TSM340N06 60V N-Channel Power MOSFET TO-251S (IPAK) IO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 60 V RDS(on) (max) VGS = 10V 34 VGS = 4.5V 40 Qg Ordering Information Part No. TSM340N06CH C5G mΩ 16.6 nC Block Diagram Package Packing TO-251S 75pcs / Tube TSM340N06CP ROG TO-252 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds N-Channel MOSFET Absolute Maximum Ratings (TC=25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V 30 A 19 A TC=25ºC Continuous Drain Current ID TC=100ºC (Note 1) IDM 120 A Single Pulse Avalanche Energy (Note 2) EAS 24 mJ Single Pulse Avalanche Current (Note 2) IAS 22 A 40 W 0.32 W/ºC TJ 150 ºC TSTG -55 to +150 Symbol Limit RӨJC 3.1 o 62 o Pulsed Drain Current o Total Power Dissipation @ TC=25 C o Derate above TC=25 C Operating Junction Temperature Storage Temperature Range PD o C Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient RӨJA 1/7 Unit C/W C/W Version: B14 TSM340N06 60V N-Channel Power MOSFET Electrical Specifications (TC=25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit BVDSS 60 -- -- V -- 28 34 -- 33 40 1.2 1.7 2.5 -- -- 1 -- -- 10 IGSS -- -- ±100 nA gfs -- 8 -- S Qg -- 16.6 -- Qgs -- 2.2 -- Qgd -- 3.9 -- Ciss -- 1180 -- Coss -- 68 -- Crss -- 45 -- Rg -- 2.1 -- td(on) -- 4.6 -- tr -- 14.8 -- td(off) -- 27.2 -- tf -- 7.8 -- IS -- -- 25 A ISM -- -- 100 A VGS = 0V, IS = 1A VSD -- -- 1 V VGS = 0V, IS = 1A dIF/dt = 100A/µs trr -- 17 -- ns Qrr -- 12 -- nC Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA VGS = 10V, ID = 15A Drain-Source On-State Resistance Gate Threshold Voltage VGS = 4.5V, ID = 10A VDS = VGS, ID = 250µA Zero Gate Voltage Drain Current VDS = 60V, VGS = 0V VDS = 48V, TJ = 125ºC Gate Body Leakage VGS = ±20V, VDS = 0V Forward Transconductance VDS = 10V, ID = 8A RDS(ON) VGS(TH) IDSS mΩ V µA Dynamic Total Gate Charge(Note 3,4) (Note 3,4) Gate-Source Charge (Note 3,4) Gate-Drain Charge VDS = 30V, ID = 20A, VGS = 10V Input Capacitance VDS = 30V, VGS = 0V, f = 1MHz Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS=0V, VDS=0V, f=1MHz nC pF Ω Switching Turn-On Delay Time(Note 3,4) (Note 3,4) Turn-On Rise Time (Note 3,4) Turn-Off Delay Time VDD=30V , VGS=10V , RG=6, ID=-1A Turn-Off Fall Time(Note 3,4) ns Source-Drain Diode Ratings and Characteristic Continuous Drain-Source Diode VG=VD=0V , Force Current Pulse Drain-Source Diode Diode-Source Forward Voltage (Note 3) Reverse Recovery Time (Note 3) Reverse Recovery Charge Note: 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=22A.,RG=25,Starting TJ=25oC 3. The data tested by pulsed , pulse width ≤300µs, duty cycle ≤2% 4. Essentially independent of operating temperature. 2/7 Version: B14 TSM340N06 60V N-Channel Power MOSFET Electrical Characteristics Curve Normalized RDSON vs. TJ Normalized On Resistance ID , Continuous Drain Current (A) Continuous Drain Current vs. Tc TJ , Junction Temperature (oC) TC , Case Temperature (oC) Gate Charge Waveform VGS , Gate to Source Voltage (V) Normalized Gate Threshold Voltage (V) Normalized Vth vs. TJ o Qg , Gate Charge (nC) Normalized Transient Impedance (TO-251S) Maximum Safe Operation Area (TO-251S) Normalized Thermal Response ID , Continuous Drain Current (A) TJ , Junction Temperature ( C) VDS , Drain to Source Voltage (V) Square Wave Pulse Duration (s) 3/7 Version: B14 TSM340N06 60V N-Channel Power MOSFET Electrical Characteristics Curve Maximum Safe Operation Area (TO-252) Normalized Thermal Response ID , Continuous Drain Current (A) Normalized Transient Impedance (TO-252) VDS , Drain to Source Voltage (V) Square Wave Pulse Duration (s) 4/7 Version: B14 TSM340N06 60V N-Channel Power MOSFET TO-251S Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 5/7 Version: B14 TSM340N06 60V N-Channel Power MOSFET TO-252 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 6/7 Version: B14 TSM340N06 60V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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