, VCE = VGE IC = 75 A, VGE = 15 V - 1.65 2.3 V VCE(sat) Collector to Emitter Saturation Voltage IC = 75 A, VGE = 15 V, TC = 175oC - 2.05 - V - 5665 - pF - 205 - pF - 100 - pF Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time - 32 42 ns tr Rise Time - 43 56 ns td(off) Turn-Off Delay Time - 166 216 ns tf Fall Time - 24 33 ns Eon Turn-On Switching Loss - 2.85 3.68 mJ Eoff Turn-Off Switching Loss - 1.20 1.60 mJ VCC = 400 V, IC = 75 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 25oC Ets Total Switching Loss - 4.05 5.3 mJ td(on) Turn-On Delay Time - 30 - ns tr Rise Time - 57 - ns td(off) Turn-Off Delay Time - 176 - ns tf Fall Time - 21 - ns Eon Turn-On Switching Loss - 4.45 - mJ Eoff Turn-Off Switching Loss - 1.60 - mJ Ets Total Switching Loss - 6.05 - mJ Tsc Short Circuit Withstand Time 5 - - us Qg Total Gate Charge - 385 578 nC Qge Gate to Emitter Charge Qgc Gate to Collector Charge ©2015 Fairchild Semiconductor Corporation FGH75T65UPD Rev. 1.5 VCC = 400 V, IC = 75 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 175oC VGE = 15 V, VCC < 400 V, Rg = 10 Ω VCE = 400 V, IC = 75 A, VGE = 15 V 2 - 45 68 nC - 210 315 nC www.fairchildsemi.com FGH75T65UPD — 650 V, 75 A Field Stop Trench IGBT Package Marking and Ordering Information Symbol Parameter VFM Diode Forward Voltage Erec Reverse Recovery Energy TC = 25°C unless otherwise noted Test Conditions IF = 50 A Min. Typ. Max TC = 25oC - 2.1 2.6 TC = 175oC - 1.7 - TC = 175oC - 40 - o trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge ©2015 Fairchild Semiconductor Corporation FGH75T65UPD Rev. 1.5 IF =50 A, diF/dt = 200 A/µs 3 Units V uJ TC = 25 C - 65 85 TC = 175oC - 127 - TC = 25oC - 120 170 TC = 175oC - 550 - ns nC www.fairchildsemi.com FGH75T65UPD — 650 V, 75 A Field Stop Trench IGBT Electrical Characteristics of the Diode Figure 1. Typical Output Characteristics 225 VGE= 20 V Figure 2. Typical Output Characteristics 225 VGE= 20 V 15 V 15 V Collector Current, IC [A] Collector Current, IC [A] 12 V 180 135 90 10 V 45 180 12 V 135 90 10 V 45 8V 8V 0 0 o o TC = 175 C TC = 25 C 2 4 6 8 Collector-Emitter Voltage, VCE [V] 0 10 Figure 3. Typical Saturation Voltage Characteristics Collector-Emitter Voltage, VCE [V] 175 150 125 100 75 Common Emitter VGE = 15 V 50 o TC = 25 C 25 Common Emitter VGE = 15 V 3.0 150 A 2.5 2.0 75 A 1.5 IC = 40 A o TC = 175 C 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 1.0 25 5 Figure 5. Saturation Voltage vs. VGE 50 75 100 125 150 o Case Temperature, TC [ C] 20 Common Emitter Collector-Emitter Voltage, VCE [V] Common Emitter Collector-Emitter Voltage, VCE [V] 175 Figure 6. Saturation Voltage vs. VGE 20 o TC = 25 C 16 150 A 12 75 A 8 IC = 40 A 4 0 10 3.5 200 Collector Current, IC [A] 2 4 6 8 Collector-Emitter Voltage, VCE [V] Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level 225 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] ©2015 Fairchild Semiconductor Corporation FGH75T65UPD Rev. 1.5 o TC = 175 C 16 150 A 12 75 A 8 IC = 40 A 4 0 20 4 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGH75T65UPD — 650 V, 75 A Field Stop Trench IGBT Typical Performance Characteristics Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics 10000 15 Gate-Emitter Voltage, VGE [V] Capacitance [pF] Cies 1000 Coes Common Emitter VGE = 0 V, f = 1 MHz 100 Cres 12 400 V 200 V 9 6 3 Common Emitter o o TC = 25 C TC = 25 C 50 1 VCC = 300 V 10 Collector-Emitter Voltage, VCE [V] 0 30 Figure 9. Turn-on Characteristics vs. Gate Resistance 0 70 140 210 280 Gate Charge, Qg [nC] 350 420 Figure 10. Turn-off Characteristics vs. Gate Resistance 1000 5000 Common Emitter VCC = 400 V, VGE = 15 V IC = 75 A o o Switching Time [ns] TC = 175 C Switching Time [ns] td(off) 1000 TC = 25 C td(on) 100 tr tf 100 Common Emitter VCC = 400 V, VGE = 15 V IC = 75 A o TC = 25 C o TC = 175 C 10 0 10 20 30 40 Gate Resistance, RG [Ω ] 10 50 Figure 11. Switching Loss vs. Gate Resistance 0 10 20 30 40 Gate Resistance, RG [Ω ] 50 Figure 12. Turn-on Characteristics vs. Collector Current 500 100 Common Emitter VCC = 400 V, VGE = 15 V 100 o TC = 25 C Switching Time [ns] Switching Loss [mJ] IC = 75 A o TC = 175 C Eon 10 Eoff tr td(on) 10 Common Emitter VGE = 15 V, RG = 3 Ω o TC = 25 C o TC = 175 C 1 0 10 20 30 40 1 50 0 Gate Resistance, RG [Ω] ©2015 Fairchild Semiconductor Corporation FGH75T65UPD Rev. 1.5 30 60 90 120 150 Collector Current, IC [A] 5 www.fairchildsemi.com FGH75T65UPD — 650 V, 75 A Field Stop Trench IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Collector Current Figure 14. Switching Loss vs. Collector Current 50 1000 td(off) Switching Loss [mJ] Switching Time [ns] 100 tf 10 Common Emitter VGE = 15 V, RG = 3 Ω 1 10 Eon 1 Common Emitter VGE = 15 V, RG = 3 Ω Eoff o o TC = 25 C TC = 25 C o o TC = 175 C TC = 175 C 0.1 0.1 0 30 60 90 120 150 0 30 Figure 15. Load Current vs. Frequency 180 500 o 120 90 Duty cycle : 50% o T = 100 C C Power Dissipation = 187 W load Current : peak of square wave 10k 100k 100 µs 10 ms 1 ms DC Operation 10 Single Nonrepetitive 1 o Pulse Tc = 25 C Curves must be derated linearly with increase in temperature 0.1 1 1M 10 100 Collector-Emitter Voltage, VCE [V] Switching Frequency, f [Hz] Figure 17. Forward Characteristics Reverse Recovery Currnet, Irr [A] 11 100 Forward Current, IF [A] 1000 Figure 18. Reverse Revovery Current 300 o TC = 175 C 10 o TC = 125 C o TC = 75 C o TC = 25 C 1 150 10 µs IcMAX (Continuous) VCC = 400 V 0 1k 120 IcMAX (Pulsed) 100 Collector Current, Ic [A] Collector Current, IC A] 150 30 90 Figure 16. SOA Characteristics TC = 100 C 60 60 Collector Current, IC [A] Collector Current, IC [A] 0 1 2 3 Forward Voltage, VF [V] ©2015 Fairchild Semiconductor Corporation FGH75T65UPD Rev. 1.5 o TC = 25 C 10 o TC = 175 C diF/dt = 200 A/µs 8 6 100 A/µs 4 diF/dt = 200 A/µs 2 100 A/µs 0 4 0 6 10 20 30 40 50 60 Forward Current, IF [A] 70 80 www.fairchildsemi.com FGH75T65UPD — 650 V, 75 A Field Stop Trench IGBT Typical Performance Characteristics Figure 19. Reverse Recovery Time Figure 20. Stored Charge 200 0.7 o Stored Recovery Charge, Qrr [uC] Reverse Recovery Time, trr [ns] o TC = 25 C o TC = 175 C 160 diF/dt = 100 A/µs 200 A/µs 120 diF/dt = 100 A/µs 80 200 A/µs 40 0 20 40 TC = 25 C 0.6 o TC = 175 C 200 A/µs 0.5 0.4 diF/dt = 100 A/µs 0.3 0.2 200 A/µs 0.1 diF/dt = 100 A/µs 60 0.0 80 0 20 40 60 Forwad Current, IF [A] Forward Current, IF [A] 80 Figure 21. Transient Thermal Impedance of IGBT 0.5 Thermal Response [Zthjc] 0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 single pulse t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 Rectangular Pulse Duration [sec] Figure 22.Transient Thermal Impedance of Diode 2 Thermal Response [Zthjc] 1 0.5 0.2 0.1 0.1 0.01 0.05 0.02 0.01 single pulse PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] ©2015 Fairchild Semiconductor Corporation FGH75T65UPD Rev. 1.5 7 www.fairchildsemi.com FGH75T65UPD — 650 V, 75 A Field Stop Trench IGBT Typical Performance Characteristics FGH75T65UPD — 650 V, 75 A Field Stop Trench IGBT Mechanical Dimensions Figure 23. TO-247, MOLDED, 3 LEAD, JEDEC VARIATION AB (Active) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-003 Dimensions in Millimeters ©2015 Fairchild Semiconductor Corporation FGH75T65UPD Rev. 1.5 8 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2015 Fairchild Semiconductor Corporation FGH75T65UPD Rev. 1.5 9 www.fairchildsemi.com FGH75T65UPD — 650 V, 75 A Field Stop Trench IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower™ F-PFS™ Sync-Lock™ ® FRFET® AX-CAP®* ®* BitSiC™ Global Power ResourceSM PowerTrench® GreenBridge™ PowerXS™ Build it Now™ TinyBoost® Green FPS™ Programmable Active Droop™ CorePLUS™ TinyBuck® CorePOWER™ Green FPS™ e-Series™ QFET® TinyCalc™ Gmax™ QS™ CROSSVOLT™ TinyLogic® GTO™ Quiet Series™ CTL™ TINYOPTO™ Current Transfer Logic™ IntelliMAX™ RapidConfigure™ TinyPower™ ISOPLANAR™ DEUXPEED® ™ TinyPWM™ Marking Small Speakers Sound Louder Dual Cool™ TinyWire™ EcoSPARK® and Better™ Saving our world, 1mW/W/kW at a time™ TranSiC™ EfficentMax™ MegaBuck™ SignalWise™ TriFault Detect™ ESBC™ MICROCOUPLER™ SmartMax™ TRUECURRENT®* MicroFET™ SMART START™ ® µSerDes™ MicroPak™ Solutions for Your Success™ MicroPak2™ SPM® Fairchild® MillerDrive™ STEALTH™ Fairchild Semiconductor® UHC® MotionMax™ SuperFET® FACT Quiet Series™ ® Ultra FRFET™ ® mWSaver SuperSOT™-3 FACT UniFET™ OptoHiT™ SuperSOT™-6 FAST® VCX™ SuperSOT™-8 OPTOLOGIC® FastvCore™ VisualMax™ OPTOPLANAR® SupreMOS® FETBench™ VoltagePlus™ SyncFET™ FPS™ XS™