TSM500P02D Taiwan Semiconductor P-Channel Power MOSFET -20V, -4.7A, 50mΩ KEY PERFORMANCE PARAMETERS FEATURES ● Halogen-free ● Suited for 1.8V drive applications ● Low profile package PARAMETER VALUE UNIT VDS -20 V RDS(on) (max) APPLICATION ● Battery Pack ● Load Switch VGS =- 4.5V 50 VGS = -2.5V 65 VGS = -1.8V 85 Qg mΩ 9.6 nC TDFN2x2 Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±10 V Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25°C TC = 100°C (Note 2) Total Power Dissipation @ TC = 25°C Operating Junction and Storage Temperature Range ID -4.7 A -2.82 IDM -18.8 A PDTOT 0.62 W TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT RӨJA 200 °C/W THERMAL PERFORMANCE PARAMETER Junction to Ambient Thermal Resistance Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances.RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air. Document Number: DS_P0000114 1 Version: B15 TSM500P02D Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Static CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 3) Drain-Source Breakdown Voltage VGS = 0V, ID = -250µA BVDSS -20 -- -- V Gate Threshold Voltage VDS = VGS, ID = -250µA VGS(TH) -0.3 -0.6 -0.8 V Gate Body Leakage VGS = ±10V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = -20V, VGS = 0V IDSS -- -- -1 µA -- 42 50 -- 57 65 -- 75 85 gfs -- 7 -- Qg -- 9.6 13 Qgs -- 1.6 2 Qgd -- 2 4 Ciss -- 850 1230 Coss -- 70 100 Crss -- 55 80 td(on) -- 6 11 tr -- 21.6 41 td(off) -- 51 97 tf -- 13.8 26 VGS = -4.5V, ID = -3A Drain-Source On-State Resistance VGS = -2.5V, ID = -2A RDS(ON) VGS = -1.8V, ID = -1A Forward Transconductance Dynamic VDS = -10V, ID = -3A mΩ S (Note 4) Total Gate Charge VDS = -10V, ID = -3.0A, Gate-Source Charge VGS = -4.5V Gate-Drain Charge Input Capacitance VDS = -10V, VGS = 0V, Output Capacitance Reverse Transfer Capacitance Switching f = 1.0MHz nC pF (Note 5) Turn-On Delay Time VDD = -10V, Turn-On Rise Time RGEN = 25Ω, Turn-Off Delay Time ID = -1A, VGS = -4.5V, Turn-Off Fall Time Source-Drain Diode ns (Note 3) Continuous Source Current IS -- -- -4.7 A Pulsed Source Current VG = VD = 0V, Force Current ISM -- -- -18.8 A Forward On Voltage IS = -1.0A, VGS = 0V VSD -- -- -1.0 V Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 4. For DESIGN AID ONLY, not subject to production testing. 5. Switching time is essentially independent of operating temperature. Document Number: DS_P0000114 2 Version: B15 TSM500P02D Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKAGE PACKING TSM500P02DCQ RFG TDFN 2x2 3,000pcs / 7” Reel Note: 1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC 2. Halogen-free according to IEC 61249-2-21 definition Document Number: DS_P0000114 3 Version: B15 TSM500P02D Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Continuous Drain Current vs. Tc Normalized On Resistance ID, Continuous Drain Current (A) Normalized RDSON vs. TJ TJ, Junction Temperature (℃) Normalized Vth vs. TJ Gate Charge Waveform VGS, Gate to Source Voltage (V) Normalized Gate Threshold Voltage TC, Case Temperature (℃) Qg, Gate Charge (nC) TJ, Junction Temperature (℃) Maximum Safe Operation Area Normalized Thermal Response ID, Continuous Drain Current (A) Normalized Transient Impedance Square Wave Pulse Duration (s) Document Number: DS_P0000114 VDS, Drain to Source Voltage (V) 4 Version: B15 TSM500P02D Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) TDFN2x2 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z) Document Number: DS_P0000114 5 Version: B15 TSM500P02D Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_P0000114 6 Version: B15