MMST918 / PN918 Transistors NPN High Frequency Transistor MMST918 / PN918 zExternal dimensions (Unit : mm) zFeatures 1) High current gain-bandwidth product fT=600MHz 2.9±0.2 MMST918 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 MMST918 PN918 SMT3 RVX TO-92 − Marking Code Basic ordering unit (pieces) T146 T93 3000 3000 2.8±0.2 0 ∼ 0.1 (3) ROHM : SMT3 EIAJ : SC-59 +0.1 0.15 −0.06 0.4 +0.1 −0.05 All terminals have same dimensions PN918 4.8±0.2 0.3 ∼ 0.6 Part No. 0.2 1.6+ −0.1 zPackage, marking, and packaging specifications Packaging type (2) (1) (1) Emitter (2) Base (3) Collector 2.5Min. 4.8±0.2 3.7±0.2 Parameter Symbol Limits Unit Collector-base voltage Collector-emitter voltage VCBO VCEO 30 15 V V Emitter-base voltage Collector current MMST918 Collector power dissipation PN918 VEBO IC 3 50 0.2 V A W PC Junction temperature Tj 0.310 150 W °C Storage temperature Tstg −55 to +150 °C (12.7Min.) zAbsolute maximum ratings (Ta = 25°C) 0.5±0.1 ROHM : TO-92 EIAJ : SC-43 (1) (2) (3) 2.5 +0.3 −0.1 5 +0.15 0.45 − 0.05 2.3 (1) Emitter (2) Base (3) Collector zElectrical characteristics (Ta = 25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Parameter BVCBO BVCEO 30 15 − − − − V V IC=1.0µA IC=3.0mA Emitter-base breakdown voltage BVEBO 3.0 − − − 0.01 V IE=10µA − µA VCB=15V − − 1.0 µA VCB=15V , IE=0 , Ta=150°C VCE(sat) VBE(sat) 20 − − − − − − 0.4 1.0 − V V IC=3.0mA , VCE=1.0V IC/IB=10mA/1mA IC/IB=10mA/1mA Transition frequency fT 600 − − MHz Output capacitance Cob − − 1.7 pF − − 3.0 pF Emitter input capacitance Noise figure Cib − − 2.0 pF NF − − 6.0 dB Power gain Output power Collector efficiency Gpe 15 − − dB Collector cutoff current DC current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage ICBO hFE Pout 30 − − mW η 25 − − % Conditions IC=4.0mA , VCE=10V, f=100MHz VCB=10V , IE=0 , f=140kHz VCB=0 , IE=0 , f=140kHz VEB=0.5V , IC=0 , f=140kHz IC=1.0mA , VCE=6.0V ,RG=400Ω , f=60MHz VCB=12V , IC=6.0mA , f=200MHz VCB=15V , IC=8.0mA , f=500MHz VCB=15V , IC=8.0mA , f=500MHz 1/2 MMST918 / PN918 Transistors Ta=25°C 1000 160µA 500 140µA DC CURRENT GAIN : hFE COLLECTOR CURRENT : Ic (mA) 180µA 120µA 100µA 10 80µA 60µA 40µA 200 100 50 20 20µA IB=0µA 0 0 20 10 COLLECTOR-EMITTER VOLTAGE : VCE(V) 10 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : Ic (mA) 1.6 1.8 Ta=25°C IC / IB=10 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : Ic (mA) CURRENT GAIN BANDWIDTH PRODUCT (MHz) Fig.4 Base-emitter saturation voltage vs. collector current 5000 Fig.2 DC current gain vs. collector current BASE EMITTER VOLTAGE : VBE(ON) (V) BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V) Fig.1 Typical output characteristics 1.8 Ta=25°C VCE=10V 1.6 Ta=25°C IC / IB=10 0.3 0.2 0.1 0 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : Ic (mA) Fig.3 Collector-emitter saturation voltage vs. collector current 10 Ta=25°C VCE=10V Ta=25°C f=1MHz 5 1.4 1.2 1.0 0.8 0.6 CAPACITANCE (pF) 20 COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat) (V) zElectrical characteristic curves 2 Cob 1 Cib 0.5 0.4 0.2 0 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : Ic (mA) Fig.5 Base-emitter 'ON' voltage vs. collector current 0.2 0.1 0.1 0.2 0.5 1 2 5 10 20 50 100 REVERSE BIAS VOLTAGE : V (V) Fig.6 Capacitance vs. reverse bias voltage Ta=25°C VCE=5V 2000 1000 500 200 100 50 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : Ic (mA) Fig.7 Current gain bandwidth product vs. collector current 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1