TSM80N1R2 Taiwan Semiconductor N-Channel Power MOSFET 800V, 5.5A, 1.2Ω FEATURES KEY PERFORMANCE PARAMETERS ● ● ● ● ● ● Super-Junction technology High performance due to small figure-of-merit High ruggedness performance High commutation performance Pb-free plating Compliant to RoHS Directive 2011/65/EU and in accordance to WEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 definition PARAMETER VALUE UNIT VDS 800 V RDS(on) (max) 1.2 Ω Qg 19.4 nC APPLICATION ● Power Supply ● Lighting TO-251 (IPAK) TO-252 (DPAK) Notes: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 800 V Gate-Source Voltage VGS ±30 V 5.5 A 3.4 A IDM 16.5 A Continuous Drain Current Pulsed Drain Current TC = 25°C (Note 1) ID TC = 100°C (Note 2) Total Power Dissipation @ TC = 25°C PDTOT 110 W Single Pulsed Avalanche Energy (Note 3) EAS 121 mJ Single Pulsed Avalanche Current (Note 3) IAS 2.2 A TJ, TSTG - 55 to +150 °C Operating Junction and Storage Temperature Range Document Number:DS_P0000176 1 Version: A15 TSM80N1R2 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 1.14 °C/W Junction to Ambient Thermal Resistance RӨJA 62 °C/W Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB with minimum recommended footprint in still air. ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Static CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 4) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 800 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2 -- 4 V Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 800V, VGS = 0V IDSS -- -- 1 µA Drain-Source On-State Resistance VGS = 10V, ID = 2.75A RDS(on) -- 0.9 1.2 Ω Qg -- 19.4 -- Qgs -- 3.4 -- Qgd -- 9.6 -- Dynamic (Note 5) Total Gate Charge VDS = 380V, ID = 5.5A, VGS = 10V Gate-Source Charge Gate-Drain Charge Input Capacitance nC Ciss -- 685 -- Output Capacitance VDS = 100V, VGS = 0V, f = 1.0MHz Coss -- 62 -- Gate Resistance F = 1MHz, open drain Rg -- 3.4 -- td(on) -- 22 -- tr -- 11 -- td(off) -- 55 -- tf -- 10 -- VSD -- -- 1.4 V trr -- 240 -- ns Qrr -- 2.5 -- μC Switching pF Ω (Note 6) Turn-On Delay Time VDD = 380V, RGEN = 25Ω, ID = 5.5A, VGS = 10V, Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Source-Drain Diode ns (Note 4) Forward On Voltage IS = 5.5A, VGS = 0V Reverse Recovery Time VR = 100V, IS = 5.5A dIF/dt = 100A/μs Reverse Recovery Charge Notes: 1. Current limited by package. 2. Pulse width limited by the maximum junction temperature. 3. L = 50mH, IAS = 2.2A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%. 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. o Document Number:DS_P0000176 2 Version: A15 TSM80N1R2 Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKAGE PACKING TSM80N1R2CH C5G TO-251 (IPAK) 75pcs / Tube TSM80N1R2CP ROG TO-252 (DPAK) 2,500pcs / 13” Reel Document Number:DS_P0000176 3 Version: A15 TSM80N1R2 Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Transfer Characteristics ID, Continuous Drain Current (A) ID, Continuous Drain Current (A) Output Characteristics VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) Gate-Source Voltage vs. Gate Charge VGS, Gate to Source Voltage (V) RDS(on), Drain-Source On-Resistance (Normalized) On-Resistance vs. Drain Current ID, Continuous Drain Current (A) Qg, Gate Charge (nC) Source-Drain Diode Forward Current vs. Voltage IS, Body Diode Forward Current (A) RDS(on), Drain-Source On-Resistance (Normalized) On-Resistance vs. Junction Temperature VSD, Body Diode Forward Voltage (V) TJ, Junction Temperature (°C) Document Number:DS_P0000176 4 Version: A15 TSM80N1R2 Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) BVDSS vs. Junction Temperature C, Capacitance (pF) BVDSS (Normalized) Drain-Source Breakdown Voltage (V) Capacitance vs. Drain-Source Voltage VDS, Drain to Source Voltage (V) us Drain Current (A) TJ, Junction Temperature (°C) ID, Continuous Drain Current (A) Maximum Safe Operating Area Normalized Effective Transient Thermal Impedance VDS, Drain to Source Voltage (V) Continuous Drain Current (A) Normalized Thermal Transient Impedance, Junction-to-Case 10 1 10 0 10 -1 10 10 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single pulse -2 -3 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (s) Document Number:DS_P0000176 5 Version: A15 TSM80N1R2 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) TO-251 (IPAK) MARKING DIAGRAM Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z) Document Number:DS_P0000176 6 Version: A15 TSM80N1R2 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) TO-252 (DPAK) SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z) Document Number:DS_P0000176 7 Version: A15 TSM80N1R2 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number:DS_P0000176 8 Version: A15