TSM10N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 800 V RDS(on) (max) 1.05 Ω Qg 53 nC Features Block Diagram ● Low RDS(ON) 1.05Ω (Max.) ● Low gate charge typical @ 53nC (Typ.) ● Improve dv/dt capability Ordering Information Part No. Package Packing TO-220 50pcs / Tube TSM10N80CZ C0G TSM10N80CI C0G ITO-220 50pcs / Tube Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds N-Channel MOSFET Absolute Maximum Ratings (TA=25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 800 V Gate-Source Voltage VGS ±30 V ID 9.5 A IDM 38 A EAS 267 mJ dv/dt 4.5 V IAR 9.5 A EAR 29 mJ TJ 150 ºC TSTG -55 to +150 Symbol Limit Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulse Avalanche Energy Peak Diode Recovery dv/dt (Note 2) (Note 3) Avalanche Current (Repetitive) Repetitive Avalanche Energy (Note 4) (Note 4) Operating Junction Temperature Storage Temperature Range o C Thermal Performance Parameter Thermal Resistance - Junction to Case TO-220 RӨJC ITO-220 Thermal Resistance - Junction to Ambient TO-220 / ITO-220 Notes: Surface mounted on FR4 board t ≤ 10sec 1/8 RӨJA Unit 0.43 2.6 o C/W 62.5 Version: C14 TSM10N80 800V N-Channel Power MOSFET Electrical Specifications (TJ=25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 800 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 4.75A RDS(ON) -- 0.9 1.05 Ω Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2.0 -- 4.0 V Zero Gate Voltage Drain Current VDS = 800V, VGS = 0V IDSS -- -- 10 µA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Forward Transconductance VDS = 30V, ID = 4.75A gfs -- 6.3 -- S Diode Forward Voltage IS = 9.5A, VGS = 0V VSD -- -- 1.5 V Qg -- 53 -- Qgs -- 10 -- Qgd -- 23 -- Ciss -- 2336 -- Coss -- 214 -- Crss -- 29 -- td(on) -- 63 -- Dynamic (Note 6) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 640V, ID = 9.5A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz nC pF (Note 7) Turn-On Delay Time Turn-On Rise Time VGS = 10V, ID = 9.5A, tr -- 62 -- Turn-Off Delay Time VDD = 400V, RG = 25Ω td(off) -- 256 -- tf -- 72 -- tfr -- 450 -- ns -- 5.3 -- µC Turn-Off Fall Time Reverse Recovery Time VGS = 0V, IS = 9.5A, dIF/dt = 100A/us Reverse Recovery Charge Qfr Notes: 1. Limited by maximum junction temperature 2. VDD = 50V, IAS=10A, L=5mH, RG=25Ω 3. ISD ≤9.5A, di/dt ≤ 200A/µs, VDD ≤ BV 4. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 5. Pulse test: pulse width ≤300µs, duty cycle ≤2% 6. For design reference only, not subject to production testing. 7. Switching time is essentially independent of operating temperature. 2/8 ns Version: C14 TSM10N80 800V N-Channel Power MOSFET Electrical Characteristics Curves Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/8 Version: C14 TSM10N80 800V N-Channel Power MOSFET Electrical Characteristics Curves Drain Current vs. Case Temperature BVDSS vs. Junction Temperature Maximum Safe Operating Area Capacitance vs. Drain-Source Voltage Maximum Safe Operating Area (ITO-220) 4/8 Version: C14 TSM10N80 800V N-Channel Power MOSFET Electrical Characteristics Curves Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Thermal Transient Impedance, Junction-to-Ambient(ITO-220) 5/8 Version: C14 TSM10N80 800V N-Channel Power MOSFET TO-220 Mechanical Drawing Unit: Millimeters Marking Diagram G Y WW F = Halogen Free = Year Code = Week Code (01~52) = Factory Code 6/8 Version: C14 TSM10N80 800V N-Channel Power MOSFET ITO-220 Mechanical Drawing Unit: Millimeters Marking Diagram G Y WW F = Halogen Free = Year Code = Week Code (01~52) = Factory Code 7/8 Version: C14 TSM10N80 800V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 8/8 Version: C14