TSM70N10 100V N-Channel Power MOSFET TO-252 (DPAK) TO-251 (IPAK) Key Parameter Performance Pin Definition: 1. Gate 2. Drain 3. Source Parameter Value Unit VDS 100 V RDS(on)(max) 13 mΩ Qg 145 nC TO-251S (IPAK SL) Ordering Information Block Diagram Part No. Package Packing TSM70N10CP ROG TSM70N10CH C5G TSM70N10CH X0G TO-252 TO-251 TO-251S 2.5kpcs / 13” Reel 75pcs / Tube 75pcs / Tube Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. N-Channel MOSFET Absolute Maximum Ratings (TA=25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V TC=25°C Continuous Drain Current (Note 3) TC=70°C TA=25°C 70 61 ID TA=70°C Drain Current-Pulsed (Note 1) 12 A 9 IDM 150 A Avalanche Current, L=0.5mH IAS, IAR 25 A Avalanche Energy, L=0.5mH EAS, EAR 156 mJ TC=25°C Maximum Power Dissipation (Note 2) TC=70°C TA=25°C 120 PD TA=70°C Storage Temperature Range Operating Junction Temperature Range 1/8 80 8.3 W 5.3 TSTG -55 to +150 °C TJ -55 to +150 °C Version: D14 TSM70N10 100V N-Channel Power MOSFET Thermal Performance Parameter Symbol Thermal Resistance - Junction to Case Limit RӨJC Thermal Resistance - Junction to Ambient RӨJA Unit 1 o 40 o C/W C/W Electrical Specifications (TJ=25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 100 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 30A RDS(ON) -- 10 13 mΩ Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2 3 4 V Zero Gate Voltage Drain Current VDS = 80V, VGS = 0V IDSS -- -- 1 µA Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA Qg -- 145 -- Qgs -- 25 -- Qgd -- 43 -- Ciss -- 4300 -- Coss -- 300 -- Crss -- 120 -- td(on) -- 27 -- tr -- 13 -- td(off) -- 15 -- tf -- 42 -- VSD -- 0.8 1.3 V trr -- 165 -- ns Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 50V, ID = 30A, VGS = 10V Input Capacitance Output Capacitance VDS = 30V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance nC pF Switching Turn-On Delay Time Turn-On Rise Time VGS = 10V, VDS = 50V, Turn-Off Delay Time RG = 3Ω Turn-Off Fall Time ns Drain-Source Diode Characteristics and Maximum Rating Drain-Source Diode Forward Voltage VGS=0V, IS=30A Reverse Recovery Time IS = 30A, TJ=25 C o dI/dt = 100A/µs Reverse Recovery Charge Qrr -175 -nC Notes: 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 2. RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air 3. The maximum current is limited by package. 2/8 Version: D14 TSM70N10 100V N-Channel Power MOSFET Electrical Characteristics Curves Output Characteristics Transfer Characteristics On-Resistance vs. Gate-Source Voltage Gate Charge On-Resistance vs. Junction Temperature Capacitance 3/8 Version: D14 TSM70N10 100V N-Channel Power MOSFET Electrical Characteristics Curves Maximum Safe Operating Area Threshold Voltage vs. Temperature IDS=250µA Normalized Thermal Transient Impedance, Junction-to-Ambient 4/8 Version: D14 TSM70N10 100V N-Channel Power MOSFET TO-252 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 5/8 Version: D14 TSM70N10 100V N-Channel Power MOSFET TO-251 (IPAK) Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 6/8 Version: D14 TSM70N10 100V N-Channel Power MOSFET TO-251S (IPAK SL) Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 7/8 Version: D14 TSM70N10 100V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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