MMBT3906L Taiwan Semiconductor Small Signal Product 350mW, PNP Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) SOT-23 MECHANICAL DATA - Case: SOT- 23, molded plastic - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260oC/10s - Weight: 8 mg (approximately) - Marking Code: 3E. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL VALUE UNIT PD 350 mW Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V IC -200 Power Dissipation Collector Current Thermal Resistance Junction-Ambient Junction and Storage Temperature Range RθJA 357 TJ , TSTG -55 to + 150 mA o C/W o C Notes:1. Valid provided that electrodes are kept at ambient temperature PARAMETER SYMBOL MIN MAX UNIT Collector-Base Breakdown Voltage IC = 10 μA IE = 0 V(BR)CBO -40 - V Collector-Emitter Breakdown Voltage IC = -1 mA IB = 0 V(BR)CEO -40 - V Emitter-Base Breakdown Voltage IE = -10 μA IC = 0 V(BR)EBO -5 - V Collector Base Cut-off Current VCB = -40 V ICBO - -100 nA Emitter Base Cut-off Current VEB = -6 V IEBO - -50 nA DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE = -1 V IC = -0.1 mA VCE = -1 V IC = -1 mA VCE = -1 V IC = -10 mA VCE = -1 V IC = -50 mA 60 VCE = -1 V IC = -100 mA 30 IC = -10 mA IB = -1 mA IC = -50 mA IB = -5 mA IC = -10 mA IB = -1 mA IC= -50 mA IB = -5 mA 60 80 hFE 100 300 - -0.25 - -0.4 -0.65 -0.85 - -0.95 fT 250 - MHz Cobo - 4.5 pF VCE(sat) VBE(sat) V V Gain-Bandwidth Product VCE = -20 V IC = -10 mA f= 100MHz Output Capacitance VCB = -5 V IE = 0 f= 1MHz Delay time VCC = -3 V VBE = -0.5 V IC = -10 mA td - 35 ns IB1 = -1.0 mA tr - 35 ns IC = -10 mA ts - 225 ns tf - 75 ns Rise time Storage time VCC = -3 V Fall time IB1 = IB2 = -1.0 mA Document Number: DS_S1502001 Version: A15 MMBT3906L Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) Fig. 1 Capacitance 10 Fig. 2 Charge Data 10000 VCC = 40 V ID/IB = 10 Cibo QT 1000 Q Charge (pC) Capacitance (pF) Cobo 100 QA 1 0.1 1 10 10 100 1 10 Reverse Bias (V) 100 1000 IC - Collector Current (mA) Fig. 3 Turn - On Time Fig. 4 Fall Time 1000 1000 IC/IB = 10 VCC = 40 V IB1 = IB2 Time (ns) tf - Fall Time (ns) 1r @ VCC = 3.0 V 100 15 V 40 V 10 2.0 V 100 IC/IB = 20 10 IC/IB = 10 1d @ VOB = 0 V 1 1 10 100 1 1000 1 10 IC - Collector Current (mA) 100 1000 IC - Collector Current (mA) Fig. 6 Noise Figure vs. Source Resistance Fig. 5 Noise Figure vs. Frequency 12 f = 1.0 kHz 5 NF, Noise Figure (dB) 4 NF - Noise Figure (dB) 10 Source Resistance = 200 Ω IC = 1.0 mA Source Resistance = 2.0 KΩ IC = 0.5 mA 3 Source Resistance = 2.0 KΩ IC = 50μA 2 IC = 1.0 mA IC = 0.5 mA 8 6 4 IC = 50 μA IC = 100 μA 2 1 Source Resistance = 2.0 KΩ IC = 100 μA 0 0.1 0 0.1 1 10 100 1 10 100 Rg, Source Resistance (kOhms) f - Frequency (kHz) Document Number: DS_S1502001 Version: A15 MMBT3906L Taiwan Semiconductor Small Signal Product h Parameters ( VCE = -10 VDC , f = 1.0 kHz , TA = 25 oC ) Fig. 7 Current Gain Fig. 8 Output Admittance 100 hoe, Output Admittance (u mhos) hFE , DC Current Gain 1000 100 10 0.1 1 10 1 0.1 10 0.1 1 IC, Collector Current (mA) IC - Collector Current (mA) Fig. 9 Input Impedance Fig. 10 Voltage Feedback Ratio 100 10 hre , Voltage Feedback Ratio (x10-4) hie , Input Impedance (kΩ) 10 10 1 1 0.1 0.1 0.1 1 0.1 10 1 10 IC - Collector Current (mA) IC - Collector Current (mA) Fig. 12 Temperature Coefficients Fig. 11 "ON" Voltages 1 θy , Temperature( o C) 1 V, Voltage 0.8 VCE @ IC/IB = 10 0.6 0.4 0.2 0.5 0 -0.5 +25oC to +125oC -1 -1.5 -55oC to +25oC ΘVB for VBE9sat) -2 0 1 10 100 IC - Collector Current (mA) Document Number: DS_S1502001 1000 0 20 40 60 80 100 120 140 160 180 200 IC - Collector Current (mA) Version: A15 MMBT3906L Taiwan Semiconductor Small Signal Product ORDER INFORMATION (EXAMPLE) MMBT3906L RFG Green compound code Packing code Part no. PACKAGE OUTLINE DIMENSIONS SOT-23 DIM. Unit (mm) Unit (inch) Min Max Min Max A 2.70 3.10 0.106 0.122 B 1.10 1.50 0.043 0.059 C 0.30 0.51 0.012 0.020 D 1.78 2.04 0.070 0.080 E 2.10 2.64 0.083 0.104 F 0.89 1.30 0.035 0.051 G 0.55 REF 0.022 REF H 0.10 REF 0.004 REF Unit (mm) Unit (inch) TYP TYP Z 2.90 0.114 X 0.80 0.031 Y 0.90 0.035 C 2.00 0.079 E 1.35 0.053 SUGGEST PAD LAYOUT DIM Document Number: DS_S1502001 Version: A15 MMBT3906L Taiwan Semiconductor Small Signal Product Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_S1502001 Version: A15