TSM080N03E Taiwan Semiconductor N-Channel Power MOSFET 30V, 55A, 8mΩ FEATURES ● Fast switching ● 100% EAS Guaranteed ● Green Device Available ● G-S ESD Protection Diode Embedded KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 30 V RDS(on) (max) APPLICATION ● Vcore / MB ● POL Application ● SMPS 2nd SR VGS = 10V 8 VGS = 4.5V 12.5 mΩ Qg 7.5 nC PDFN56 Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current Pulsed Drain Current TC = 25°C (Note 1) ID TC = 100°C (Note 2) Total Power Dissipation @ TC = 25°C 55 35 A IDM 220 A PDTOT 54 W Single Pulsed Avalanche Energy (Note 3) EAS 45 mJ Single Pulsed Avalanche Current (Note 3) IAS 30 A TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 2.3 °C/W Junction to Ambient Thermal Resistance RӨJA 62 °C/W Operating Junction and Storage Temperature Range THERMAL PERFORMANCE PARAMETER Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air. Document Number: DS_P0000014 1 Version: B15 TSM080N03E Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Static CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 4) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 30 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 1 1.6 2.5 V Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±10 µA Zero Gate Voltage Drain Current VDS = 30V, VGS = 0V IDSS -- -- 1 µA -- 6.5 8 mΩ 9.5 12.5 mΩ Drain-Source On-State Resistance Dynamic VGS = 10V, ID = 16A VGS = 4.5V, ID = 8A RDS(on) (Note 5) Total Gate Charge VDS = 15V, ID = 20A, Gate-Source Charge VGS = 4.5V Gate-Drain Charge Input Capacitance VDS = 25V, VGS = 0V, Output Capacitance Reverse Transfer Capacitance Gate Resistance Switching f = 1.0MHz Qg -- 7.5 -- Qgs -- 1.3 -- Qgd -- 4.5 -- Ciss -- 750 -- Coss -- 150 -- pF Ω Crss F = 1MHz, open drain nC 110 Rg -- 2.7 -- td(on) -- 4.8 -- tr -- 12.5 -- td(off) -- 27.6 -- tf -- 8.2 -- VSD -- -- 1 (Note 6) Turn-On Delay Time VDD = 15V, Turn-On Rise Time RGEN = 3.3Ω, Turn-Off Delay Time ID = 15A, VGS = 10V, Turn-Off Fall Time Source-Drain Diode ns (Note 4) Forward On Voltage IS = 1A, VGS = 0V V Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L = 0.1mH, IAS = 30A, VDD = 25V, RG = 25Ω, Starting TJ = 25 C 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. o Document Number: DS_P0000014 2 Version: B15 TSM080N03E Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKAGE PACKING TSM080N03EPQ56 RLG PDFN56 2,500pcs / 13” Reel Note: 1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC 2. Halogen-free according to IEC 61249-2-21 definition Document Number: DS_P0000014 3 Version: B15 TSM080N03E Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Normalized RDSON vs. TJ Normalized On Resistance ID , Continuous Drain Current (A) Continuous Drain Current vs. Tc TC , Case Temperature (℃) TJ , Junction Temperature (℃) Gate Charge Waveform VGS , Gate to Source Voltage (V) Normalized Gate Threshold Voltage (V) Normalized Vth vs. TJ Qg , Gate Charge (nC) Normalized Transient Impedance Maximum Safe Operation Area ID, Continuous Drain Current (A) Normalized Thermal Response TJ , Junction Temperature (℃) VDS , Drain to Source Voltage (V) Square Wave Pulse Duration (s) Document Number: DS_P0000014 4 Version: B15 TSM080N03E Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) PDFN56 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z) Document Number: DS_P0000014 5 Version: B15 TSM080N03E Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_P0000014 6 Version: B15