TSM2307

TSM2307
30V P-Channel MOSFET
SOT-23
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
Pin Definition:
1. Gate
2. Source
3. Drain
-30
Features
ID (A)
95 @ VGS = -10V
-3
140 @ VGS = -4.5V
-2
Block Diagram
●
Advance Trench Process Technology
●
High Density Cell Design for Ultra Low On-resistance
Application
●
Load Switch
●
PA Switch
Ordering Information
Part No.
Package
Packing
TSM2307CX RF
TSM2307CX RFG
SOT-23
SOT-23
3Kpcs / 7” Reel
3Kpcs / 7” Reel
P-Channel MOSFET
Note: “G” denotes Halogen Free Product.
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±20
V
ID
-3
A
IDM
-20
A
IS
-1.7
A
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a,b
o
Maximum Power Dissipation
Ta = 25 C
PD
o
Ta = 75 C
Operating Junction Temperature
Operating Junction and Storage Temperature Range
1.25
W
0.8
TJ
+150
o
TJ, TSTG
- 55 to +150
o
Symbol
Limit
C
C
Thermal Performance
Parameter
Junction to Case Thermal Resistance
RӨJF
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
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RӨJA
Unit
75
o
130
o
C/W
C/W
Version: B11
TSM2307
30V P-Channel MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = -250uA
BVDSS
-30
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = -250µA
VGS(TH)
-1
--
-3
V
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
VDS = -30V, VGS = 0V
IDSS
--
--
-1.0
µA
VDS ≤-5V, VGS = -10V
ID(ON)
-6
--
--
A
--
76
95
--
103
140
Zero Gate Voltage Drain Current
a
On-State Drain Current
a
Drain-Source On-State Resistance
Forward Transconductance
a
Diode Forward Voltage
b
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
VGS = -10V, ID = -3.0A
VGS = -4.5V, ID = -2.0A
RDS(ON)
mΩ
VDS = -15V, ID = -3A
gfs
--
5
--
S
IS = -1.7A, VGS = 0V
VSD
--
--
-1.2
V
Qg
--
10
15
Qgs
--
1.9
--
Qgd
--
2
--
Ciss
--
565
--
Coss
--
126
--
Crss
--
75
--
td(on)
--
10
20
tr
--
9
20
td(off)
--
27
50
--
7
16
VDS = -15V, ID = -3A,
VGS = -10V
VDS = -15V, VGS = 0V,
f = 1.0MHz
nC
pF
c
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
VDD = -15V, RL = 15Ω,
ID = -1A, VGEN = -10V,
RG = 6Ω
Turn-Off Fall Time
tf
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
2/6
nS
Version: B11
TSM2307
30V P-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/6
Version: B11
TSM2307
30V P-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/6
Version: B11
TSM2307
30V P-Channel MOSFET
SOT-23 Mechanical Drawing
DIM
A
A1
B
C
D
E
F
G
H
I
J
SOT-23 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX.
0.95 BSC
0.037 BSC
1.9 BSC
0.074 BSC
2.60
3.00
0.102
0.118
1.40
1.70
0.055
0.067
2.80
3.10
0.110
0.122
1.00
1.30
0.039
0.051
0.00
0.10
0.000
0.004
0.35
0.50
0.014
0.020
0.10
0.20
0.004
0.008
0.30
0.60
0.012
0.024
5º
10º
5º
10º
Marking Diagram
07 = Device Code
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L = Lot Code
5/6
Version: B11
TSM2307
30V P-Channel MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
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The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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6/6
Version: B11