TSM4NB65 650V N-Channel Power MOSFET TO-220 ITO-220 TO-251 (IPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 650 V RDS(on) (max) 3.37 Ω Qg 13.46 nC TO-252 (DPAK) Application ● ● Block Diagram Power Supply. Lighting Ordering Information Part No. Package Packing TSM4NB65CZ C0 TO-220 50pcs / Tube TSM4NB65CZ C0G TO-220 50pcs / Tube TSM4NB65CI C0 ITO-220 50pcs / Tube TSM4NB65CI C0G ITO-220 50pcs / Tube TSM4NB65CH C5G TO-251 75pcs / Tube N-Channel MOSFET TSM4NB65CP ROG TO-252 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Absolute Maximum Ratings (TC = 25℃ unless otherwise noted) Parameter Symbol Limit IPAK/DPAK ITO-220 TO-220 Unit Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±30 V 4 A 2.4 A IDM 16 A EAS 31.2 mJ Continuous Drain Current Pulsed Drain Current Tc = 25℃ (Note 1) Tc = 100℃ (Note 2) Single Pulse Avalanche Energy (Note 3) Total Power Dissipation @ TC = 25℃ Operating Junction Temperature Storage Temperature Range ID PTOT 50 25 70 W TJ -55 to +150 ℃ TSTG -55 to +150 ℃ 1/10 Version: C14 TSM4NB65 650V N-Channel Power MOSFET Thermal Performance Parameter Symbol Limit IPAK/DPAK ITO-220 TO-220 Unit Thermal Resistance - Junction to Case RӨJC 2.5 5 1.78 ℃/W Thermal Resistance - Junction to Ambient RӨJA 83 62.5 62.5 ℃/W Electrical Specifications (TA=25℃ unless otherwise noted) Parameter Static Conditions Symbol Min Typ Max Unit (Note 4) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 650 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 2A RDS(ON) -- 2.7 3.37 Ω Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2.5 3.6 4.5 V Zero Gate Voltage Drain Current VDS = 650V, VGS = 0V IDSS -- -- 1 µA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Forward Transfer Conductance VDS = 40V, ID = 2A gfs -- 2.6 -- S Qg -- 13.46 -- Qgs -- 2.98 -- Qgd -- 6.66 -- Ciss -- 549 -- Coss -- 75 -- Crss -- 18 -- td(on) -- 11 -- tr -- 20 -- td(off) -- 30 -- tf -- 19 -- Dynamic (Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480V, ID = 4A, VGS = 10V Input Capacitance Output Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance nC pF Switching (Note 6) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VGS = 10V, ID = 4A, VDD = 300V, RG = 25Ω Turn-Off Fall Time Source-Drain Diode Ratings and Characteristic ns (Note 4) Source Current Integral reverse diode in IS -- -- 4 A Source Current (Pulse) the MOSFET ISM -- -- 16 A Diode Forward Voltage IS = 4A, VGS = 0V VSD -- -- 1.13 V Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L = 10mH, IAS = 2.4A, VDD = 50V, RG = 25Ω, Starting TJ = 25℃ 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. 2/10 Version: C14 TSM4NB65 650V N-Channel Power MOSFET Electrical Characteristics Curves Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate-Source Voltage vs. Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Current vs. Voltage 3/10 Version: C14 TSM4NB65 650V N-Channel Power MOSFET Electrical Characteristics Curves BVDSS vs. Junction Temperature Capacitance vs. Drain-Source Voltage Maximum Safe Operating Area (TO-220) Maximum Safe Operating Area (ITO-220) Maximum Safe Operating Area (DPAK/IPAK) 4/10 Version: C14 TSM4NB65 650V N-Channel Power MOSFET Electrical Characteristics Curves Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Case (TO-220) 10 1 10 0 10 -1 10 -2 10 -3 10 -4 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single pulse 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Case (ITO-220) 10 1 10 0 10 -1 10 -2 10 -3 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single pulse -4 10 -6 10 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Case (DPAK/IPAK) 10 1 10 0 10 -1 10 -2 10 -3 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single pulse -4 10 -6 10 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (s) 5/10 Version: C14 TSM4NB65 650V N-Channel Power MOSFET TO-220 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) = Lot Code 6/10 Version: C14 TSM4NB65 650V N-Channel Power MOSFET ITO-220 Mechanical Drawing Unit: Millimeters Marking Diagram G Y WW F = Halogen Free = Year Code = Week Code (01~52) = Factory Code 7/10 Version: C14 TSM4NB65 650V N-Channel Power MOSFET TO-252 (DPAK) Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 8/10 Version: C14 TSM4NB65 650V N-Channel Power MOSFET TO-251 (IPAK) Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 9/10 Version: C14 TSM4NB65 650V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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